Martensitic Nucleation in Small ZrO2 Particles

1985 ◽  
Vol 57 ◽  
Author(s):  
I-Wei Chen ◽  
Yi-Hung Chiao

AbstractSmall ZrO2 particles were studied by in-situ transmission electron microscopy and the types of events which led to martensitic nucleation were recorded. These metastable particles were single crystals of several hundred nanometers size and were supported on a carbon thin film but were otherwise free from any constraint. At room temperature, they are more than 1200°C below the equilibrium temperature. After dislocation loops were injected in-situ into the originally defect-free particles, a critical loop size was found beyond which the particle transformed spontaneously. It was also observed that Hertzian contacts between two particles led to martensitic nucleation and spontaneous transformation. These results were satisfactorily rationalized by ab-initio theoretical analysis.

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1431
Author(s):  
Seiichiro Ii ◽  
Takero Enami ◽  
Takahito Ohmura ◽  
Sadahiro Tsurekawa

Transmission electron microscopy in situ straining experiments of Al single crystals with different initial lattice defect densities have been performed. The as-focused ion beam (FIB)-processed pillar sample contained a high density of prismatic dislocation loops with the <111> Burgers vector, while the post-annealed specimen had an almost defect-free microstructure. In both specimens, plastic deformation occurred with repetitive stress drops (∆σ). The stress drops were accompanied by certain dislocation motions, suggesting the dislocation avalanche phenomenon. ∆σ for the as-FIB Al pillar sample was smaller than that for the post-annealed Al sample. This can be considered to be because of the interaction of gliding dislocations with immobile prismatic dislocation loops introduced by the FIB. The reloading process after stress reduction was dominated by elastic behavior because the slope of the load–displacement curve for reloading was close to the Young’s modulus of Al. Microplasticity was observed during the load-recovery process, suggesting that microyielding and a dislocation avalanche repeatedly occurred, leading to intermittent plasticity as an elementary step of macroplastic deformation.


2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.


2016 ◽  
Vol 877 ◽  
pp. 188-193 ◽  
Author(s):  
Li Wei Quan ◽  
Wen Ning Mu ◽  
Lei Kang ◽  
Xiao Ma ◽  
Peng Han ◽  
...  

A precipitation hardenable Al-Cu-Mg alloy was cryorolled with liquid nitrogen followed solution treatment and then aged at 170 ̊C for different time. The microstructure was characterized by optical microscopy (OM) and transmission electron microscopy (TEM). Hardness and tensile strength were also tested. The dislocation loops in the cryorolled alloy are more than the room temperature rolled alloy. Meanwhile the hardness, yield strength and tensile strength are larger than the room temperature rolled alloy.


MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2893-2899 ◽  
Author(s):  
R.W. Harrison ◽  
H. Amari ◽  
G. Greaves ◽  
J.A. Hinks ◽  
S.E. Donnelly

AbstractIn-situ ion irradiation and transmission electron microscopy has been used to examine the effects of the He appm to DPA ratio, temperature and dose on the damage structure of tungsten (W). Irradiations were performed with 15 or 60 keV He+ ions, achieving He-appm/displacements per atom (DPA) ratios of ∼40,000 and ∼2000, respectively, at temperatures between 500 and 1000°C to a dose of ∼3 DPA. A high number of small dislocation loops with sizes around 5–20 nm and a He bubble lattice were observed for both He-appm/DPA ratios at 500°C with a bubble size ∼1.5 nm. Using the g.b=0 criterion the loops were characterised as b = ±1/2<111> type. At 750°C bubbles do not form an ordered array and are larger in size compared to the irradiations at 500°C, with a diameter of ∼3 nm. Fewer dislocation loops were observed at this temperature and were also characterised to be b = ±1/2<111> type. At 1000°C, no dislocation loops were observed and bubbles grew as a function of fluence attributed to vacancy mobility being higher and vacancy clusters becoming mobile.


2012 ◽  
Vol 717-720 ◽  
pp. 845-848 ◽  
Author(s):  
Alexia Drevin-Bazin ◽  
Jean François Barbot ◽  
Thierry Cabioc’h ◽  
Marie France Beaufort

In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal annealing at 1000°C in Ar atmosphere were performed to allow interdiffusion processes. X-ray diffraction and High Resolution Transmission Electron Microscopy reveal that a Ti3SiC2 contact, in perfect epitaxy with 4H-SiC substrate, is so-obtained. In situ annealing experiment underlines the evolution of Ti-Al contact microstructure versus temperature. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700°C.


2014 ◽  
Vol 215 ◽  
pp. 144-149 ◽  
Author(s):  
Sergey M. Zharkov ◽  
Roman R. Altunin ◽  
Evgeny T. Moiseenko ◽  
Galina M. Zeer ◽  
Sergey N. Varnakov ◽  
...  

Solid-state reaction processes in Fe/Si multilayer nanofilms have been studied in situ by the methods of transmission electron microscopy and electron diffraction in the process of heating from room temperature up to 900ºС at a heating rate of 8-10ºС/min. The solid-state reaction between the nanolayers of iron and silicon has been established to begin at 350-450ºС increasing with the thickness of the iron layer.


2000 ◽  
Vol 15 (4) ◽  
pp. 1025-1032 ◽  
Author(s):  
P. H. Boldt ◽  
G. C. Weatherly ◽  
J. D. Embury

Transmission electron microscopy and electron diffraction were used to study hardness indentations made at room temperature in ⟨001⟩-oriented single crystals of MoSi2. Two families of slip systems, {110}⟨001⟩ and {101}⟨010⟩, were identified. The first system formed ⟨001⟩ dislocation loops by prismatic punching beneath the indenter, while the second system led to large rotations of the crystal lattice beneath the indenter. The lattice rotations were used to estimate the density of dislocations stored in this volume. The results demonstrate that the hardness response of MoSi2 can be explained by the expanding cavity model with most of the plastic accommodation occurring immediately beneath the indenter.


1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.


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