Identification of the misfit dislocations at an FeAl/AlAs/GaAs interface using moiré fringe contrast in a transmission electron microscope

1991 ◽  
Vol 59 (1) ◽  
pp. 63-65 ◽  
Author(s):  
J. E. Angelo ◽  
J. N. Kuznia ◽  
A. M. Wowchak ◽  
P. I. Cohen ◽  
W. W. Gerberich
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Misfit Dislocations ◽  
Fringe Contrast ◽  
Transmission Electron ◽  
Moire Fringe ◽  
Moiré Fringe

A Study of FeAl/AlAs/GaAs Interfaces Using Moiré-Fringe Contrast in a Transmission Electron Microscope

1990 ◽  
Vol 202 ◽  
Author(s):  
J. E. Angelo ◽  
J.N. Kuznia ◽  
A.M. Wowchak ◽  
P. I. Cohen ◽  
W. W. Gerberich
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Growth Temperature ◽  
Growth Mode ◽  
Misfit Dislocations ◽  
Layer By Layer ◽  
Plan View ◽  
Transmission Electron ◽  
Moire Fringe ◽  
Moiré Fringe

ABSTRACTThis paper describes the transmission electron microscope (TEM) investigations of the defect structure present at various FeAl/AlAs/GaAs interfaces. Although a systematic study has not yet been completed it is shown that by changing the growth temperature from 200°C to 300°C the growth morphology changes significantly. In-situ RHEED studies show the growth mode changes from layer-by-layer to island-like when the growth temperature is increased. TEM in both plan-view and cross-sectional modes is used to confirm these results. It is found that by increasing the growth temperature from 200°C to 300°C the growth mode switches from layer-by-layer (2D) with a continuous FeAl film, to island-like (3D) with significant numbers of “pin-holes”. A Moiré-fringe analysis is applied to determine the Burgers vector of the misfit dislocations. In both cases the interface between the FeAl and AlAs consists of a grid of misfit dislocations with [100] and [010] line directions whose Burgers vectors are [010] and [100] respectively.

Cathodoluminescence from Inx Ga1−x as Layers Grown on GaAs Using a Transmission Electron Microscope

1999 ◽  
Vol 588 ◽  
Author(s):  
N. Yamamoto ◽  
T. Mita ◽  
S. Heun ◽  
A. Franciosi ◽  
J.-M. Bonard
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Strong Line ◽  
Wavelength Shift ◽  
Misfit Dislocations ◽  
Ion Milling ◽  
Thin Sample ◽  
Dark Line ◽  
Linear Features ◽  
Transmission Electron

AbstractInxGa1−xAs epilayers grown on GaAs(100) were studied by cathodoluminescence (CL) spectroscopy and imaging technique with 0.8 nm spectral resolution, using a transmission electron microscope. Linear features appear in the monochromatic CL image taken by the emission from the InxGa1−x.As layers, and do not appear in those from the GaAs layers. There is no direct correlation between the dark-line contrast in the panchromatic CL image (due to misfit dislocations) and the strong line contrast in the monochromatic CL images of the InxGa1−xAs layers. A peak wavelength shift in the CL spectrum was observed as the electron probe was moved across the linear features. The linear features also appear in a thin sample where the misfit dislocations are removed by ion milling, which clearly reveals that the strong line contrast is not directly due to the misfit dislocation. From those results the linear features in the monochromatic CL image are considered to be due to compositional fluctuations of the In concentration in the InxGa1−xAs layer.

Identification of the misfit dislocations at YBa2Cu3O7−δ/SrTiO3 interface using moiré fringe contrast

2006 ◽  
Vol 444 (1-2) ◽  
pp. 1-4 ◽  
Author(s):  
H. Wang ◽  
S.R. Foltyn ◽  
P.N. Arendt ◽  
Q.X. Jia ◽  
X. Zhang
Keyword(s):  
Misfit Dislocations ◽  
Fringe Contrast ◽  
Moire Fringe ◽  
Moiré Fringe

