Real-Time Spectroscopic Ellipsometry Study of the Thermal Cleaning Process for Silicon Epitaxial Growth by UHV-CVD

1999 ◽  
Vol 569 ◽  
Author(s):  
K. Nozawa ◽  
K. Katayama ◽  
Y. Kanzawa ◽  
Q. Sugahara ◽  
T. Saitoh ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Decomposition Process ◽  
Ultra High Vacuum ◽  
Cleaning Process ◽  
Thermal Cleaning ◽  
Oxide Decomposition

ABSTRACTReal-time spectroscopic ellipsometry (RTSE) method was applied to study thermal cleaning process of silicon surfaces for epitaxial growth by ultra-high vacuum chemical vapor deposition (UHV-CVD). For the first time, in-situ observation of oxide decomposition process under Si2H6 ambience was carried out. The substrates with thin oxide formed by wet chemical treatment were heated up by infrared heater under UHV or under Si2H6 ambience in an UHV-CVD chamber and the oxide decomposition processes were observed by RTSE. Ellipsometric parameters Psi and Delta increase with the progress of oxide decomposition process and become constant with the completion of the decomposition. It was found that the oxide decomposition process consists of two phases and rate-determing processes are different in each phase. It was also found that Si2H6 lowers the activation energies of oxide decomposition process in each phase.

Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen

1993 ◽  
Vol 334 ◽  
Author(s):  
Katherine E. Violette ◽  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Dennis M. Maher
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Strong Dependence ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition

AbstractSilicon nucleation on silicon dioxide and selective silicon epitaxial growth (SEG) were studied in an ultra high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) reactor. Experiments were performed using 10% Si2H6 in H2 in a pressure range of 10 - 100 mTorr at 760°C. Under these conditions, the growth rate ranged from 75 to 330 nm/minute. Loss of selectivity via Si island formation on SiO2 was studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealing a strong dependence on deposition pressure. Cross sectional transmission electron microscopy (XTEM) was employed to study the vertical oxide/epitaxy interface where faceting can occur. The incubation time for nucleation was found to increase from 10s to 70s as pressure is reduced from 100 mTorr to 10 mTorr, allowing thicker selective epitaxial film growth in spite of the reduced growth rates. This was attributed to the reduction in gas phase supersaturation of the Si containing species resulting in a lower density of adsorbed atoms on the SiO2 surface. This process shows a potential for chlorine free selective epitaxial growth and provides insight to the surface morphology of polycrystalline films deposited at low pressures.

Real-Time Feedback Control of Thermal CL2 Etching of GaAs Based on In-Situ Spectroscopic Ellipsometry

1997 ◽  
Vol 502 ◽  
Author(s):  
T. Parent ◽  
R. Heitz ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Etch Rate ◽  
Control Algorithm ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Square Root ◽  
Arrhenius Dependence ◽  
Etching System

ABSTRACTIn-situ, real-time, spectroscopic ellipsometry (SE) is utilized to study thermal chlorine etching of GaAs in an all ultra-high-vacuum interconnected growth and etching system. In the low temperature (between ˜40°C and ˜120°C) range, the etch rate is found to exhibit an Arrhenius dependence on substrate temperature with an activation energy of 11.6Kcal/mole and to be proportional to essentially the square root of the chlorine pressure. An SE feedback based real-time etch process control algorithm is developed and successfully implemented on the basis of the above noted input - output relation derived from the experimental data base.

Sub-Half Micron Elevated SourceDrain NMOSFETS by Low Temperature Selective Epitaxial Deposition

1996 ◽  
Vol 429 ◽  
Author(s):  
J. Sun ◽  
R. F. Bartholomew ◽  
K. Bellur ◽  
P. A. O'Neil ◽  
A. Srivastava ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Growth ◽  
Deposition Process ◽  
Deep Submicron ◽  
Ultra High Vacuum ◽  
Gas Source ◽  
Drain Bias

AbstractIn this paper we report the first NMOSFETs with elevated S/D selectively deposited by ultra high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD). The deposition process included an in-situ vacuum prebake (750 °C for 10 sec) followed by selective epitaxial growth (SEG) at 800 °C. Si2H6 was used as the silicon gas source instead of the more commonly used SiH4 and SiH2Cl2 in order to achieve high growth rates at low pressure. To prevent nucleation from occurring on insulator surfaces during growth, an etching mechanism was introduced by the addition of Cl2. The gases included 100 sccm of 10% Si2H6 in H2 and 2 sccm of Cl2 at a process pressure of 24 mTorr. An epitaxial growth rate of 160 nm/min has been achieved. The final epi thickness was around 0.1 μm. The S/D junctions were formed via ion implantation into the epi. The subsequent RTA (10 sec at 950 °C) resulted in an effective junction depth about 75 nm beneath the starting Si substrate. Process and device simulations reveal the importance of maintaining a shallow LDD junction for deep submicron devices by using low temperature selective deposition. MOSFETs exhibit good subthreshold characteristics with subthreshold swing of 86 mV/dec at a drain bias of 2.5 V, and threshold variations due to charge sharing and drain-induced-barrierlowering (DIBL) were moderate for Leff down to 0.35 μm. The gate-induced junction leakage current is below 2 pA/μm at a bias of 2.5 V.

Challenge to 200 mm 3C-SiC Wafers Using SOI

2005 ◽  
Vol 483-485 ◽  
pp. 205-208 ◽  
Author(s):  
Motoi Nakao ◽  
Hirofumi Iikawa ◽  
Katsutoshi Izumi ◽  
Takashi Yokoyama ◽  
Sumio Kobayashi
Keyword(s):  
Cross Section ◽  
Vapor Deposition ◽  
Seed Layer ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Average Thickness ◽  
Entire Region ◽  
Transmission Electron ◽  
Good Crystallinity

200 mm wafer with 3C-SiC/SiO2/Si structure has been fabricated using 200 mm siliconon- insulator (SOI) wafer. A top Si layer of 200 mm SOI wafer was thinned down to approximately 5 nm by sacrificial oxidization, and the ultrathin top Si layer was metamorphosed into a 3C-SiC seed layer using a carbonization process. Afterward, an epitaxial SiC layer was grown on the SiC seed layer with ultra-high vacuum chemical vapor deposition. A cross-section transmission electron microscope indicated that a 3C-SiC seed layer was formed directly on the buried oxide layer of 200 mm wafer. The epitaxial SiC layer with an average thickness of approximately 100 nm on the seed was recognized over the entire region of the wafer, although thickness uniformity of the epitaxial SiC layer was not as good as that of SiC seed layer. A transmission electron diffraction image of the epitaxial SiC layer showed a monocrystalline 3C-SiC(100) layer with good crystallinity. These results indicate that our method enables to realize 200 mm SiC wafers.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum
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