Deposition of Cubic-SiC Thin Films on Si (111) using the Molecular Ion Beam Technique

1999 ◽  
Vol 585 ◽  
Author(s):  
T. Matsumoto ◽  
K. Mimoto ◽  
M. Kiuchi ◽  
S. Sugimoto ◽  
S. Goto
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electron Diffraction ◽  
Ion Beam ◽  
High Energy ◽  
Energy Electron ◽  
Surface Structures ◽  
High Energy Electron ◽  
Molecular Ion ◽  
Beam Technique

AbstractSiC thin films were formed on Si (111) at growth temperatures of 750–1000 °C using the molecular ion beam technique, with a precursor of methylsilicenium ions (SiCH3+). The chemical bindings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction. As a result, 3C-SiC (111) was grown on Si (111) substrates without carbonized treatments.

Reflection high-energy electron diffraction based texture determination: Magnetic thin films for perpendicular media

2000 ◽  
Vol 87 (9) ◽  
pp. 5693-5695 ◽  
Author(s):  
Dmitri Litvinov ◽  
J. Kent Howard ◽  
Sakhrat Khizroev ◽  
Heng Gong ◽  
David Lambeth
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Magnetic Thin Films ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Perpendicular Media

Ion Beam Induced Conductivity Changes in Glassy Carbon

1989 ◽  
Vol 157 ◽  
Author(s):  
D. McCulloch ◽  
S. Prawer
Keyword(s):  
Raman Spectroscopy ◽  
Electron Diffraction ◽  
Glassy Carbon ◽  
Ion Beam ◽  
High Energy ◽  
Convincing Evidence ◽  
High Energy Electron ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
High Doses

ABSTRACTIon beam irradiation of Glassy Carbon is shown to increase its resistivity by up to eight orders of magnitude. These changes in resistivity are correlated with results obtained from Raman spectroscopy and Reflection High Energy Electron Diffraction. At high doses of C implantation there is convincing evidence that ion beam irradiation partially graphitizes the surface of Glassy Carbon.

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