In Situ Ellipsometry Study of the Diamond Film Evolution Process

1999 ◽  
Vol 580 ◽  
Author(s):  
L.M. Cancel ◽  
O.L. Figueroa ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ex Situ ◽  
Film Microstructure

AbstractWe employed in situ ellipsometry to monitor and study the nucleation and growth processes of diamond thin films fabricated by chemical vapor deposition. The films were grown on Si substrates in a hot filament chemical vapor deposition (HFCVD) system. We monitored the effective extinction coefficient (k) at 1.96 eV of the diamond films during growth through ellipsometry. The behavior of this parameter was found to be reproducible, making it suitable as a basis for dividing the deposition process into intervals. The film growth was aborted at various k values yielding diamond film samples that represent snapshots of the growth process at different stages. These films were removed for ex situ characterization using Raman spectroscopy and scanning electron microscopy (SEM). These characterizations were used to correlate the ellipsometric data with film microstructure, enabling us from now on to monitor the diamond film growth in real time and to design experiments targeted at modifying the film microstructure by changing growth parameters in the middle of film fabrication.

In-Situ Observation of Chemical Vapor Deposition of Thin Sige Films by Optical Reflection Interferometry

1994 ◽  
Vol 375 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
M. Weidner ◽  
F. G. Böbel ◽  
B. Hertel
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Ex Situ ◽  
In Situ Observation ◽  
Optical Reflection ◽  
Initial Stage

AbstractChemical Vapor Deposition of Si1-x Gex – films on Si (100) and of polycrystalline Si1-x Gex, layers on SiO2 – coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500°C – 800°C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITIERS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. The reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

DYNAMIC SCALING PHENOMENA IN DIAMOND FILM GROWTH

2001 ◽  
Vol 08 (03n04) ◽  
pp. 347-351 ◽  
Author(s):  
M. CATTANI ◽  
M. C. SALVADORI
Keyword(s):  
Chemical Vapor Deposition ◽  
Differential Equations ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Dynamic Scaling ◽  
Diamond Film Growth

In this paper we investigate how the growth dynamics of diamond films, synthesized by plasma-enhanced chemical vapor deposition, can be explained within the framework of the Edwards–Wilkinson and Kardar–Parisi–Zhang stochastic differential equations.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Atmospheric Pressure Chemical Vapor Deposition Growth Window for Undoped Gallium Antimonide

1999 ◽  
Vol 14 (4) ◽  
pp. 1238-1245 ◽  
Author(s):  
A. Subekti ◽  
E. M. Goldys ◽  
Melissa J. Paterson ◽  
K. Drozdowicz-Tomsia ◽  
T. L. Tansley
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Gallium Antimonide ◽  
Film Growth ◽  
Growth Parameters ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 l/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-1 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

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