Influence of SiGe Thickness on the Co/SiGe/Si Solid State Reaction

1999 ◽  
Vol 564 ◽  
Author(s):  
R. A. Donaton ◽  
S. Jin ◽  
H. Bender ◽  
K. Maex ◽  
A. Vantomme ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solid State ◽  
Solid State Reaction ◽  
Reaction Front ◽  
Sige Layer ◽  
Si Substrates ◽  
Slowing Down ◽  
Silicide Layer ◽  
Diffusion Paths ◽  
Thermal Stability Of

AbstractThe effect of the thickness of the SiGe layers in the Co-SiGe/Si reaction is investigated. Formation of the disilicide phase is retarded when compared to the reaction of Co with pure Si substrates. This delay is dependent on the thickness of the SiGe layer, which determines the effective Ge concentration at the reaction front, changing the energetics of the reaction. Besides, Ge expelled from the Co(Si1-yGey) compound blocks the Co diffusion paths, slowing down the reaction. The thermal stability of the silicide layer is also affected by the Ge segregation, with the film agglomerating at lower temperatures when formed on thicker SiGe layers. The slow supply of Co atoms to the reaction front, due to the blocking of Co diffusion paths by the segregated Ge, is believed to be the reason for the presence of the preferential (h00) orientation of the disilicide phase observed in our samples.

Crystallization Characteristics and Thermal Stability of Fluor-Hydroxyapatite Composites with Zirconia

2012 ◽  
Vol 182-183 ◽  
pp. 122-125
Author(s):  
Li Li Wang ◽  
Xiu Feng Wang ◽  
Cheng Long Yu ◽  
Hong Tao Jiang
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Solid State ◽  
Low Temperature ◽  
Solid Solutions ◽  
Tricalcium Phosphate ◽  
Solid State Reaction ◽  
Calcium Fluoride ◽  
Raw Materials ◽  
Thermal Stability Of

Hydroxyapatite (HA) was synthesized in presence of 20wt% m-ZrO2by solid state reaction between tricalcium phosphate(TCP) and Ca(OH)2at 1000 °C for 2h. Similarily, Fluorine hydroxyapatite(FA) was synthesized using tricalcium phosphate and calcium fluoride as raw materials at 1000 °Cfor 3h. The as-prepared HA was mixed with 10%,25%,45%,55%,70wt% FA and the mixture was sintered at 1000°C-1400°C for 2h. The main phase and bulk density was measured. The results show that when the relative amount of FA to HA increased, the decomposition of the composite is decreased gradually because of the formation of thermally stable FHA solid solutions. Low temperature would effect the exchange of ionic between FA and HA,while high temperature would impact synthesis of composites, because high temperature would lead to dissolution of HA ,which has to react with FA. Increase the content of HA would be advantage for synthesis FHA-ZrO2composite.

Effect of the Crystallographic Orientation of Underlying Poly-Si on the Thermal Stability of the TiSi2 Film

1992 ◽  
Vol 280 ◽  
Author(s):  
Y. W. Kim ◽  
I. K. Kim ◽  
N. I. Lee ◽  
J. W. Ko ◽  
S. T. Ahn ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Solid State ◽  
Surface Energy ◽  
Microstructural Evolution ◽  
Solid State Reaction ◽  
Crystallographic Orientation ◽  
Amorphous Si ◽  
Si Films ◽  
Thermal Stability Of

ABSTRACTThe effect of the crystallographic orientation of underlying poly-Si film on the thermal stability of the TiSi2 film was studied. Different preferred orientations of the poly-Si film were obtained by annealing poly-Si or amorphous Si films at various temperatures. The TiSi2 film was formed by the solid-state reaction of the Ti film sputtered on the poly-Si film. The thermal stability of the TiSi2 film was evaluated by changes in the sheet resistance and microstructural evolution during furnace anneals. The TiSi2 film on poly-Si with the <110> preferred orientation shows more stable conductivity during high temperature anneals than with the <111> orientation. The surface energy of underlying poly-Si is expected to influence the thermal stability of the TiSi2/poly-Si structure significantly. Better thermal stability of the TiSi2 film can be obtained by the higher surface energy of underlying poly-Si.

scholarly journals Synthesis, crystal structure, and thermal stability of double borate Na3ErB2O6

2021 ◽  
Vol 8 (4) ◽  
pp. 20218402
Author(s):  
Alexey K. Subanakov ◽  
Evgeniy V. Kovtunets ◽  
Bair G. Bazarov ◽  
Jibzema G. