SiC Power Electronic Devices, MOSFETs and Rectifiers

1999 ◽  
Vol 572 ◽  
Author(s):  
J. A. Cooper ◽  
S-H. Ryu ◽  
Y. LI ◽  
M. Matin ◽  
J. Spitz ◽  
...  
Keyword(s):  
Material Science ◽  
Materials Science ◽  
Electronic Devices ◽  
Commercial Production ◽  
Significant Fraction ◽  
Current Status ◽  
Power Electronic ◽  
Power Switching ◽  
Figures Of Merit ◽  
Switching Devices

ABSTRACTSiC power switching devices have demonstrated performance figures of merit far beyond the silicon theoretical limits, but much work remains before commercial production will be feasible. A significant fraction of the remaining work centers on materials science issues. This paper reviews the current status of unipolar power switching devices in SiC and identifies the major technological and material science barriers that need to be overcome.

GROWTH OF SiC SUBSTRATES

2006 ◽  
Vol 16 (03) ◽  
pp. 751-777 ◽  
Author(s):  
ADRIAN POWELL ◽  
JASON JENNY ◽  
STEPHAN MULLER ◽  
H. McD. HOBGOOD ◽  
VALERI TSVETKOV ◽  
...  
Keyword(s):  
Emerging Markets ◽  
Epitaxial Growth ◽  
High Power ◽  
Significant Fraction ◽  
Current Status ◽  
Microwave Devices ◽  
World Production ◽  
Power Switching ◽  
The World ◽  
The Future

In recent years SiC has metamorphisized from an R&D based materials system to emerge as a key substrate technology for a significant fraction of the world production of green, blue and ultraviolet LEDs. Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices. Applications for heteroepitaxial GaN-based structures on SiC substrates include lasers and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.

Applications Of High Power Electronic Switches In The Electric Power Utility Industry And The Needs For High Power Switching Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
G. T. Heydt ◽  
B. J. Skromme
Keyword(s):  
Electric Power ◽  
High Power ◽  
Electronic Devices ◽  
Power Engineering ◽  
Power Electronic ◽  
Power Utility ◽  
Power Switching ◽  
Electric Power Engineering ◽  
Utility Industry ◽  
Electronic Switches

AbstractThis paper is a review of the main issues relating to power electronic devices as used (or proposed) for the electric power engineering area. Several applications are described. Costs of the devices are discussed. The future of the area is conjectured in terms of the needed breakthroughs in power electronic devices.

16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development

2017 ◽  
Vol 897 ◽  
pp. 583-586
Author(s):  
K.C. Sampayan
Keyword(s):  
High Voltage ◽  
Duty Cycle ◽  
Electronic Devices ◽  
High Repetition Rate ◽  
Mode Switching ◽  
Power Electronic ◽  
Power Switching ◽  
Potential Applications ◽  
Photoconductive Switching ◽  
Current Carrying Capability

A transconductance-like behavior similar to that of junction semiconductor devices is observed in photonically excited wide bandgap (WBG) semi-insulating material without a junction. This property offers the possibility of power electronic devices capable of virtually unlimited voltage and current carrying capability due to intrinsic electrical isolation of the controlling voltage from the switched high voltage. A proof of concept experiment demonstrated the transconductance-like property in burst mode switching to >16 kV, 50% duty cycle, and 75 kHz. Our eventual goal is to combine the light source, optics and the WBG material to form a compact module that is functionally equivalent to junction power electronic devices. In this paper, we present the background, our generalized approach for implementing photoconductive switching for potential applications to high repetition rate (>50 kHz), high voltage (>15 kV) power switching, our associated material measurements, and our path forward to multi-10s of ampere devices.

Current Status of SiC Power Switching Devices: Diodes & GTOs

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Seshadri ◽  
A. K. Agarwall ◽  
W. B. Hall ◽  
S. S. Mani ◽  
M. F. MacMillan ◽  
...  
Keyword(s):  
High Temperature ◽  
Pulse Width ◽  
Current Status ◽  
Process Technology ◽  
Power Switching ◽  
Pwm Inverter ◽  
Pulse Width Modulated ◽  
First Time ◽  
Made In ◽  
Switching Devices

ABSTRACTThe progress that has been made in SiC diodes and GTOs is reviewed. A 100 A/1000 V SiC pi- n diode package, the highest current rating reported for any SiC device, a 69 A conduction/ 11 A turn-off of a SiC GTO and MTOTM, as well as the first all-SiC, 3 phase Pulse Width Modulated (PWM) inverter are reported, herein, for the first time. The inverter achieves voltage controlled turn off with a high temperature capable, hybrid SiC JFET. Material and process technology issues that will need to be addressed before device commercialization can be realized are discussed.

scholarly journals A Cascaded H-Bridge Multilevel Inverter with Reduced Number of Switches

2020 ◽  
Vol 9 (12) ◽  
pp. 344-347
Keyword(s):  
Power Loss ◽  
Current Flow ◽  
Flow Direction ◽  
Multilevel Inverter ◽  
Power Electronic ◽  
Power Switching ◽  
Switching Losses ◽  
Power Switch ◽  
Switching Devices

This paper presents simulation of a 5-level cascaded H-bridge multilevel inverter, with reduce the number of power switching devices in the current flow direction. The propose topology consists of a five switches with double DC sources. The analysis is designing a new topology for a singlephase cascaded multilevel H-bridge inverter (CHBMLI), with a focus on the number of power switching devices in the current flow direction.Conduction and switching losses have to be reduced to achieve higher performance operation of power electronic devices.Multilevel inverters are designed to achieve the desired voltages of output from different DC sources.A analysis of the simulated power loss values is deals with based on how the power switch reduction led to the loss decreases.

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

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