Characterization of the low-pressure chemical vapor deposition grown rugged polysilicon surface using atomic force microscopy

1997 ◽  
Vol 15 (3) ◽  
pp. 1007-1013 ◽  
Author(s):  
Yale E. Strausser ◽  
Michael Schroth ◽  
John J. Sweeney III
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical

scholarly journals Characterization of TiN film grown by low-pressure-chemical-vapor-deposition

1997 ◽  
Vol 308-309 ◽  
pp. 594-598 ◽  
Author(s):  
Y.J Mei ◽  
T.C Chang ◽  
J.C Hu ◽  
L.J Chen ◽  
Y.L Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Tin Film ◽  
Pressure Chemical

Preparation and characterization of CrO2 films by Low Pressure Chemical Vapor Deposition from CrO3

2013 ◽  
Vol 539 ◽  
pp. 1-11 ◽  
Author(s):  
C. Aguilera ◽  
J.C. González ◽  
A. Borrás ◽  
D. Margineda ◽  
J.M. González ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hydrogen Treatment ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

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