A Reproducible Selective Stain for Cardiac Sarcoplasmic Reticulum

1974 ◽  
Vol 32 ◽  
pp. 214-215
Author(s):  
R. A. Waugh ◽  
J. R. Sommer
Keyword(s):  
Complex System ◽  
Electron Microscope ◽  
Sarcoplasmic Reticulum ◽  
Transmission Electron Microscope ◽  
Electron Microscopic ◽  
Cardiac Sarcoplasmic Reticulum ◽  
Transmission Electron

Cardiac sarcoplasmic reticulum (SR) is a complex system of intracellular tubules that, due to their small size and juxtaposition to such electron-dense structures as mitochondria and myofibrils, are often inconspicuous in conventionally prepared electron microscopic material. This study reports a method with which the SR is selectively “stained” which facilitates visualizationwith the transmission electron microscope.

Surface Structure of the Spores of Glugea Weissenbergi

1969 ◽  
Vol 27 ◽  
pp. 238-239
Author(s):  
Sanford H. Vernick ◽  
Anastasios Tousimis ◽  
Victor Sprague
Keyword(s):  
Electron Microscope ◽  
Surface Structure ◽  
Transmission Electron Microscope ◽  
Mature Spore ◽  
Spore Surface ◽  
Sectioned Material ◽  
Transmission Electron ◽  
Surface Detail

Recent electron microscope studies have greatly expanded our knowledge of the structure of the Microsporida, particularly of the developing and mature spore. Since these studies involved mainly sectioned material, they have revealed much internal detail of the spores but relatively little surface detail. This report concerns observations on the spore surface by means of the transmission electron microscope.

A New High Resolution Transmission Electron Microscope with Second-Zone Objective Lens

1969 ◽  
Vol 27 ◽  
pp. 176-177 ◽  
Author(s):  
H. Tochigi ◽  
H. Uchida ◽  
S. Shirai ◽  
K. Akashi ◽  
D. J. Evins ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Electron Microscope ◽  
Objective Lens ◽  
High Excitation ◽  
Transmission Electron ◽  
New Instrument

A New High Excitation Objective Lens (Second-Zone Objective Lens) was discussed at Twenty-Sixth Annual EMSA Meeting. A new commercially available Transmission Electron Microscope incorporating this new lens has been completed.Major advantages of the new instrument allow an extremely small beam to be produced on the specimen plane which minimizes specimen beam damages, reduces contamination and drift.

X-ray microanalysis of thin specimens in the transmission electron microscope at voltages up to 1000 Kv.

1978 ◽  
Vol 36 (1) ◽  
pp. 540-541
Author(s):  
G. Cliff ◽  
M.J. Nasir ◽  
G.W. Lorimer ◽  
N. Ridley
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Weight Fraction ◽  
Present Series ◽  
Constant Independent ◽  
X Ray ◽  
Transmission Electron ◽  
Series Of Experiments ◽  
Image Position ◽  
X Ray Absorption

In a specimen which is transmission thin to 100 kV electrons - a sample in which X-ray absorption is so insignificant that it can be neglected and where fluorescence effects can generally be ignored (1,2) - a ratio of characteristic X-ray intensities, I1/I2 can be converted into a weight fraction ratio, C1/C2, using the equationwhere k12 is, at a given voltage, a constant independent of composition or thickness, k12 values can be determined experimentally from thin standards (3) or calculated (4,6). Both experimental and calculated k12 values have been obtained for K(11<Z>19),kα(Z>19) and some Lα radiation (3,6) at 100 kV. The object of the present series of experiments was to experimentally determine k12 values at voltages between 200 and 1000 kV and to compare these with calculated values.The experiments were carried out on an AEI-EM7 HVEM fitted with an energy dispersive X-ray detector.

Aspects of microanalysis in a transmission electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 510-511
Author(s):  
R. Sinclair ◽  
B.E. Jacobson
Keyword(s):  
Grain Size ◽  
Electron Beam ◽  
Electron Microscope ◽  
Chemical Analysis ◽  
Transmission Electron Microscope ◽  
Vapor Deposition ◽  
Critical Currents ◽  
X Ray ◽  
Fine Grain ◽  
Transmission Electron

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).

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