The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
H. Yang ◽  
H Niimi ◽  
Y. Wu ◽  
G. Lucovsky
Keyword(s):  
Barrier Layer ◽  
Gate Dielectrics ◽  
Layer Model ◽  
Equivalent Thickness ◽  
Model Based ◽  
Direct Tunneling ◽  
Tunneling Currents ◽  
Nordheim Tunneling

ABSTRACTMesarjian et al. were the first to recognize the effects of suboxide interfacial transition regions at Si-SiO2 interfaces on tunneling oscillations in the Fowler-Nordheim regime. This paper extends these ideas to the direct tunneling regime and focuses on differences in interfacial transition regions between Si-SO2 interfaces with, and without monolayer level interface nitridation. Tunneling currents in both the direct and Fowler-Nordheim tunneling regimes are reduced by monolayer level interface nitridation for PMOS and NMOS devices with the same oxide-equivalent thickness. This paper develops a modified barrier layer model based on analysis of XPS results that accounts for these reductions in current in the direct tunneling regime.

Microroughness at the Si/SiO2 Interface from Pre-Oxidation Annealing, Measured Using Quantum Oscillations in Fowler-Nordheim Tunneling Currents

1992 ◽  
Vol 280 ◽  
Author(s):  
J. C. Poler ◽  
K. K. McKay ◽  
E. A. Irene
Keyword(s):  
Gate Dielectrics ◽  
Interface Roughness ◽  
Quantum Oscillation ◽  
Interfacial Region ◽  
Mos Capacitors ◽  
Quantum Oscillations ◽  
High Temperature Anneal ◽  
Afm Imaging ◽  
Tunneling Currents ◽  
Nordheim Tunneling

ABSTRACTAs design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structures are required to be scaled to even thinner proportions. Upon scaling the gate oxides below ∼60Å some properties of the device, such as interface roughness, that are negligible for thicker films become critical and must be evaluated. Microroughness at the interface of ultrathin MOS capacitors has been shown to degrade these devices.We are studying the interfacial region of ∼50Å SiO2 on Si using the quantum oscillations in Fowler-Nordheim tunneling currents. The oscillations are sensitive to the electron potential and abruptness of the film and its interfaces. In particular, inelastic scattering and/or thickness inhomogeneities in the film will reduce the amplitude of the oscillations. We are using the amplitude of the oscillations to examine the degree of microroughness at the interface that results from a pre-oxidation high temperature anneal in an inert ambient containing various amounts of H2O. Preliminary AFM imaging has shown correlations supporting our microroughness interpretation of the quantum oscillation amplitudes.

Pre-Oxidation Anneal Kinetics: Interface Degradation of Thin SIO2 Films on Silicon

1992 ◽  
Vol 259 ◽  
Author(s):  
J.C. Poler ◽  
E.A. Irene
Keyword(s):  
High Temperature ◽  
Water Content ◽  
Time Scale ◽  
Dielectric Breakdown ◽  
Electrical Measurements ◽  
Sio2 Films ◽  
Direct Tunneling ◽  
High Temperature Anneal ◽  
Tunneling Currents ◽  
Nordheim Tunneling

ABSTRACTThe high temperature anneal of hydrogen terminated silicon has been shown to etch and roughen its surface. We attempt to describe the degree of this roughness and the time scale on which it occurs using several electrical measurements: excess direct tunneling currents, dielectric breakdown and the oscillations in the Fowler-Nordheim tunneling currents. From these results we draw conclusions on the time and water content dependence of pre-oxidation annealing on the microroughness of the Si/SiO2 interface.

Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions

1985 ◽  
Vol 28 (7) ◽  
pp. 717-720 ◽  
Author(s):  
Y. Nissan-Cohen ◽  
J. Shappir ◽  
D. Frohman-Bentchkowsky
Keyword(s):  
Charge Trapping ◽  
Tunneling Currents ◽  
Mos Structures ◽  
Nordheim Tunneling

Electron transport properties of Si nanosheets: Transition from direct tunneling to Fowler-Nordheim tunneling

2011 ◽  
Vol 99 (2) ◽  
pp. 023107 ◽  
Author(s):  
Takashi Ikuno ◽  
Hirotaka Okamoto ◽  
Yusuke Sugiyama ◽  
Hideyuki Nakano ◽  
Fumihiko Yamada ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Direct Tunneling ◽  
Electron Transport Properties ◽  
Nordheim Tunneling

Nanoscale metal transistor control of Fowler–Nordheim tunneling currents through 16 nm insulating channel

1999 ◽  
Vol 85 (9) ◽  
pp. 6912-6916 ◽  
Author(s):  
Kouji Fujimaru ◽  
Ryouta Sasajima ◽  
Hideki Matsumura
Keyword(s):  
Tunneling Currents ◽  
Nordheim Tunneling
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