Micro-Raman Study of Charge Carrier Distribution and Cathodoluminescence Microanalysis of Porous gap Membranes

1999 ◽  
Vol 588 ◽  
Author(s):  
I. M. Tiginyanu ◽  
M. A. Stevens Kalceff ◽  
A. Sarua ◽  
G. Irmer ◽  
J. Monecke ◽  
...  
Keyword(s):  
Longitudinal Optical ◽  
Sulphuric Acid Solution ◽  
Porous Membranes ◽  
Specific Information ◽  
Carrier Distribution ◽  
Free Standing ◽  
Raman Analysis ◽  
Porous Layers ◽  
Emission Efficiency ◽  
Raman Study

AbstractPorous layers and free-standing membranes were fabricated by anodic etching of n-GaP substrates in a sulphuric acid solution. Micro-Raman analysis of the interaction between the longitudinal optical phonons and plasmons in porous membranes allowed us to obtain specific information about the electro-optical properties of microstructured GaP. In particular, apart from the carrier exhausted areas surrounding the pores, the existence of conductive regions was demonstrated. A comparative analysis of the secondary electron and panchromatic cathodoluminescence (CL) images evidenced an increase in the emission efficiency caused by porosity. Data concerning the spectral distribution of CL in bulk and porous samples are presented.

Porosity-Induced Optical Phonon Engineering in III-V Compounds

1998 ◽  
Vol 536 ◽  
Author(s):  
I. M. Tiginyanu ◽  
G. Irmer ◽  
J. Monecke ◽  
H. L. Hartnagel ◽  
A. Vogt ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Phonon Frequency ◽  
Vibrational Mode ◽  
Longitudinal Optical ◽  
Electrochemical Anodization ◽  
Raman Analysis ◽  
Porous Layers ◽  
Surface Phonon ◽  
Promising Tool ◽  
Phonon Spectra

AbstractNew possibilities for modifying the phonon spectra of III-V compounds are evidenced by micro-Raman analysis of porous layers prepared by electrochemical anodization of (111 )Aoriented n-GaP substrates. In particular, a surface-related vibrational mode along with a porosity-induced decoupling between the longitudinal optical (LO) phonon and plasmon are observed. We prove that filling in the pores with other materials (aniline as a first approach) is a promising tool for controlling the surface phonon frequency.

Raman study of free-standing porous silicon

1996 ◽  
Vol 53 (4) ◽  
pp. 1937-1947 ◽  
Author(s):  
H. Tanino ◽  
A. Kuprin ◽  
H. Deai ◽  
N. Koshida
Keyword(s):  
Porous Silicon ◽  
Free Standing ◽  
Raman Study

ONE-PHONON-ASSISTED ELECTRON RESONANT RAMAN SCATTERING IN FREE-STANDING QUANTUM WIRES

2007 ◽  
Vol 21 (17) ◽  
pp. 2989-3000
Author(s):  
XIANG-FU ZHAO ◽  
CUI-HONG LIU
Keyword(s):  
Raman Scattering ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Longitudinal Optical ◽  
Phonon Modes ◽  
Free Standing ◽  
Surface Optical ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Valence Bands

The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process in a free-standing semiconductor quantum wire of cylindrical geometry associated with bulk longitudinal optical (LO) phonon modes or the surface optical (SO) phonon modes is calculated for T=0 K . The Fröhlich interaction is considered to illustrate the theory for a GaAs system. Electron states are confined within a free-standing quantum wire (FSW). Single parabolic conduction and valence bands are assumed. The selection rules are studied. Numerical results and a discussion are also presented for various radii of the cylindrical quantum wires.

The structural phase transition process of free-standing monoclinic vanadium dioxide micron-sized rods: temperature-dependent Raman study

RSC Advances ◽  
2015 ◽  
Vol 5 (101) ◽  
pp. 83139-83143 ◽  
Author(s):  
Huafang Zhang ◽  
Quanjun Li ◽  
Pengfei Shen ◽  
Qing Dong ◽  
Bo Liu ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Vanadium Dioxide ◽  
Structural Phase ◽  
Transition Process ◽  
Temperature Dependent ◽  
Free Standing ◽  
Lower Phase ◽  
Phase Transition Process ◽  
Raman Study

Micro-sized rods show a lower phase transition temperature than nano-sized rods, and this is interpreted on the basis of nucleating defects.

Raman study of the strain in GaN films by comparison with a free-standing GaN

2003 ◽  
Vol 0 (7) ◽  
pp. 2428-2431 ◽  
Author(s):  
T. Inoue ◽  
Y. Toda ◽  
K. Hoshino ◽  
T. Someya ◽  
Y. Arakawa
Keyword(s):  
Free Standing ◽  
Raman Study

Polymer−Silica Hybrid Monolayers as Precursors for Ultrathin Free-Standing Porous Membranes

Langmuir ◽  
2002 ◽  
Vol 18 (6) ◽  
pp. 2363-2367 ◽  
Author(s):  
Hui Xu ◽  
Werner A. Goedel
Keyword(s):  
Porous Membranes ◽  
Free Standing ◽  
Silica Hybrid

Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN

1999 ◽  
Vol 85 (7) ◽  
pp. 3535-3539 ◽  
Author(s):  
Leah Bergman ◽  
Mitra Dutta ◽  
Cengiz Balkas ◽  
Robert F. Davis ◽  
James A. Christman ◽  
...  
Keyword(s):  
Longitudinal Optical ◽  
Transverse Optical ◽  
Raman Analysis ◽  
Optical Modes

Converting Free-Standing Porous Silicon into Related Porous Membranes

2008 ◽  
Vol 120 (2) ◽  
pp. 371-373 ◽  
Author(s):  
Yajun Yang ◽  
Guowen Meng ◽  
Xianyun Liu ◽  
Lide Zhang
Keyword(s):  
Porous Silicon ◽  
Porous Membranes ◽  
Free Standing
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