Multilevel Damascene Interconnection in Integration of MOCVD Cu and Low-k Fluorinated Amorphous Carbon

1999 ◽  
Vol 565 ◽  
Author(s):  
Hongning Yang ◽  
David R. Evans ◽  
Tue Nguyen ◽  
Lisa H. Stecker ◽  
Bruce Ulrich ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Thin Layer ◽  
Amorphous Carbon ◽  
Plasma Etching ◽  
Electrical Performance ◽  
Integration Process ◽  
Adhesion Promoter ◽  
Multi Level ◽  
Low K

AbstractIn this paper, we present studies on the integration process of CVD Cu with low-k fluorinated amorphous carbon (a-F:C) in single level and multilevel damascene structure. A thin layer of adhesion promoter material, SiC:H, was utilized to enhance the adhesion and mechanical properties of the damascene stacking layers. The SiC:H layer could also serve as a barrier to contain fluorine atoms from diffusion. The improved a-F:C damascene stacking layers are able to sustain the process of CMP, heat treatment, patterning and plasma etching. The fabrication of single and multi-level damascene structures is proved to be feasible. Some of the electrical performance data evaluated on the Cu/a-F:C damascene structure will be also presented in this paper.

The Study of Fluorinated Amorphous Carbon as Low-K Dielectric Material and its Interface with Copper Metallization

1999 ◽  
Vol 565 ◽  
Author(s):  
N. Ariel ◽  
M. Eizenberg ◽  
E. Y. Tzou
Keyword(s):  
Amorphous Carbon ◽  
Nuclear Reactions ◽  
Dielectric Material ◽  
Copper Metallization ◽  
Limiting Factor ◽  
Adhesion Promoter ◽  
Adhesion Promotion ◽  
High Resolution Tem ◽  
Rc Delay ◽  
Low K

AbstractIn order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k<3) as dielectrics.Fluorinated amorphous carbon (a-F:C) prepared by HDP- CVD is an attractive candidate as a low-k material. In this work we have studied the film, its stability and its interface with Copper metallization. The high density plasma CVD process resulted in a film which contains C and F at a ratio of 1:0.6 as determined by Nuclear Reactions Analysis. XPS analysis of the Cls transition indicated four types of bonds: C-C, C-CF, CF, and CF2. X-ray diffraction as well as high resolution TEM analyses proved that the film was amorphous at least up to 500°C anneal. For various applications, the advantage of adding a thin bi-layer of a-SiC/SiOx for adhesion promotion purposes was demonstrated. In addition, the interface of a-F:C and the adhesion promoter layer with Ta, TaN and Cu was studied. No interdiffusion was observed by SIMS after 400°C annealing. 500°C annealing caused F outdiffusion from the film and Cu diffusion into the adhesion promoter layer.

The Study of Fluorinated Amorphous Carbon as Low-K Dielectric Material and its Interface with Copper Metallization

1999 ◽  
Vol 564 ◽  
Author(s):  
N. Ariel ◽  
M. Eizenberg ◽  
E. Y. Tzou
Keyword(s):  
Amorphous Carbon ◽  
Nuclear Reactions ◽  
Dielectric Material ◽  
Copper Metallization ◽  
Limiting Factor ◽  
Adhesion Promoter ◽  
Adhesion Promotion ◽  
High Resolution Tem ◽  
Rc Delay ◽  
Low K

AbstractIn order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k<3) as dielectrics.Fluorinated amorphous carbon (a-F:C) prepared by HDP- CVD is an attractive candidate as a low-k material. In this work we have studied the film, its stability and its interface with Copper metallization. The high density plasma CVD process resulted in a film which contains C and F at a ratio of 1:0.6 as determined by Nuclear Reactions Analysis. XPS analysis of the C Is transition indicated four types of bonds: C-C, C-CF, CF, and CF2. X-ray diffraction as well as high resolution TEM analyses proved that the film was amorphous at least up to 500°C anneal. For various applications, the advantage of adding a thin bi-layer of a-SiC/SiOx for adhesion promotion purposes was demonstrated. In addition, the interface of a-F:C and the adhesion promoter layer with Ta, TaN and Cu was studied. No interdiffusion was observed by SIMS after 400°C annealing. 500°C annealing caused F outdiffusion from the film and Cu diffusion into the adhesion promoter layer.

