In Situ Plasma Analysis, Fluorine Incorporation, Thermostability, Stress, and Hardness Comparison of Fluorinated Amorphous Carbon and Hydrogenated Amorphous Carbon Thin Films Deposited on Si by Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 565 ◽  
Author(s):  
A. D. Glew ◽  
M. A. Cappelli ◽  
M. N. Touzelbaev ◽  
Y. Hu
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Film Stress ◽  
In Situ Observation ◽  
Plasma Properties ◽  
Thin Film Stress ◽  
The Relationship ◽  
Amorphous Hydrogenated Carbon

AbstractIn situ observation of the plasma properties during deposition of fluorinated amorphous hydrogenated carbon (FLAC) and unfluorinated amorphous hydrogenated carbon are performed. The relationship between film properties and impinging ion energy and incident ion momentum is discussed within the framework of existing models of diamond-like carbon (DLC) formation. The DLC films are deposited in a low pressure radio frequency discharge operating at 13.57 MHz with methane and carbon tetra-fluoride as the source gases. Thermostability, stress, and mechanical properties are investigated. The films are elevated to 400 degrees C in order to investigate thermostability. Thin film stress and nano-hardness are also studied. The film density is investigated by gravimetric methods. The fluorinated film stoichiometry is explored with x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.

Preparation and Characterization of Chromium Containing amorphous Hydrogenated Carbon Films (A-C:H/Cr)

1995 ◽  
Vol 388 ◽  
Author(s):  
R. Gampp ◽  
P. Gantenbein ◽  
P. Oelhafen
Keyword(s):  
Chromium Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Amorphous Hydrogenated Carbon ◽  
High Chemical Stability

AbstractChromium containing amorphous hydrogenated carbon films (a-C:H/Cr) were prepared in a process that combines rf plasma activated chemical vapor deposition of methane and magnetron sputtering of a chromium target. During the deposition the silicon substrates were kept at 200°C and dc biased at -200 V in order to obtain films with high chemical stability which is required for the application as solar selective surfaces. the films with different Cr concentrations (5 to 49 at.%) were characterized by in situ x-ray photoelectron spectroscopy (XPS). Up to 40 at.%, chromium proves to be built into the cermet-like films in the form of chromium carbide clusters. above 40 at.%, chromium is partly metallic. a modification of the a-C:H matrix in the vicinity of the chromium carbide clusters has been observed.

scholarly journals Changing Contents of Carbon Hybridizations in Amorphous Hydrogenated Carbon Layers (a-C:H) on Sustainable Polyhydroxybutyrate (PHB) Exhibit a Significant Deterioration in Stability, Depending on Thickness

2019 ◽  
Vol 5 (3) ◽  
pp. 52 ◽  
Author(s):  
Torben Schlebrowski ◽  
Lucas Beucher ◽  
Hadi Bazzi ◽  
Barbara Hahn ◽  
Stefan Wehner ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Raw Materials ◽  
Chemical Vapor ◽  
Drift Spectroscopy ◽  
Significant Deterioration ◽  
X Ray ◽  
Diffuse Reflectance Infrared ◽  
X Ray Absorption ◽  
Amorphous Hydrogenated Carbon

PHB is a biodegradable polymer based on renewable raw materials that could replace synthetic polymers in many applications. A big advantage is the resulting reduction of the waste problem, as well as the conservation of fossil resources. To arrange it for various applications, the surface is arranged by plasma-enhanced chemical vapor deposition (PECVD) with amorphous hydrogenated carbon layers (a-C:H). Here, on a 50 µm thick PHB-foil, a-C:H layers of different thicknesses (0–500 nm) were deposited in 50 nm steps. Surface topography was investigated by scanning electron microscopy (SEM), chemical composition by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy and wettability checked by contact angle. In addition, layers were examined by synchrotron supported X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS), which revealed thickness dependent changes of the sp2/sp3 ratio. With increasing thickness, even the topography changes show internal, stress-induced phenomena. The results obtained provide a more detailed understanding of the predominantly inorganic a-C:H coatings on (bio)polymers via in situ growth.

In Situ Observation of Nucleation and Growth of Carbon Nanotubes from Iron Carbide Nanoparticles

2008 ◽  
Vol 1142 ◽  
Author(s):  
Hideto Yoshida ◽  
Seiji Takeda ◽  
Tetsuya Uchiyama ◽  
Hideo Kohno ◽  
Yoshikazu Homma
Keyword(s):  
Carbon Nanotubes ◽  
Iron Carbide ◽  
Bulk Diffusion ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Atomic Scale ◽  
In Situ Observation ◽  
Transmission Electron ◽  
Cvd Growth

ABSTRACTNucleation and growth processes of carbon nanotubes (CNTs) in iron catalyzed chemical vapor deposition (CVD) have been observed by means of in-situ environmental transmission electron microscopy. Our atomic scale observations demonstrate that solid state iron carbide (Fe3C) nanoparticles act as catalyst for the CVD growth of CNTs. Iron carbide nanoparticles are structurally fluctuated in CVD condition. Growth of CNTs can be simply explained by bulk diffusion of carbon atoms since nanoparticles are carbide.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Investigation of the Cracking Behaviors by Indentation Based on an In Situ Observation

2014 ◽  
Vol 627 ◽  
pp. 361-364 ◽  
Author(s):  
Yasuhiro Yamazaki
Keyword(s):  
Indentation Test ◽  
Crack Size ◽  
Indentation Load ◽  
In Situ Measurement ◽  
Observation System ◽  
In Situ Observation ◽  
Test Machine ◽  
Transparent Ceramics ◽  
The Relationship

In this paper, an in-situ measurement of crack size as a function of applied indentation load during indentation test was conducted. To perform the in-situ measurement, an instrumented indentation test machine with the in-situ observation system was developed and used. The joints of transparent ceramics by diffusion bonding were prepared as the specimen used in this study. The indentations were performed at the interface of the joints, and in the monolithic transparent ceramics by means of the instrumented indenter with the in-situ observation system. The relationship between crack shape and indentation load, as well as, the effect of the indenter shape on it were discussed.

scholarly journals Measurements Of Stress Evolution During Thin Film Deposition

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Radius Of Curvature ◽  
Stress Evolution ◽  
Rectangular Array ◽  
Thin Film Stress ◽  
Ccd Detector

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

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