Effect of Nitrogen Content on Interfacial Adhesion of the Ta/SiO2Interface

1999 ◽  
Vol 564 ◽  
Author(s):  
Michael Lane ◽  
Reiner Dauskardt ◽  
Nety Krishna ◽  
Imran Hashim
Keyword(s):  
Quantitative Data ◽  
Interfacial Adhesion ◽  
Silicon Oxide ◽  
Interface Fracture ◽  
Copper Metallization ◽  
Interfacial Chemistry ◽  
Adhesive Properties ◽  
Barrier Layers ◽  
Nitrogen Contents ◽  
Diffusion Properties

AbstractWith the advent of copper metallization in interconnect structures, new barrier layers are required to prevent copper diffusion into the adjacent dielectrics as well as the underlying silicon. These barriers must not only prevent interdiffusion but also provide adequate adhesion to both the dielectric and copper. Ta and TaN have received considerable attention as barrier layers in copper metallization schemes. While much has been reported on their diffusion properties, little or no quantitative data exists on their adhesive properties. We present data on both the interface fracture energy and the subcritical debonding of ionmetal- plasma sputtered Ta and TaN films on thermal silicon oxide. Data is also presented showing the significant effect of interfacial chemistry, particularly varying nitrogen contents at the TaN/SiO2interface.

Adhesion and reliability of copper interconnects with Ta and TaN barrier layers

2000 ◽  
Vol 15 (1) ◽  
pp. 203-211 ◽  
Author(s):  
Michael Lane ◽  
Reinhold H. Dauskardt ◽  
Nety Krishna ◽  
Imran Hashim
Keyword(s):  
Quantitative Data ◽  
Copper Interconnects ◽  
Interface Fracture ◽  
Copper Metallization ◽  
Interfacial Chemistry ◽  
Adhesive Properties ◽  
Barrier Layers ◽  
Metal Plasma ◽  
Cu Interconnect ◽  
Metal Layers

With the advent of copper metallization in interconnect structures, new barrier layers are required to prevent copper diffusion into adjacent dielectrics and the underlying silicon. The barrier must also provide adequate adhesion to both the dielectric and copper. While Ta and TaN barrier layers have been incorporated for these purposes in copper metallization schemes, little quantitative data exist on their adhesive properties. In this study, the critical interface fracture energy and the subcritical debonding behavior of ion-metal-plasma sputtered Ta and TaN barrier layers in Cu interconnect structures were investigated. Specifically, the effects of interfacial chemistry, Cu layer thickness, and oxide type were examined. Behavior is rationalized in terms of relevant reactions at the barrier/dielectric interface and plasticity in adjacent metal layers.

scholarly journals The Adhesion and Diffusion of Saturate, Asphaltene, Resin and Aromatic (SARA) Molecules on Oxygenated and Hydrogenated Carbon Nanotubes (CNTs)

2021 ◽  
Vol 6 (9) ◽  
pp. 123
Author(s):  
Mehdi Shishehbor ◽  
Hadi S. Esmaeeli ◽  
M. Reza Pouranian
Keyword(s):  
Carbon Nanotubes ◽  
Interfacial Adhesion ◽  
Asphalt Binder ◽  
Adhesion Energy ◽  
Dynamics Simulation ◽  
Hydroxyl Groups ◽  
Reactive Molecular Dynamics ◽  
Cnts Surface ◽  
And Diffusion ◽  
Diffusion Properties

The interfacial adhesion between asphalt binder and carbon nanotubes (CNTs) depends on many nanoscopic properties such as diffusion of SARA molecules on CNTs surface. Functionalization of CNTs with Oxygens (O=CNTs), hydroxyl groups (HO–CNTs), and hydrogens (H–CNTs) has been an effective way to modify the surface properties of CNTs and ultimately the macroscopic properties of the CNT-composites. This paper presents the effect of different dosages of oxygenated and hydrogenated CNTs on the adhesion and diffusion of SARA molecules on CNTs’ surfaces. First, reactive molecular dynamics simulation is used to oxygenate and hydrogenate CNTs up to a certain dosage. Next, it is employed to model the interaction and diffusion of SARA molecules with the functionalized CNTs. We employ the steer molecular dynamic (SMD) and Einstein formula to calculate the adhesion and diffusion properties. The results demonstrate that hydrogenation has little effect on the adhesion energy, while oxygenation can increase adhesion energy up to 100% for 25% dosage. The diffusion coefficient dramatically drops for both oxygenated and hydrogenated CNTs, with lower values for the latter. We observe that for hydrogenated and oxygenated CNTs at different dosages, asphaltene, resin, aromatic, and saturate molecules have the highest to lowest values, respectively.

