Low-Pressure Chemical Vapor Deposition of Borosilicate Glasses and their Application to Wafer Bonding

1999 ◽  
Vol 587 ◽  
Author(s):  
Darren M. Hansen ◽  
Peter D. Moran ◽  
T. F. Kuech
Keyword(s):  
Wafer Bonding ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Borosilicate Glasses ◽  
Force Microscopy ◽  
Compliant Substrates ◽  
Atomic Force ◽  
Boron Doped ◽  
Plasma Surface Treatment ◽  
Pressure Chemical

AbstractThe essential features of the deposition process and the film properties of borosilicate glasses are presented here as an alternative to pure SiO2in wafer bonding and compliant substrates. While the deposition of SiO2 is a well-studied system, the deposition of boron-doped films is less understood. The deposition rate of the SiO2 mole fraction in the films was accelerated by the presence of trimethylborate and oxygen and this is associated with an increased adsorption of the tetraethylorthosilicate related precursor in the presence of boranols. Typical deposition conditions result in borosilicate glass films with an r.m.s. roughness of ∼0.5 nm as measured by atomic force microscopy. Annealing the films at temperatures above 550°C reduces the film roughness via glass reflow. Room temperature bonding of these films was achieved after a 250 WO2 plasma surface treatment. Fourier-transform infrared investigations of the bonded interface revealed the importance of the role of surface OH and H2O groups in the bonding of these films.

scholarly journals Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD

2007 ◽  
Vol 2 (2) ◽  
pp. 81-84
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
N. C. Frateschi
Keyword(s):  
Quantum Dots ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Nucleation Parameters ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Mean Size ◽  
Germanium Quantum Dots

Germanium quantum dots (Ge-QD) were grown by Low Pressure Chemical Vapor Deposition (LPCVD) on Si nucleus previously grown on 3 nm thick SiO2 ultra thin film. Samples were analyzed by atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). We report the analysis of the influence of the nucleation parameters on size and spatial distribution of Ge-QD. AFM images show a Ge-QD density of around 3.6x1010 cm-2, with an 11 nm mean size and 2.9 nm height. Finally, HRTEM investigation shows that the Ge-QD have a crystalline structure, i.e., they are nanocrystals.

scholarly journals Diamond Films for Implantable Electrodes

10.14311/1638 ◽  
2012 ◽  
Vol 52 (5) ◽  
Author(s):  
Petra Henychová ◽  
Klára Hiřmanová ◽  
Martin Vraný
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Boron Doped ◽  
Implantable Electrodes ◽  
Average Size

Diamond is a promising material for implantable electrodes due to its unique properties. The aim of this work is to investigate the growth of boron-doped nanocrystalline diamond (B-NCD) films by plasma-enhanced microwave chemical vapor deposition at various temperatures, and to propose optimal diamond growth conditions for implantable electrodes. We have investigated the temperature dependence (450 °C–820 °C) of boron incorporation, surface morphology and growth rate on a polished quartz plate. Surface morphology and thickness were examined by atomic force microscopy (AFM).The quality of the films in terms of diamond and non-diamond phase of carbon was investigated by Raman spectroscopy. AFM imaging showed that the size of the grains was determined mainly by the thickness of the films, and varied from an average size of 40 nm in the lowest temperature sample to an average size of 150 nm in the sample prepared at the highest temperature. The surface roughness of the measured samples varied between 10 (495 °C) and 25 nm (800 °C). The growth rate of the sample increased with temperature. We found that the level of boron doping was strongly dependent on temperature during deposition. An optimal B-NCD sample was prepared at 595 °C.

Reliability and degradation modes of 280 nm deep UV LEDs on sapphire

2005 ◽  
Vol 892 ◽  
Author(s):  
Zheng Gong ◽  
Sameer Chhajed ◽  
Mikhail Gaevski ◽  
Wenhong Sun ◽  
Vinod Advivarahan ◽  
...  
Keyword(s):  
Time Constant ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Junction Temperature ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dependent Part ◽  
Deep Uv ◽  
Uv Leds

AbstractIn this paper, we report a study of the degradation of AlGaN-based 280 nm LEDs, which were grown on sapphire substrates using migration-enhanced metalorganic chemical vapor deposition process (MEMOCVD). Electroluminescence (EL), atomic force microscopy (AFM), cathodoluminescence (CL), and scanning electron microscopy (SEM) observations showed that the degradation of deep UV LEDs generally fell into two categories: catastrophic degradation and gradual degradation. The catastrophic degradation was found to be mostly caused by the non-uniformity of surface morphology. The gradual power reduction had two characteristic time constants indicating two possible degradation mechanisms as found from temperature and bias dependent LED power degradation measurements. The faster time constant was bias dependent and virtually constant with temperature whereas the second time constant (slower) varied exponentially with junction temperature. For this temperature dependent part, the activation energies of degradation were determined to be 0.23 eV and 0.27 eV under injected current density of 100 A/cm2 and 200 A/cm2 respectively.

Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD

2009 ◽  
Vol 1202 ◽  
Author(s):  
Goksel Durkaya ◽  
Mustafa Alevli ◽  
Max Buegler ◽  
Ramazan Atalay ◽  
Sampath Gamage ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Stability ◽  
Growth Temperature ◽  
Single Phase ◽  
Chemical Vapor ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical

AbstractThe influence of the growth temperature on the phase stability and composition of single-phase In1-xGaxN epilayers has been studied. The In1-xGaxN epilayers were grown by high-pressure Chemical Vapor Deposition with nominally composition of x = 0.6 at a reactor pressure of 15 bar at various growth temperatures. The layers were analyzed by x-ray diffraction, optical transmission spectroscopy, atomic force microscopy, and Raman spectroscopy. The results showed that a growth temperature of 925°C led to the best single phase InGaN layers with the smoothest surface and smallest grain areas

Experimental Investigation of the Impact of Annealing on Resistivity of Boron-Doped Hydrogenated Nanocrystalline Silicon Thin Films

2010 ◽  
Vol 29-32 ◽  
pp. 1883-1887
Author(s):  
Hai Bin Pan ◽  
Yuan Tian ◽  
Guang Gui Cheng ◽  
Li Qiang Guo
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force ◽  
Boron Doped ◽  
The Impact ◽  
The Relationship

Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). Microstructures of these films were characterized and analyzed by Raman spectrum and atomic force microscopy (AFM). Thickness and resistivity of these films was measured by high-resolution profilometer and four-point probe respectively. The impact of annealing on boron-doped nc-Si:H thin films’ resistivity and the relationship between resistivity and microstructure were investigated. The results show that annealing and the annealing temperature have great impact on resistivity of nc-Si:H thin films as a result of microstructures changing after annealing. Resistivity of nc-Si:H thin films decreases after annealing, but it rises with the increasing annealing temperature in the range of 250°C to 400°C.

A Comparative Study of the Synthesis of Carbon Nanotubes Using Ni and Fe as Catalyst

2009 ◽  
Vol 67 ◽  
pp. 89-94 ◽  
Author(s):  
Joydip Sengupta ◽  
Sovan Kumar Panda ◽  
Chacko Jacob
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Raman Spectroscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Synthesis Of Carbon Nanotubes

The effect of Fe and Ni catalysts on the synthesis of carbon nanotubes (CNTs) using atmospheric pressure chemical vapor deposition (APCVD) was investigated. Distribution of the catalyst particles over the Si substrate was analyzed by atomic force microscopy (AFM). Characterization by X-ray diffraction analysis (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopic measurements over the grown species is reported. The study clearly shows that the catalyst strongly influences morphology and microstructure of the grown CNTs.

Effect of Introducing Free Gaseous Radicals of Trichlorosilane and Ammonia Precursors on Growth and Characteristics of LPCVD a-SiNx Ultra Thin Films

2013 ◽  
Vol 829 ◽  
pp. 401-409
Author(s):  
Armin Salmasi ◽  
Eskandar Keshavarz Alamdari
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Topography ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Arrhenius Behavior ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical ◽  
Rate Ratios

Preparation and characteristics of amorphous silicon nitride (a-SiNx) thin films deposited by low pressure chemical vapor deposition (LPCVD) are investigated. Free gaseous radicals of trichlorosilane (TCS) and ammonia (NH3) are produced by passing each of the precursor gases separately over Pt-Ir/Al2O3 catalyst at the temperature of 600 C. Kinetics studies of the LPCVD are carried out in different total pressures, NH3/TCS flow rate ratios and temperatures. Surface topography, chemical concentrations, growth rate and thickness are studied by Ellipsometry, x-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM) and auger depth profiling (ADP). Analysis of experiments indicates that at the temperatures between 730 C and 830 C, the growth rate of thin films follows an Arrhenius behavior with activation energy of 166.3 KJ.mol-1. The measured hydrogen contamination in a-SiNx ultra thin films is 1.05 at% which is 17 times lower than the corresponding contamination in the films produced by (PECVD) and 3.4 times lower than the contamination in the LPCVD thin films with silane (SiH4) or dichlorosilane (DCS) and Ammonia. The surface topography of the prepared films is smooth and uniform and the thickness varies between 23 and 101 nanometers.

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