Structural and Electronic Characterization of Epitaxially-Grown Ferroelectric Vinylidene Fluoride Oligomer Thin Films

1999 ◽  
Vol 600 ◽  
Author(s):  
K. Ishida ◽  
K. Noda ◽  
A. Kubono ◽  
T. Horiuchi ◽  
H. Yamada ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrostatic Interactions ◽  
Vinylidene Fluoride ◽  
Substrate Surface ◽  
Molecular Chain ◽  
Polar Form ◽  
Electric Pulses ◽  
Afm Probe ◽  
First Time

AbstractThe structural and electric properties of newly synthesized vinylidene fluoride (VDF) oligomer thin films evaporated on various substrate were investigated. The structural behavior of the VDF oligomer thin films strongly depended on the kinds of substrate and substrate temperature during film preparation. In particular, the VDF oligomers epitaxially grew on KBr(001), aligned their molecular chain along the <110> direction of substrate surface, and were similar to polar Form Itype crystals of poly(VDF). While, the thin films evaporated on NaCl(001), SiO2/Si were non-polar Form II-type or mixture of both Form I- and Form II-type crystals with their molecular chain normal to the surface. These facts indicated that crystal field of substrate, based on van der Waals and electrostatic interactions, strongly influenced to ferroelectric phase transition of the VDF oligomer. In addition, we demonstrate the formation of the local polarized domains in the epitaxial crystals by applying electric pulses from a conducting AFM probe used as a positionable topelectrode, and confirm their piezoelectricity of the VDF oligomers for the first time.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Stability and Structural Characterization of Epitaxial NdNiO3 Films Grown by Pulsed Laser Deposition

2000 ◽  
Vol 658 ◽  
Author(s):  
Trong-Duc Doan ◽  
Cobey Abramowski ◽  
Paul A. Salvador
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Monoclinic Distortion

ABSTRACTThin films of NdNiO3 were grown using pulsed laser deposition on single crystal substrates of [100]-oriented LaAlO3 and SrTiO3. X-ray diffraction and reflectivity, scanning electron microscopy, and atomic force microscopy were used to characterize the chemical, morphological and structural traits of the thin films. Single-phase epitaxial films are grown on LaAlO3 and SrTiO3 at 625°C in an oxygen pressure of 200 mTorr. At higher temperatures, the films partially decompose to Nd2NiO4 and NiO. The films are epitaxial with the (101) planes (orthorhombic Pnma notation) parallel to the substrate surface. Four in-plane orientational variants exist that correspond to the four 90° degenerate orientations of the film's [010] with respect to the in-plane substrate directions. Films are observed to be strained in accordance with the structural mismatch to the underlying substrate, and this leads, in the thinnest films on LaAlO3, to an apparent monoclinic distortion to the unit cell.

Modelling of Multi-Ion-Beam Reactive Cosputtering for Metal Oxide Thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
D. Q. Xiao ◽  
J. G. Zhu ◽  
Z. H. Qian ◽  
W. B. Peng ◽  
L. F. Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Numerical Simulation ◽  
Metal Oxide ◽  
Ion Beam ◽  
Substrate Surface ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
A New Technique ◽  
Computer Numerical Simulation ◽  
First Time

AbstractVery recently a new technique named multi-ion-bram reactive cosputtering(MIBRECS) was developed for preparing multi-component metal oxide thin films. Epitaxial or highly oriented (Pb,La) TiO3 thin films sputtered from pure metals of lead, titanium and lathanium were deposited by using this technique. In order to consummate the technique and to study the mechanism of reactive cosputtering, a general model of multi-ion-beam reactive cosputter-ing was proposed for the first time based on the well-known gas kinetics under stable sputtering circumstances, and a computer numerical simulation of the model was carried out with the parameters adopted in our experiments. The relationships among the sputtering ratioes of the targets, and the coverage ratioes of simple substances and oxides of the target metals on substrate surface with the total reactive gas flux and the densities of the sputtering ion beam were obtained respectively, and the hysteresis effect of the characteristic of reactive sputtering and the interactions during multi-ion-beam reactive cosputtering processes were also obtained. The numerical simulation results are at least qualitively in agreement with the experiments.

scholarly journals Chlorosubstituted Copper Phthalocyanines: Spectral Study and Structure of Thin Films

Molecules ◽  
2020 ◽  
Vol 25 (7) ◽  
pp. 1620 ◽  
Author(s):  
Alexandr Sukhikh ◽  
Dmitry Bonegardt ◽  
Darya Klyamer ◽  
Pavel Krasnov ◽  
Tamara Basova
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Substrate Surface ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
X Ray ◽  
Disordered Films ◽  
Copper Phthalocyanines ◽  
First Time ◽  
Ir And Raman