Synthesis of Carboxymethyl Starch-Bio-Based Epoxy Resin and their Impact on Mechanical Properties

2020 ◽  
Vol 234 (11-12) ◽  
pp. 1759-1769 ◽  
Author(s):  
Tariq Aziz ◽  
Hong Fan ◽  
Farman Ullah Khan ◽  
Roh Ullah ◽  
Fazal Haq ◽  
...  
Keyword(s):  
Epoxy Resin ◽  
Interfacial Adhesion ◽  
Diglycidyl Ether ◽  
Scanning Calorimetry ◽  
Adhesive Properties ◽  
Toxic Side Effect ◽  
Dimethyl Siloxane ◽  
Naturally Occurring ◽  
Lower Viscosity ◽  
Chain Lengths

AbstractIn the current research, we observed numerous suggestions are promoting the use of bio-based epoxy resins, replacing the petroleum-based products like Diglycidyl ether of bisphenol A type epoxy resin DGEBA. With the passage of time, the impending challenges include preparation of environmentally-friendly epoxy with minimum toxic side effect and improved properties. Therefore, we describe a very useful method for preparing new silicone-bridged dimethyl siloxane monomers in high quantity, derived from naturally occurring eugenol. By putting the methyl siloxane, computed with different chain lengths into their molecular backbone. Such epoxy monomers have different molecular structure with high purity. This dimethyl siloxane epoxy, with lower viscosity than commercial DGEBA epoxy, has superior thermal properties, which were evaluated using differential scanning calorimetry DSC. Modification of CMS increases the hydrophilicity. Bio-based epoxy (self-prepared) resin improved adhesive properties, with the help of modified CMS. This study presents a very easy and effective chemical modification to enhance interfacial adhesion composites with superior properties.

Modeling of Thermo-Mechanical Stresses in Copper Interconnect/Low-k Dielectric Systems

2005 ◽  
Author(s):  
Y.-L. Shen
Keyword(s):  
Structural Integrity ◽  
Temperature Response ◽  
Future Generation ◽  
Interface Fracture ◽  
Deformation Pattern ◽  
Barrier Layers ◽  
Copper Interconnect ◽  
On Chip ◽  
Interconnect Systems ◽  
Low K

Systematic finite element analyses are carried out to model the thermomechanical stresses in on-chip copper interconnect systems. Constitutive behavior of encapsulated copper films, determined by experimentally measuring the stress-temperature response during thermal cycling, is used in the model for predicting stresses in copper interconnect/low-k dielectric structures. Various combinations of oxide and polymer-based low-k dielectric schemes are considered. The evolution of stresses and deformation pattern in the dual-damascene copper, barrier layers, and the dielectrics is seen to have direct connections to the structural integrity of contemporary and future-generation devices. In particular, stresses experienced by the thin barrier layers and the mechanically weak low-k dielectrics are critically assessed. A parametric analysis on the influence of low-k material properties is also conducted. Practical implications in reliability issues such as voiding, interface fracture, electromigration and dielectric failure are discussed.

Modeling Copper Diffusion in Silicon Oxide, Nitride, and Carbide

2002 ◽  
Vol 716 ◽  
Author(s):  
Vladimir Zubkov ◽  
Joseph Han ◽  
Grace Sun ◽  
Charles Musgrave ◽  
Sheldon Aronowitz
Keyword(s):  
Density Functional ◽  
Silicon Oxide ◽  
Copper Ions ◽  
Barrier Properties ◽  
Amorphous Oxides ◽  
Functional Theory ◽  
Copper Diffusion ◽  
The Difference ◽  
Stable Ring ◽  
Diffusion Properties

AbstractDensity functional theory was applied to simulate copper diffusion in silicon oxide, nitride, and carbide (SiOx, SiNx, SiCx). Because copper drift into oxide is significantly enhanced by negative bias, copper ions are the active diffusing species. Clusters and, in some cases supercells, modeling various ring configurations of the amorphous networks of silicon oxide, nitride, and carbide were employed. Interactions of both neutral copper and its cation, Cu+, with the network were explored. Calculations revealed a strong binding of Cu+ to SiOx, SiCx, and SiNx in contrast with neutral Cu. The Cu+ attraction to carbide clusters is significantly lower than to SiOx and SiNx, explaining the effective barrier properties of SiCx. The estimated lower bounds for activation energies for Cu+ hops between stable ring clusters of SiOx and SiNx are similar. This implies that the difference in Cu diffusion properties between oxides and nitrides is likely due to a higher percentage of large rings in amorphous oxides compared with nitrides. An approach to increasing the resistance of oxides to Cu+ diffusion is suggested.

