scholarly journals Simultaneous atomic-resolution electron ptychography and Z-contrast imaging of light and heavy elements in complex nanostructures

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
H. Yang ◽  
R. N. Rutte ◽  
L. Jones ◽  
M. Simson ◽  
R. Sagawa ◽  
...  
Keyword(s):  
Atomic Resolution ◽  
Heavy Elements ◽  
Contrast Imaging ◽  
Resolution Electron ◽  
Z Contrast ◽  
Complex Nanostructures

Atomic-Resolution Z-Contrast Imaging and its Application to Compositional Ordering and Segregation

1999 ◽  
Vol 583 ◽  
Author(s):  
S. J. Pennycook ◽  
Y. Yan ◽  
A. Norman ◽  
Y. Zhang ◽  
M. Al-Jassim ◽  
...  
Keyword(s):  
High Resolution Electron Microscopy ◽  
Scanning Transmission Electron Microscope ◽  
Ferroelectric Materials ◽  
Atomic Scale ◽  
Atomic Resolution ◽  
High Angle ◽  
Contrast Imaging ◽  
Resolution Electron ◽  
Scanning Transmission ◽  
Z Contrast

AbstractIn the last ten years, the scanning transmission electron microscope (STEM) has become capable of forming electron probes of atomic dimensions making possible a new approach to high-resolution electron microscopy, Z-contrast imaging. Formed by mapping the intensity of high-angle scattered electrons as the probe is scanned across the specimen, the Z-contrast image represents a direct map of the specimen scattering power at atomic resolution. It is an incoherent image, and can be directly interpreted in terms of atomic columns. High angle scattering comes predominantly from the atomic nuclei, so the scattering cross section depends on atomic number (Z) squared. Z-contrast microscopy can therefore be used to study compositional ordering and segregation at the atomic scale. Here we present three examples of ordering: first, ferroelectric materials, second, III-V semiconductor alloys, and finally, cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.

Atomic resolution Z-contrast imaging of semiconductors

2000 ◽  
Vol 49 (2) ◽  
pp. 231-244 ◽  
Author(s):  
Y. Xin ◽  
E. M. James ◽  
N. D. Browning ◽  
S. J. Pennycook
Keyword(s):  
Atomic Resolution ◽  
Contrast Imaging ◽  
Z Contrast

Quantitative HREM: Reliable Structure Determination of Grain Boundaries in SrTiO3

2001 ◽  
Vol 7 (S2) ◽  
pp. 310-311
Author(s):  
Thomas Gemming
Keyword(s):  
Imaging Techniques ◽  
Quantitative Information ◽  
Small Error ◽  
Atomic Resolution ◽  
Short Exposure ◽  
Contrast Imaging ◽  
Short Exposure Time ◽  
Analysis Of The Images ◽  
Pm 10 ◽  
Z Contrast

High resolution transmission electron microscopy (HREM) is an excellent experimental method to image grain boundary structures with atomic resolution. The advantage of the method is the short exposure time of only about one second that is needed to record an image. Other methods like Z-contrast imaging require much longer exposure times and are therefore much more prone to specimen drift during recording. However there is the remaining difficulty to HREM that the evaluation of experimental images is not straightforward and a thorough analysis of the images is necessary in order to deduce quantitative information with small error bars of only a few pm (10-15m). A second inherent difficulty common to all atomic resolution imaging techniques is that the information is retrieved from a very small area of a specimen. The question arising from that is: can we nevertheless be sure to obtain a representative answer to a “real world” material science problem? A positive answer to this question is given by the investigations presented here.

Measuring spin-state and ferromagnetic transitions in La1-xSrxCoO3 using in-situ atomic-resolution Z-contrast imaging and EELS in

2012 ◽  
Vol 18 (S2) ◽  
pp. 380-381
Author(s):  
A. Gulec ◽  
R.F. Klie
Keyword(s):  
Spin State ◽  
Atomic Resolution ◽  
Contrast Imaging ◽  
Z Contrast

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

scholarly journals Atomic Resolution Z-Contrast Imaging of the Interface Between Non-Polar a-ZnO Grown on r-Cut Al2O3 by Pulsed Laser Deposition

2010 ◽  
Vol 16 (S2) ◽  
pp. 154-155
Author(s):  
H Zhou ◽  
MF Chisholm ◽  
P Pant ◽  
J Gazquez ◽  
SJ Pennycook ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Atomic Resolution ◽  
Contrast Imaging ◽  
Z Contrast

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

scholarly journals Quantitative Analysis of Atomic Resolution HAADF-STEM (Z-contrast) Imaging for PbTiO3 / SrTiO3 Substrate Dielectric Thin Films

2006 ◽  
Vol 12 (S02) ◽  
pp. 1352-1353 ◽  
Author(s):  
Y Kotaka ◽  
K Honda ◽  
T Yamazaki ◽  
K Watanabe ◽  
H Fujisawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantitative Analysis ◽  
Atomic Resolution ◽  
Contrast Imaging ◽  
Dielectric Thin Films ◽  
Srtio3 Substrate ◽  
Z Contrast

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

scholarly journals Atomic Resolution Z-contrast Imaging and EELS: Application for Ge/SiO2 Interface

2003 ◽  
Vol 9 (S02) ◽  
pp. 818-819
Author(s):  
S. Lopatin ◽  
G. Duscher ◽  
W. Windl
Keyword(s):  
Atomic Resolution ◽  
Contrast Imaging ◽  
Z Contrast
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