Strain in Coherent Ge Quantum Islands on Si Measured by Transmission Electron Microscopy
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ABSTRACTWe describe a quantitative method for measuring the strain in small islands, and show results for coherent Ge islands on Si. The method uses dark field images from backside thinned samples in the transmission electron microscope. We show that no independent strain models are needed in the measurement, which employs an excellent “abrupt displacement” approximation. Results show that the strain in Ge domes is higher than in pyramids as expected.
1989 ◽
Vol 47
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pp. 444-445
2002 ◽
Vol 8
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pp. 497-501
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1994 ◽
Vol 27
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pp. 762-766
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2004 ◽
Vol 219
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