Shallow Boron Implant Activation

1999 ◽  
Vol 568 ◽  
Author(s):  
A. T. Fiory ◽  
K. K. Bourdelle ◽  
A. Agarwal ◽  
H.-J. Gossmann ◽  
C. S. Rafferty
Keyword(s):  
Sheet Resistance ◽  
Electrical Transport ◽  
Annealing Temperature ◽  
Surface Oxidation ◽  
Heating Rates ◽  
Dopant Activation ◽  
Practical Temperature ◽  
Spike Annealing ◽  
And Diffusion ◽  
Secondary Ion

ABSTRACTBoron was implanted into n-type Si at energies from 500 eV to 1 keV and doses near 1 E14 cm-2and 1E51 cm−2. Electrical activation was achieved by rapid thermal annealing (RTA) in nominally pure N−2and 0.1% 02 with the fastest available heating rates of up to 150 °C/s, cooling rates up to 80 °C/s, and included “spike” anneals with minimum dwell time at peak temperature. Measurements of sheet resistance, Hall coefficient, and secondary ion mass spectroscopy profiling were used to determine dopant activation and diffusion. Surface oxidation was studied by film thickness ellipsometry. Analyses of electrical transport measurements are used to relate junction depths to sheet resistance and their dependence on annealing temperature and time. For spike annealing, junction leakage and adequate activation limits the minimum practical temperature while diffusion limits the maximum practical temperature for formation of shallow junctions.

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

2010 ◽  
Vol 645-648 ◽  
pp. 717-720 ◽  
Author(s):  
Laurent Ottaviani ◽  
Stéphane Biondo ◽  
Stéphane Morata ◽  
Olivier Palais ◽  
Thierry Sauvage ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Annealing Temperature ◽  
Sample Volume ◽  
Electrical Activation ◽  
Electrical Measurements ◽  
Dopant Activation ◽  
Heating And Cooling ◽  
Heating Up ◽  
Crystal Volume ◽  
Post Implantation

We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied. A higher heating-rate was found to preserve the rms roughness for annealing temperatures lower than 1700°C, and to improve the sheet resistance whatever the annealing temperature due to a better dopant activation (except for 1600°C process, which induced a dark zone in the sample volume). A complete activation was calculated for an annealing at 1700°C during 30 minutes, with a ramp-up at 20°C/s. Rising the cooling-down rate appeared to increase the sheet resistance, probably due to a higher concentration of point defects in the implanted layer.

Rapid Thermal Annealing of Ion Implanted p-n Junction in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
C. Ho ◽  
R. Kwor ◽  
C. Araujo ◽  
J. Gelpey
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dwell Time ◽  
Annealing Temperature ◽  
Current Analysis ◽  
Junction Depth ◽  
Leakage Currents ◽  
Dopant Activation ◽  
Secondary Ion

ABSTRACTThe rapid thermal annealing (RTA) of p+n and n+p diodes, fabricated by the LOCOS process, and its subsequent effects on junction leakage current, junction depth and dopant activation were investigated. The reverse bias diode leakage currents of implanted Si <100> samples (As+: 60 KeY, 5×1014 5×1015 cm−2, B+: 25 KeV, l×1014, l×1015 cm−2 and BF2+: 45 KeV, 1×1015cm−2 ) were measured as functions of annealing temperature, and dwell time. The annealing was performed using an Eaton RTA system (Nova ROA-400) at temperatures ranging from 950 °C to 1150 °C. Annealing times ranged from 0.2 sec. to 10 sec. The results from the diode leakage current analysis are correlated with those from Secondary Ion Mass Spectroscopy (SIMS) and differential Hall measurements. The reverse-biased leakage currents from the RTA-treated samples are compared with those from furnace-annealed samples.

Phosphorus and Boron Implantation into (100) Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Y. S. Suh ◽  
M. S. Carroll ◽  
R. A. Levy ◽  
A. Sahiner ◽  
C. A. King
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Dopant Activation ◽  
Entire Energy Range ◽  
Entire Energy ◽  
Boron Implantation ◽  
Pearson Distributions ◽  
P Type ◽  
First Four Moments ◽  
And Diffusion ◽  
Secondary Ion

ABSTRACTBoron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm−2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

Issues and Optimization of Millisecond Anneal Process for 45 nm node and beyond

2006 ◽  
Vol 912 ◽  
Author(s):  
Kanna Adachi ◽  
Kazuya Ohuchi ◽  
Nobutoshi Aoki ◽  
Hideji Tsujii ◽  
Takayuki Ito ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Leakage Current ◽  
Flash Lamp ◽  
Gate Leakage Current ◽  
Junction Depth ◽  
Gate Leakage ◽  
Dopant Activation ◽  
Similar Relation ◽  
Device Integration ◽  
Spike Annealing

AbstractWe have investigated MSA, namely, Laser Spike Annealing (LSA) and Flash Lamp Annealing (FLA), dopant activation technology of source/drain extension for 45 nm node, which can be substituted for spike RTA. Since it is possible to achieve a similar relation between a sheet resistance and a junction depth by using either FLA or LSA, both annealing methods are capable of providing the junction characteristics required by the ITRS target. However, we have noticed that there are three crucial issues from the viewpoints of device integration and CMOSFET performance: junction leakage current, gate leakage current and pattern dependence. In this report, we discuss these issues and indicate how to cope with them.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

scholarly journals Investigation of Spin-on Dopants and Curing Temperature Effect on Dopant Activation

2019 ◽  
Vol 11 (4) ◽  
pp. 11
Author(s):  
Bhavink Patel ◽  
Martin Saporito ◽  
Runye Cui ◽  
Khaled Malallah ◽  
Mohammad Alsubaiei ◽  
...  
Keyword(s):  
Temperature Effect ◽  
Sheet Resistance ◽  
Measurement Method ◽  
Probe Measurement ◽  
Curing Temperature ◽  
Silicon Substrates ◽  
Dopant Activation ◽  
Baking Process

Spin-on dopant technique has been investigated in the paper. The boron and phosphorus were used as p- and n-type dopant sources and were deposited on silicon substrates, followed by the baking process to evaporate the solvents from spin-on dopant layers. The standard drive-in process was applied to diffuse and activate the dopants. The curing temperature varied from 150 to 200 oC to investigate the temperature effect on dopant activation. It is suggested that for our selected spin-on dopant sources, the curing temperature and time of 175 oC and 60 minutes would lead to the best result of dopant activation during drive-in process, evidenced by the lowest sheet resistance, which was measured using four-point probe measurement method.&nbsp;

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