In this work, the tetra-, octa- and hexadecachloro-substituted copper phthalocyanines CuPcClx (where x can equal 4, 8 or 16) were investigated by the methods of vibrational (IR and Raman) spectroscopy and X-ray diffraction. The assignment of the most intense bands, both in IR and Raman spectra, was carried out on the basis of DFT calculations. The structure of a CuPcCl4 single crystal grown by sublimation in vacuum was refined for the first time. The effect of chloro-substitution on the structure of CuPcClx thin films deposited in a vacuum onto a glass substrate at 50 and 200 °C was studied. It was shown that CuPcCl4 formed polycrystalline films with the preferential orientation of the (100) crystallographic plane of crystallites parallel to the substrate surface when deposited on a substrate at 50 °C. Introduction of more Cl-substituents into the phthalocyanine macrocycle leads to the formation of amorphous films on the substrates at 50 °C. At the elevated substrate temperature, the growth of polycrystalline disordered films was observed for all three copper phthalocyanines.

Growth and Characterization of Epitaxial BaF2 on InP

1992 ◽  
Vol 281 ◽  
Author(s):  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Substrate Temperature ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Surface Scan ◽  
First Time

ABSTRACTEpitaxial thin films of BaF2 were deposited for the first time onto (100) InP at a substrate temperature of around 450°C to 480°C by RF magnetron sputtering. The structural properties of the BaF2 film were a strong function of the substrate temperature during film deposition. X-ray diffraction analysis revealed a pure c-axis orientation perpendicular to the substrate surface. Scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology. Ellipsometry measurement on the films gave a refractive index in the range of 1.4 to 1.6. The capacitance vs voltage analysis on a capacitor with a structure of Au/BaF3/InP demonstrated a dielectric constant of around 7.3 for the BaF2.

Structural and Ferroelectric Characterization of Uniaxially Oriented Vinylidene Fluoride Oligomer Thin Films

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DK05 ◽  
Author(s):  
Yusuke Kuroda ◽  
Yasuko Koshiba ◽  
Masahiro Misaki ◽  
Satoshi Horie ◽  
Kenji Ishida ◽  
...  
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride

Fabrication and Characterization of Uniaxially Oriented Vinylidene Fluoride Oligomer Thin Films

2011 ◽  
Author(s):  
Y. Kuroda ◽  
Y. Koshiba ◽  
M. Misaki ◽  
S. Horie ◽  
K. Ishida ◽  
...  
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Fabrication And Characterization

scholarly journals Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

2018 ◽  
Vol 9 ◽  
pp. 1868-1880 ◽  
Author(s):  
Irini Michelakaki ◽  
Nikos Boukos ◽  
Dimitrios A Dragatogiannis ◽  
Spyros Stathopoulos ◽  
Costas A Charitidis ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Oxidation ◽  
Ambient Air ◽  
Additional Treatment ◽  
Nanoparticle Deposition ◽  
Gas Condensation ◽  
Hexagonal Close Packed ◽  
Charged Nanoparticles ◽  
First Time

In this work we study the fabrication and characterization of hafnium nanoparticles and hafnium nanoparticle thin films. Hafnium nanoparticles were grown in vacuum by magnetron-sputtering inert-gas condensation. The as deposited nanoparticles have a hexagonal close-packed crystal structure, they possess truncated hexagonal biprism shape and are prone to surface oxidation when exposed to ambient air forming core–shell Hf/HfO2 structures. Hafnium nanoparticle thin films were formed through energetic nanoparticle deposition. This technique allows for the control of the energy of charged nanoparticles during vacuum deposition. The structural and nanomechanical properties of the nanoparticle thin films were investigated as a function of the kinetic energy of the nanoparticles. The results reveal that by proper adjustment of the nanoparticle energy, hexagonal close-packed porous nanoparticle thin films with good mechanical properties can be formed, without any additional treatment. It is shown that these films can be patterned on the substrate in sub-micrometer dimensions using conventional lithography while their porosity can be well controlled. The fabrication and experimental characterization of hafnium nanoparticles is reported for the first time in the literature.

Synthesis and characterization of earth-abundant Cu2MnSnS4 thin films using a non-toxic solution-based technique

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 84295-84302 ◽  
Author(s):  
Leilei Chen ◽  
Hongmei Deng ◽  
Jiahua Tao ◽  
Huiyi Cao ◽  
Ling Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Spin Coating ◽  
Spin Coating Technique ◽  
Synthesis And Characterization ◽  
Coating Technique ◽  
Earth Abundant ◽  
First Time

Earth-abundant Cu2MnSnS4 (CMTS) thin films were fabricated through a non-toxic spin-coating technique. For the first time we have demonstrated the fabrication of CMTS solar cells with a conversion efficiency of 0.49%, based on this method.

Structural and Ferroelectric Characterization of Uniaxially Oriented Vinylidene Fluoride Oligomer Thin Films

2012 ◽  
Vol 51 ◽  
pp. 04DK05 ◽  
Author(s):  
Yusuke Kuroda ◽  
Yasuko Koshiba ◽  
Masahiro Misaki ◽  
Satoshi Horie ◽  
Kenji Ishida ◽  
...  
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride
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