MBE Grown Planar Doped Barrier Diodes

1999 ◽  
Vol 570 ◽  
Author(s):  
Vo Van Tuyen
Keyword(s):  
Epitaxial Growth ◽  
Potential Barrier ◽  
Doping Concentration ◽  
Layer Growth ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Current Limitation ◽  
Background Doping ◽  
P Type ◽  
Growth Technology

The realization of Planar Doped Barrier Diode (PDBD) presented in this paper starts out from the limits of the MBE layer growth technology. The limitations due to the background doping concentration and the diffusion of the n and p type dopants during the epitaxial growth are considered. The next parameter is the height of the potential barrier. The choice of this value depends on the requirements of the application. It must take into consideration the current transport mechanisms and the current limitation appearing at higher bias levels.

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions

2008 ◽  
Vol 600-603 ◽  
pp. 127-130 ◽  
Author(s):  
Giuseppe Condorelli ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
L.M.S. Perdicaro ◽  
Giuseppe Abbondanza ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Layer Growth ◽  
Low Background ◽  
As Doping ◽  
Background Doping

A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run.

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 219-222 ◽  
Author(s):  
Keiji Wada ◽  
Tsunenobu Kimoto ◽  
Kimito Nishikawa ◽  
Hiroyuki Matsunami
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Growth Conditions ◽  
The Other ◽  
Background Doping ◽  
Site Competition ◽  
Competition Behavior ◽  
Ratio Range

4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor

2015 ◽  
Vol 821-823 ◽  
pp. 165-168 ◽  
Author(s):  
Tobias Höchbauer ◽  
Mario Leitner ◽  
Ronny Kern ◽  
Matthias Künle
Keyword(s):  
Surface Roughness ◽  
Epitaxial Growth ◽  
Layer Thickness ◽  
Doping Concentration ◽  
Batch Reactor ◽  
Growth Processes ◽  
Background Doping ◽  
Very High

We present results on the homo-epitaxial growth on the Si face of 100 mm and 150 mm (0001)-oriented (4° off-orientation) 4H SiC wafers utilizing the horizontal hot-wall batch reactor Probus-SiCTM from Tokyo Electron Limited. Standard epitaxial growth processes show very high levels of intra-wafer, intra-run wafer-to-wafer, and run-to-run uniformities in the layer thickness as well as in the n-type doping concentration. N-type background doping levels less that 5e13 /cm3 have been reached. AFM measurements reveal a surface roughness of 0.2nm (rms). The density of epitaxy related defects such as triangular defects, carrots, and ingrown particles due to downfall are very low, as confirmed by high blocking yields.

Current Transport Mechanisms in N-Type Ultrananocrystalline Diamond/P-Type Si Heterojunctions

2016 ◽  
Vol 16 (12) ◽  
pp. 12749-12753 ◽  
Author(s):  
Abdelrahman Zkria ◽  
Mahmoud Shaban ◽  
Takanori Hanada ◽  
Nathaporn Promros ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Current Transport ◽  
Transport Mechanisms ◽  
Ultrananocrystalline Diamond ◽  
P Type

scholarly journals P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

2005 ◽  
Vol 483-485 ◽  
pp. 633-636 ◽  
Author(s):  
Mihai Lazar ◽  
Christophe Jacquier ◽  
Christiane Dubois ◽  
Christophe Raynaud ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Sheet Resistance ◽  
Doping Concentration ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Substrate Interface ◽  
Selective Epitaxial Growth ◽  
High Doping Concentration ◽  
P Type

Al-Si patterns were formed on n-type 4H-SiC substrate by a photolithographic process including wet Al etching and Si/SiC reactive ion etching (RIE) process. RF 1000°C annealing under C3H8 flow was performed to obtain p+ SiC layers by a Vapour-Liquid-Solid (VLS) process. This method enables to grow layers with different width (up to 800 µm) and various shapes. Nevertheless the remaining Al-based droplets on the largest patterns are indicators of crack defects, going through the p+ layer down to the substrate. SIMS analyses have shown an Al profile with high doping concentration near the surface, high N compensation and Si/C stoechiometry variation between the substrate and the VLS layer. The hydrogen profile follows the Al profile in the VLS layer with an overshoot at the VLS/substrate interface. I-V measurements performed directly on the semiconductor layers have confirmed the formed p-n junction and allowed to measure a sheet resistance of 5.5 kW/ı

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor

2018 ◽  
Vol 924 ◽  
pp. 76-79
Author(s):  
Yong Qiang Sun ◽  
Gan Feng ◽  
Jun Yong Kang ◽  
Wei Ning Qian ◽  
Yi Yang Li ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Mass Production ◽  
Doping Concentration ◽  
Large Diameter ◽  
Layer Growth ◽  
Epitaxial Layers

In this work we report the latest epitaxial growth of 150 mm 4H-SiC on 4° off-axis substrates by a commercial hot-wall reactor. A statistical analysis of more than 300 runs with an epi thickness range of 6μm~15μm shows that the average uniformities of the thickness and the doping concentration are 1.34% (sigma/mean) and 3.90% (sigma/mean), respectively, and the average 2 mm x 2 mm projected device yield is 97.79%. The growths of ~60 μm-thick 150 mm 4H-SiC epitaxial layers have also been carried out. The repeatability of this system for thick epitaxial layer growth has been verified, showing a run-to-run uniformity similar to that of the thin wafers. These results of 150 mm 4H-SiC epitaxial growths indicate that this comercial hot-wall reactor has the potential for mass production of large diameter 4H-SiC epitaxial wafers.

Sign in / Sign up

Export Citation Format

Share Document