Numerical Analysis of Packaging-Induced Failures in Cu/Low-k Interconnects

2008 ◽  
Vol 1079 ◽  
Author(s):  
Aditya Pradeep Karmarkar ◽  
Xiaopeng Xu ◽  
Xiao Lin ◽  
Greg Rollins ◽  
Victor Moroz ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Mechanical Stresses ◽  
Copper Interconnects ◽  
Circuit Performance ◽  
Packaging Process ◽  
Interconnect Reliability ◽  
Multi Level ◽  
The Impact ◽  
Low K ◽  
Package Reliability

ABSTRACTWith decreasing feature sizes for every technology node, multi-level metallization schemes that employ copper interconnects and low-k dielectrics are required to achieve the requisite circuit performance. Here, the effects of the mechanical stresses originating from the packaging process on Cu/Low-k interconnects are assessed. The impact of package defects on interconnect reliability is also analyzed. It is seen that the package reliability varies with underfill mechanical properties. The packaging process introduces global level stresses that propagate to the local, i.e. interconnect, level. Moreover, the package defects also have an adverse impact on the mechanical stresses in the metallization structure. The package defects alter the mechanical stresses in the metal lines and affect the reliability. The complex interaction between packaging process induced stresses, package level defects and mechanical properties of various materials is analyzed in order to create robust interconnect designs.

Crystallization of MgO • Al2 • SiO2 • ZrO2 glasses

1986 ◽  
Vol 44 ◽  
pp. 440-441
Author(s):  
M. A. McCoy
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Powder Processing ◽  
Glass Composition ◽  
Ceramic Powder ◽  
Transformation Toughening ◽  
Ceramic Powder Processing ◽  
Processing Techniques ◽  
Ceramic Matrices

Transformation toughening by ZrO2 inclusions in various ceramic matrices has led to improved mechanical properties in these materials. Although the processing of these materials usually involves standard ceramic powder processing techniques, an alternate method of producing ZrO2 particles involves the devtrification of a ZrO2-containing glass. In this study the effects of glass composition (ZrO2 concentration) and heat treatment on the morphology of the crystallization products in a MgO•Al2•SiO2•ZrO2 glass was investigated.

INFLUENCE THE QUENCHING AND TEMPERING ON THE MICROSTRUCTURE, MECHANICAL PROPERTIES AND SURFACE ROUGHNESS, OF MEDIUM CARBON STEEL

2018 ◽  
Vol 18 (1) ◽  
pp. 125-135
Author(s):  
Sattar H A Alfatlawi
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Surface Roughness ◽  
Carbon Steel ◽  
Cold Water ◽  
Medium Carbon Steel ◽  
Medium Carbon ◽  
Heating And Cooling ◽  
Treatment Processes ◽  
Quenching And Tempering

One of ways to improve properties of materials without changing the product shape toobtain the desired engineering applications is heating and cooling under effect of controlledsequence of heat treatment. The main aim of this study was to investigate the effect ofheating and cooling on the surface roughness, microstructure and some selected propertiessuch as the hardness and impact strength of Medium Carbon Steel which treated at differenttypes of heat treatment processes. Heat treatment achieved in this work was respectively,heating, quenching and tempering. The specimens were heated to 850°C and left for 45minutes inside the furnace as a holding time at that temperature, then quenching process wasperformed in four types of quenching media (still air, cold water (2°C), oil and polymersolution), respectively. Thereafter, the samples were tempered at 200°C, 400°C, and 600°Cwith one hour as a soaking time for each temperature, then were all cooled by still air. Whenthe heat treatment process was completed, the surface roughness, hardness, impact strengthand microstructure tests were performed. The results showed a change and clearimprovement of surface roughness, mechanical properties and microstructure afterquenching was achieved, as well as the change that took place due to the increasingtoughness and ductility by reducing of brittleness of samples.

Influence of the Parameters of Induction Heat Treatment on the Mechanical Properties of 50CrMo4

2019 ◽  
Vol 74 (6) ◽  
pp. 366-379 ◽  
Author(s):  
V. Jászfi ◽  
P. Prevedel ◽  
A. Eggbauer ◽  
Y. Godai ◽  
P. Raninger ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Induction Heat ◽  
Induction Heat Treatment

CONDULOY

Alloy Digest ◽  
1953 ◽  
Vol 2 (10) ◽  
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Physical Properties ◽  
Tensile Properties ◽  
Copper Alloy ◽  
Heat Treating ◽  
Age Hardening ◽  
Beryllium Copper ◽  
Hardening Heat Treatment

Abstract CONDULOY is a low beryllium-copper alloy containing about 1.5% nickel. It responds to age-hardening heat treatment for improved mechanical properties. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on casting, heat treating, machining, and joining. Filing Code: Cu-11. Producer or source: Brush Beryllium Company.

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