Atomic-Resolution Z-Contrast Imaging and its Application to Compositional Ordering and Segregation

1999 ◽  
Vol 583 ◽  
Author(s):  
S. J. Pennycook ◽  
Y. Yan ◽  
A. Norman ◽  
Y. Zhang ◽  
M. Al-Jassim ◽  
...  

AbstractIn the last ten years, the scanning transmission electron microscope (STEM) has become capable of forming electron probes of atomic dimensions making possible a new approach to high-resolution electron microscopy, Z-contrast imaging. Formed by mapping the intensity of high-angle scattered electrons as the probe is scanned across the specimen, the Z-contrast image represents a direct map of the specimen scattering power at atomic resolution. It is an incoherent image, and can be directly interpreted in terms of atomic columns. High angle scattering comes predominantly from the atomic nuclei, so the scattering cross section depends on atomic number (Z) squared. Z-contrast microscopy can therefore be used to study compositional ordering and segregation at the atomic scale. Here we present three examples of ordering: first, ferroelectric materials, second, III-V semiconductor alloys, and finally, cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.

Author(s):  
N. D. Browning ◽  
D. J. Wallis ◽  
S. Sivananthan ◽  
P. D. Nellist ◽  
S. J. Pennycook

Materials properties associated with interfaces and defects are dominated by atomic scale fluctuations in composition, structure and bonding. Although electron energy loss spectroscopy (EELS) provides a powerful tool to probe these features, low signal, lens aberrations, image coherence and specimen drift preclude the use of spectrum imaging and energy filtered imaging for these high-resolution problems. However, by utilizing Z-contrast imaging in conjunction with EELS in the scanning transmission electron microscope (STEM), these limitations are largely overcome and EELS appears capable of providing fudamental 3-D characterization of defect and interface structures with atomic resolution and sensitivity.The main premise in utilizing these combined techniques is that the properties of defects and interfaces must be associated with structural differences relative to the bulk. If those structural differences can be located, then it is only necessary to perform spectroscopy in their vicinity to understand the structure property relationship. For crystalline materials in zone-axis orientations, the Z-contrast image provides this atomic resolution structural map. As this direct image is generated with only the high-angle scattering, it can be used to position the electron probe with atomic precision and does not interfere with the low-angle scattering for spectroscopy.


1999 ◽  
Vol 589 ◽  
Author(s):  
Y. Ito ◽  
S. Stemmer ◽  
R. F. Klie ◽  
N. D. Browning ◽  
A. Sane ◽  
...  

AbstractThe high mobility of anion vacancies in oxygen deficient perovskite type materials makes these ceramics potential candidates for oxygen separation membranes. As a preliminary investigation of the defect chemistry in these oxides, we show here the analysis of SrCoO3−σ using atomic resolution Z-contrast imaging and electron energy loss spectroscopy in the scanning transmission electron microscope. In particular, after being subjected to oxidation/reduction cycles at high temperatures we find the formation of ordered microdomains with the brownmillerite structure.


Author(s):  
N. D. Browning ◽  
M. M. McGibbon ◽  
M. F. Chisholm ◽  
S. J. Pennycook

Characterization of grain boundaries in ceramics is complicated by the multicomponent nature of the materials, the presence of secondary phases, and the tendency for the grain boundary plane to “wander” on the length scale of a few nanometers. However, recent developments in the scanning transmission electron microscope (STEM) have now made it possible to correlate directly the structure, composition and bonding at grain boundaries on the atomic scale. This direct experimental characterization of grain boundaries is achieved through the combination of Z-contrast imaging (structure) and electron energy loss spectroscopy (EELS) (composition and bonding). For crystalline materials in zone-axis orientations, where the atomic spacing is larger than the probe size, the Z-contrast technique provides a direct image of the metal (high Z) columns. This image, being formed from only the high-angle scattering, can be used to position the electron probe with atomic precision for simultaneous EELS. Under certain collection conditions, the spectrum can have the same atomic spatial resolution as the image, thus permitting the spectra to be correlated with a known atomic location.


