Structural, Magnetic Properties of the Electrochemically Deposited Arrays of Nickel Nanowires

1999 ◽  
Vol 581 ◽  
Author(s):  
H.R. Khan ◽  
K. Petrikowski
Keyword(s):  
Magnetic Properties ◽  
Magnetic Anisotropy ◽  
Electrochemical Deposition ◽  
Crystallographic Orientation ◽  
Remanent Magnetization ◽  
Room Temperature ◽  
Copper Substrate ◽  
Perpendicular Magnetic Anisotropy ◽  
Nickel Nanowires ◽  
Electrochemically Deposited

ABSTRACTThe room temperature structural, magnetization and magnetoresistive properties of Ni-nanowires of diameters 18, 30 and 78 nm and various lengths, fabricated by electrochemical deposition of Ni in the nanopores of anodic alumina, are investigated. The crystallographic orientation depends on the diameter of nanowires. Nanowires show perpendicular magnetic anisotropy and enhanced coercivity (Hc) and remanent magnetization (Mr) values of up to 500 Oe and 50% respectively. An electrodeposited Ni-layer (5 μm) on copper substrate shows in plane magnetic anisotropy and the Hc and Mr values are 97 Oe and 37%. Ni-nanowires and Ni-layer show an anisotropic magnetoresistive behaviour.

Ni thickness influence on magnetic properties (Co/Ni/Co/Pt) multilayers with perpendicular magnetic anisotropy

2017 ◽  
Vol 441 ◽  
pp. 585-589 ◽  
Author(s):  
R. Sbiaa ◽  
I.A. Al-Omari ◽  
M. Al Bahri ◽  
P.R. Kharel ◽  
M. Ranjbar ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy

Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method

2014 ◽  
Vol 616 ◽  
pp. 247-251
Author(s):  
Tim Yang ◽  
Z.Q. Wang ◽  
Makoto Kohda ◽  
Takeshi Seki ◽  
Koki Takanashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition ◽  
Significant Damage ◽  
Arbitrary Thickness ◽  
High Kinetic Energy

We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF magnetron sputtering, AlO atoms with high kinetic energy are ejected from a sputter target resulting in the degradation of Pt/Co films, while the process of deposition of AlO by ALD is governed by a series of chemically reactive condensations allowing for arbitrary deposition thickness of AlO.

Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Deposition ◽  
Dark Current ◽  
Room Temperature ◽  
Volume Ratio ◽  
Deposition Process ◽  
X Ray ◽  
Current Voltage ◽  
Electrochemically Deposited ◽  
A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

scholarly journals Room-temperature perpendicular magnetic anisotropy of Pt/Co/AlOx trilayers on SrTiO3 (001)

AIP Advances ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 105010
Author(s):  
Ye Du ◽  
Shoma Arai ◽  
Shingo Kaneta-Takada ◽  
Le Duc Anh ◽  
Shutaro Karube ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Room Temperature ◽  
Perpendicular Magnetic Anisotropy

A tetragonal phase Mn2B2 sheet: a stable room temperature ferromagnet with sizable magnetic anisotropy

2020 ◽  
Vol 22 (19) ◽  
pp. 10893-10899 ◽  
Author(s):  
Yusuf Zuntu Abdullahi ◽  
Zeynep Demir Vatansever ◽  
Ethem Aktürk ◽  
Ümit Akıncı ◽  
Olcay Üzengi Aktürk
Keyword(s):  
Magnetic Properties ◽  
Magnetic Anisotropy ◽  
Tetragonal Phase ◽  
Room Temperature ◽  
Electronic Devices ◽  
Two Dimensional ◽  
Metal Boride

Exploring the magnetic properties of two-dimensional (2D) metal boride (MBene) sheets for spin-based electronics is gaining importance for developing electronic devices.

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