Current Transport Mechanisms in N-Type Ultrananocrystalline Diamond/P-Type Si Heterojunctions

2016 ◽  
Vol 16 (12) ◽  
pp. 12749-12753 ◽  
Author(s):  
Abdelrahman Zkria ◽  
Mahmoud Shaban ◽  
Takanori Hanada ◽  
Nathaporn Promros ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Current Transport ◽  
Transport Mechanisms ◽  
Ultrananocrystalline Diamond ◽  
P Type

MBE Grown Planar Doped Barrier Diodes

1999 ◽  
Vol 570 ◽  
Author(s):  
Vo Van Tuyen
Keyword(s):  
Epitaxial Growth ◽  
Potential Barrier ◽  
Doping Concentration ◽  
Layer Growth ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Current Limitation ◽  
Background Doping ◽  
P Type ◽  
Growth Technology

The realization of Planar Doped Barrier Diode (PDBD) presented in this paper starts out from the limits of the MBE layer growth technology. The limitations due to the background doping concentration and the diffusion of the n and p type dopants during the epitaxial growth are considered. The next parameter is the height of the potential barrier. The choice of this value depends on the requirements of the application. It must take into consideration the current transport mechanisms and the current limitation appearing at higher bias levels.

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

scholarly journals Leakage current transport mechanisms of La0.67Sr0.33MnO3/BaTiO3 bilayer films grown on Nb:SrTiO3

2015 ◽  
Vol 38 (3) ◽  
pp. 725-729 ◽  
Author(s):  
PAN RUIKUN ◽  
LIU PANKE ◽  
LI MINGKAI ◽  
TAO HAIZHENG ◽  
LI PAI ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Bilayer Films
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