SIMS and Cl Characterization of Manganese-Doped Aluminum Nitride Films

1999 ◽  
Vol 572 ◽  
Author(s):  
R. C. Tucceri ◽  
C. D. Bland ◽  
M. L. Caldwell ◽  
M. H. Ervin ◽  
N. P. Magtoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Emission Band ◽  
Emission Spectra ◽  
Strong Emission ◽  
Oxygen Contamination ◽  
Strong Emission Band ◽  
Edx Analyses ◽  
First Time

ABSTRACTWe have recently carried out MOCVD experiments that showed for the first time the doping of AlN thin films with manganese. Films of AlN that were doped with less than 0.1% of manganese showed emission bands at 427 nm, 488 nm and 600 nm in accordance with previous published excitation and emission spectra of manganese incorporated in bulk A1N. A film with a higher percentage of manganese (1.7%) grown on top of a pure A1N layer (underlayer) showed weak emission at 601 nm. A portion of the underlayer not covered during growth of the overlayer has a very strong emission band at 408 nm and a weaker band at 605 nm. SIMS and EDX analyses of this film revealed both carbon and oxygen contamination as well as diffusion of manganese into the A1N underlayer. The band at 408 nm is associated with direct gap emission from oxygen contaminated A1N and the band at 605 nm is from manganese incorporated by diffusion into the A1N underlayer.

Study on the Luminescence and Reflection Spectra of Al2O3 Doped Er2O3 Films on Si Substrates

2011 ◽  
Vol 474-476 ◽  
pp. 345-348
Author(s):  
Yan Yan Zhu ◽  
Ze Bo Fang ◽  
Yu Zhao ◽  
Hui Yu Li ◽  
Jing Chen ◽  
...  
Keyword(s):  
Refractive Index ◽  
Magnetron Sputtering ◽  
Emission Band ◽  
Emission Spectra ◽  
Reflection Spectra ◽  
Radio Frequency Magnetron Sputtering ◽  
Strong Emission ◽  
Si Substrates ◽  
Si Solar Cells ◽  
Strong Emission Band

Amorphous Al2O3 doped Er2O3 films were deposited on Si(001) substrates by radio frequency magnetron sputtering technique. Emission spectra exhibit a strong emission band around 410 nm and a series of emission band near 970, 980, 1018, 1042 and 1080nm. Ellipsometry measurements show that the refractive indexof the ErAlO films in the region of 400～1000 nm is between 1.76-1.83. The reflectivity of the ErAlO on Si is much smaller than that of clean Si and pure Er2O3 films. All the results indicate that ErAlO could be a promising material for Si solar cells.

Low Reflectivity ErAlO Film on Si as Anti-Reflecting Coating in Solar Cells

2011 ◽  
Vol 323 ◽  
pp. 75-78
Author(s):  
Yan Yan Zhu ◽  
Ze Bo Fang ◽  
Hui Yu Li ◽  
Jing Chen ◽  
Hai Jing Cao
Keyword(s):  
Solar Cells ◽  
Magnetron Sputtering ◽  
Emission Band ◽  
Weighted Average ◽  
Emission Spectra ◽  
Radio Frequency Magnetron Sputtering ◽  
Strong Emission ◽  
Si Solar Cells ◽  
Strong Emission Band ◽  
Amorphous Al2o3

Amorphous Al2O3 and Er2O3 alloyed films were deposited on Si(001) substrates by radio frequency magnetron sputtering technique. Ellipsometry measurements show that the weighted average reflectivity in the wavelength between 400 and 1000 nm for the ErAlO is 2.25%. Emission spectra exhibit a strong emission band around 410 nm and a series of emission band near 970 and 1019 nm. All the results indicate that ErAlO could be a promising material for Si solar cells.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

Optical Characterization of Europium-Doped Calcium Fluoride Thin Films Grown on Silicon by Molecular Beam Epitaxy

1996 ◽  
Vol 446 ◽  
Author(s):  
X.M. Fang ◽  
W.K. Liu ◽  
W. Shan ◽  
T. Chatterjee ◽  
P.J. Mccann ◽  
...  
Keyword(s):  
Thin Films ◽  
Emission Spectra ◽  
Vibrational States ◽  
Zero Phonon Line ◽  
Phonon Line ◽  
X Ray ◽  
Integrated Intensity ◽  
Vibronic Sideband ◽  
Anti Stokes