Chemical-Mechanical Planarization of Aluminum-Based Alloys for Multilevel Metallization

MRS Bulletin ◽  
1995 ◽  
Vol 20 (11) ◽  
pp. 61-64 ◽  
Author(s):  
M.A. Fury ◽  
D.L. Scherber ◽  
M.A. Stell
Keyword(s):  
Silicon Oxide ◽  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Small Diameter ◽  
Copper Metallization ◽  
Yield Data ◽  
Technical Community ◽  
Yield Learning ◽  
History Of ◽  
Process Strategy

As recently as 1993, the prevailing presumption among the semiconductor technical community was that then-current development efforts associated with aluminum lines and tungsten damascene vias needed to shift rapidly to copper multilevel interconnect schemes. This is exemplified by the June 1993 issue of the MRS Bulletin, which featured copper metallization as its theme. In the intervening years, however, that same technical community revised the Semiconductor Industry Association (SIA) roadmap and placed renewed emphasis on the use of an all-aluminum interconnect scheme. This was done largely in deference to the costs associated with converting existing semiconductor lines to copper-compatible facilities. In addition to tooling costs, there is a learning curve for copper systems that remains to be established for device reliability, field failures, yield learning, and process maturation. On the other hand, existing fabs are already compatible with aluminum metallurgies, and there is a rich history of reliability and yield data.This change in direction creates two immediate needs: (1) the need to fill small-diameter vertical interconnects (vias) with void-free aluminum and (2) the need to remove the top surface aluminum resulting from its blanket deposition (overburden) following the metal fill. In addition, for high circuit-density applications, it may be desirable, if not necessary, to form the metal lines using the same damascene fill method as is used for the vias. This process strategy replaces metal etching and insulator gap fill with insulator (usually silicon oxide) etching and metal gap fill.

Characteristics of the Oxidation Barrier Layers for Copper Metallization

1994 ◽  
Author(s):  
K.-I. Lee ◽  
K.-I. Min ◽  
S.-K. Joo ◽  
K.-G. Rha ◽  
W.-S. Kim
Keyword(s):  
Copper Metallization ◽  
Barrier Layers

First principles study of interfacial adhesion: The Mo/MoSi2 Interface With and Without Impurities

1993 ◽  
Vol 314 ◽  
Author(s):  
T. Hong ◽  
J. R. Smith ◽  
D. J. Srolovitz
Keyword(s):  
First Principles ◽  
Interfacial Adhesion ◽  
Density Functional ◽  
Local Density ◽  
Interfacial Strength ◽  
Impurity Effects ◽  
Adhesive Properties ◽  
Free Interface ◽  
Adhesive Energy ◽  
Substitutional Impurities

AbstractAdhesive properties of the Mo(001)//MoSi2 (001) heterophase interface with and without C, O, B, S, and Nb impurities are calculated using a first principles local density functional approach. The adhesive energy and interfacial strength of the impurity-free interface are 10% to 15% smaller than the respective values for cleavage along the (001) planes of Mo and MoSi2. All of the impurities were found to decrease the Mo//MoSi2 adhesive energy. The substitutional impurities S and Nb decrease the interfacial strength, while the interstitial impurities C, O, and B increase it. All of the impurities increase the interfacial spacing in proportion to their covalent radii. The impurity effects on adhesion may be described in terms of competing bonding and strain effects.

Characteristics of the Oxidation Barrier Layers for Copper Metallization

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1016-1020 ◽  
Author(s):  
Kyung-Il Lee ◽  
Kyung-Ik Min ◽  
Seung-Ki Joo ◽  
Kwan-Gu Rha ◽  
Woo-Shik Kim
Keyword(s):  
Copper Metallization ◽  
Barrier Layers
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