Monitoring the growth of SrTiO 3 and La 0.66 Sr 0.33 MnO 3 thin films using a low-pressure Reflection High Energy Electron Diffraction system

2016 ◽  
Vol 503 ◽  
pp. 100-105 ◽  
Author(s):  
Bernard Mercey ◽  
Adrian David ◽  
Olivier Copie ◽  
Wilfrid Prellier
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Low Pressure ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Reflection high-energy electron diffraction based texture determination: Magnetic thin films for perpendicular media

2000 ◽  
Vol 87 (9) ◽  
pp. 5693-5695 ◽  
Author(s):  
Dmitri Litvinov ◽  
J. Kent Howard ◽  
Sakhrat Khizroev ◽  
Heng Gong ◽  
David Lambeth
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Magnetic Thin Films ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Perpendicular Media

Deposition of Cubic-SiC Thin Films on Si (111) using the Molecular Ion Beam Technique

1999 ◽  
Vol 585 ◽  
Author(s):  
T. Matsumoto ◽  
K. Mimoto ◽  
M. Kiuchi ◽  
S. Sugimoto ◽  
S. Goto
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electron Diffraction ◽  
Ion Beam ◽  
High Energy ◽  
Energy Electron ◽  
Surface Structures ◽  
High Energy Electron ◽  
Molecular Ion ◽  
Beam Technique

AbstractSiC thin films were formed on Si (111) at growth temperatures of 750–1000 °C using the molecular ion beam technique, with a precursor of methylsilicenium ions (SiCH3+). The chemical bindings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction. As a result, 3C-SiC (111) was grown on Si (111) substrates without carbonized treatments.

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