2000 ◽  
Vol 6 (S2) ◽  
pp. 192-193
Author(s):  
Y. Ito ◽  
S. Stemmer ◽  
R.F. Klie ◽  
N.D. Browning ◽  
T.J. Mazanec

Perovskite-type oxides with high electronic and ionic conductivity are very promising materials for use as dense ceramic membranes for oxygen separation. For the successful implementation of practical ceramic membranes, a full understanding of the parameters controlling the degree of non-stoichiometry, i.e. the defect chemistry is essential. A combination of Z-contrast imaging and electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) can be used to directly image crystal and defect structures and the effect of the structures on the local electronic properties (i.e. oxygen coordination and cation valence). Here the defect chemistry in SrCoO3-δ before and after a reduction treatment at high temperatures is investigated in the JEOL 201 OF STEM. This material is known to exist in a wide a variety of phases with different crystal structures, compositions and valence states of cobalt, and can be highly oxygen deficient.


Author(s):  
M. M. McGibbon ◽  
N. D. Browning ◽  
M. F. Chisholm ◽  
A. J. McGibbon ◽  
S. J. Pennycook ◽  
...  

High-resolution Z-contrast imaging in the scanning transmission electron microscope (STEM) forms an incoherent image in which changes in atomic structure and composition across an interface can be interpreted intuitively without the need for preconcieved atomic structure models. Since the Z-contrast image is formed by electrons scattered through high angles, parallel detection electron energy loss spectroscopy (PEELS) can be used simultaneously to provide complementary chemical information on an atomic scale. The fine structure in the PEEL spectra can be used to investigate the local electronic structure and the nature of the bonding across the interface. In this paper we use the complimentary techniques of high resolution Z-contrast imaging and PEELS to investigate the atomic structure and chemistry of a 25 degree symmetric tilt boundary in a bicrystal of the electroceramic SrTiO3.Figure 1(a) shows a Z-contrast image of a symmetric region of the tilt boundary. The brightest spots in the image correspond to the increased scattering power of the Sr atomic columns (Z=38) with theless bright spots corresponding to the Ti atomic columns (Z=22). The lighter O atomic columns are notvisible in a Z-contrast image.


2001 ◽  
Vol 7 (S2) ◽  
pp. 308-309
Author(s):  
N. D. Browning ◽  
J. P. Buban ◽  
Y. Ito ◽  
R. F. Klie ◽  
Y. Lei

The properties of ceramic oxides being developed for such varied applications as fuel cells, ionic transporting membranes, high-Tc superconductors, ferroelectrics and varistors are dominated by the presence of grain boundaries. Key to controlling the electronic properties of the grain boundaries in these materials is a fundamental understanding of the complex relationship between structure, composition and local electronic structure. The ability to characterize and directly correlate these parameters on the atomic scale is afforded by the combination of Z-contrast imaging and electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM). Furthermore, the recent development of in-situ heating capabilities in the JEOL 201 OF STEM/TEM permits atomic resolution analysis to be performed at elevated temperatures and the interactions of grain boundaries with the oxygen vacancies determined.Figure 1 shows an example of the type of experiment that can be performed using these methods.


Science ◽  
2020 ◽  
Vol 367 (6482) ◽  
pp. 1124-1127 ◽  
Author(s):  
F. S. Hage ◽  
G. Radtke ◽  
D. M. Kepaptsoglou ◽  
M. Lazzeri ◽  
Q. M. Ramasse

Single-atom impurities and other atomic-scale defects can notably alter the local vibrational responses of solids and, ultimately, their macroscopic properties. Using high-resolution electron energy-loss spectroscopy in the electron microscope, we show that a single substitutional silicon impurity in graphene induces a characteristic, localized modification of the vibrational response. Extensive ab initio calculations reveal that the measured spectroscopic signature arises from defect-induced pseudo-localized phonon modes—that is, resonant states resulting from the hybridization of the defect modes and the bulk continuum—with energies that can be directly matched to the experiments. This finding realizes the promise of vibrational spectroscopy in the electron microscope with single-atom sensitivity and has broad implications across the fields of physics, chemistry, and materials science.


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