AbstractPhotoluminescence measurements have been made on Eu-doped CaF2 thin films grown on Si(100) substrates. The dependence of the integrated intensity of both the zero-phonon line and the vibronic sideband on temperature and Eu concentration has been studied in the range of 10 – 300 K and 0.14 – 7.48 at. %, respectively. An anti-Stokes feature is visible in the emission spectra at 75 K, indicating a significant occupation of the excited vibrational states of Eu2+ by phonons before the transition at temperatures above 75 K. The integrated intensity of the vibronic sideband increases slightly as temperature increases. The solubility of Eu in CaF2 thin films grown on Si(100) is found to be somewhere around 4.05 at. % as confirmed by the increase of the line width of x-ray rocking curves and the decrease in the integrated intensity of the zero-phonon line with Eu concentration.

Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

2015 ◽  
Vol 574 ◽  
pp. 110-114 ◽  
Author(s):  
H. Oikawa ◽  
R. Akiyama ◽  
K. Kanazawa ◽  
S. Kuroda ◽  
I. Harayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Gate Insulator

A SIMPLE XUV SOURCE AT 13.5 NM BASED ON ABLATIVE CAPILLARY DISCHARGE

2002 ◽  
Vol 09 (01) ◽  
pp. 627-630 ◽  
Author(s):  
ŽELJKO ANDREIĆ ◽  
SAMIR SHAKIR ELLWI ◽  
SANDA PLESLIĆ ◽  
HANS-JOACHIM KUNZE
Keyword(s):  
Polyvinyl Chloride ◽  
Spectral Region ◽  
Emission Band ◽  
Noble Gases ◽  
Region Of Interest ◽  
Radiation Energy ◽  
Capillary Discharge ◽  
Strong Emission ◽  
Strong Emission Band

A XUV source that produces a strong emission band at the wavelength of 13.5 nm with a FWHM of 0.6 nm and a duration of about 100 ns is described. In particular this wavelength has attracted the attention of many scientists working in the field by being a good candidate for the development of XUV lithography. The source was generated by using an ablative capillary discharge where the capillary was made of PVC (polyvinyl chloride). A remarkable burst of radiation at the above wavelength was recorded, the intensity of the radiation being higher by a factor of 10 in the spectral region of interest, as compared to usually used capillaries made of POM (polyacetal), or to recently developed capillary discharges in noble gases. Total XUV radiation energy of up to 50 mJ per pulse seems to be possible with such a device. Due to its simplicity, the described capillary discharge is a good candidate for a simple incoherent XUV source at 13.5 nm.

Structural and Electronic Characterization of Epitaxially-Grown Ferroelectric Vinylidene Fluoride Oligomer Thin Films

1999 ◽  
Vol 600 ◽  
Author(s):  
K. Ishida ◽  
K. Noda ◽  
A. Kubono ◽  
T. Horiuchi ◽  
H. Yamada ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrostatic Interactions ◽  
Vinylidene Fluoride ◽  
Substrate Surface ◽  
Molecular Chain ◽  
Polar Form ◽  
Electric Pulses ◽  
Afm Probe ◽  
First Time

AbstractThe structural and electric properties of newly synthesized vinylidene fluoride (VDF) oligomer thin films evaporated on various substrate were investigated. The structural behavior of the VDF oligomer thin films strongly depended on the kinds of substrate and substrate temperature during film preparation. In particular, the VDF oligomers epitaxially grew on KBr(001), aligned their molecular chain along the <110> direction of substrate surface, and were similar to polar Form Itype crystals of poly(VDF). While, the thin films evaporated on NaCl(001), SiO2/Si were non-polar Form II-type or mixture of both Form I- and Form II-type crystals with their molecular chain normal to the surface. These facts indicated that crystal field of substrate, based on van der Waals and electrostatic interactions, strongly influenced to ferroelectric phase transition of the VDF oligomer. In addition, we demonstrate the formation of the local polarized domains in the epitaxial crystals by applying electric pulses from a conducting AFM probe used as a positionable topelectrode, and confirm their piezoelectricity of the VDF oligomers for the first time.

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