scholarly journals Nature of Radiative Recombination Processes in Layered Heterogeneous PbCdI2 Thick Films: Promising Scintillator Materials

2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Anatolii P. Bukivskii ◽  
Yuriy P. Gnatenko ◽  
Yuri P. Piryatinski ◽  
Igor V. Fesych ◽  
Vasyl V. Lendel ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Thick Films ◽  
Chemical Deposition ◽  
Surface States ◽  
Industrial Applications ◽  
Pl Spectra ◽  
Complex Crystal Structure ◽  
Recombination Processes ◽  
Scintillator Detectors

For the first time, PbCdI2 alloys in the form of thick films were prepared on a glass substrate using the conventional one-step chemical deposition method. The studies of the structural properties of these films showed that they have a very complex crystal structure, where PbI2 microcrystallites of micron and submicron sizes, as well as small nanoclusters (NCLs), are randomly formed in the CdI2 crystal matrix. It was found that the films show intense photo- and cathodoluminescence at room temperature. The temperature dependence of PL spectra of thick PbCdI2 films was studied. The nature of various radiative recombination processes in PbCdI2 films was established and it was shown that their PL spectra at room temperature are equally determined both by surface states in small PbI2 NCLs and by intrinsic defects in microcrystallites. The obtained PbCdI2 thick films can be considered as novel promising semiconductor materials for the development of effective inexpensive scintillator detectors for biomedical and industrial applications.

Study of the Radiative and Non-Radiative Recombination Processes at Dislocations in Silicon by Photoluminescence and LBIC Measurements

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Pizzini ◽  
S. Binetti ◽  
M. Acciarri ◽  
M. Casati
Keyword(s):  
Radiative Recombination ◽  
Room Temperature ◽  
Light Emission ◽  
Energy Levels ◽  
The Third ◽  
Optical Telecommunications ◽  
Recombination Processes ◽  
Metallic Impurities ◽  
Room Temperature Luminescence ◽  
Dislocation Related Luminescence

AbstractIt is well known that the sharp, room temperature luminescence emission at 1.54 μm from dislocated silicon has set off a great interest for this material in view of its applications in the third window of optical telecommunications. For this reason the dislocation related luminescence in silicon addressed recently a number of investigation aimed at understanding the mechanism of light emission. The problem is still unsolved as most of the experiments done gave contradictory answers to the main questions open, which concern the intrinsic or extrinsic nature of dislocation luminescence and the effect on it of reconstruction, interaction or passivation processes, possibly assisted by metallic or non-metallic impurities.In order to go more insight on the problem, we started a systematic work on CZ silicon, aimed at understanding the properties of dislocation luminescence. The identification of the energy levels involved in the different dislocation PL bands has been obtained.

Size-Dependence of Photoluminescence Property of ZnO Nanoparticles

2014 ◽  
Vol 887-888 ◽  
pp. 143-146 ◽  
Author(s):  
Xiao Fang Wang ◽  
Yun Liang Fang ◽  
Tian Le Li ◽  
Fu Juan Wang
Keyword(s):  
Grain Size ◽  
Lower Energy ◽  
Size Dependence ◽  
Surface States ◽  
Photoluminescence Property ◽  
Precipitation Method ◽  
Pl Spectra ◽  
Broadband Emission ◽  
Band Emission ◽  
20 Nm

Nanometer-sized ZnO crystals with the diameter from 20 nm to 110 nm were prepared by homogenous precipitation method (HPM). The photoluminescence (PL) spectra of as-prepared nanoparticles under excitation at the wavelength of 320 nm were detected. The PL spectra were fitted with Gaussian curves, in which a good fitting consisting of six Gaussian peaks was obtained. We observed that the multi-peak centers do not change much, while the relative amplitude of Gaussian combination to the band-to-band emission decreases rapidly with the increased grain size. It shows that the broadband emission at the lower energy is associated with the surface states.

Dynamical study of the radiative recombination processes in GaN/AlGaN QWs

2008 ◽  
Vol 19 (S1) ◽  
pp. 316-318
Author(s):  
Mahmood Sabooni ◽  
Morteza Esmaeili ◽  
Hamid Haratizadeh ◽  
Bo Monemar ◽  
Hiroshi Amano
Keyword(s):  
Radiative Recombination ◽  
Dynamical Study ◽  
Recombination Processes

Nanocrystalline tungsten oxide thick-films with high sensitivity to H2S at room temperature

2001 ◽  
Vol 77 (1-2) ◽  
pp. 316-321 ◽  
Author(s):  
J.L. Solis ◽  
S. Saukko ◽  
L.B. Kish ◽  
C.G. Granqvist ◽  
V. Lantto
Keyword(s):  
Tungsten Oxide ◽  
Room Temperature ◽  
Thick Films ◽  
High Sensitivity
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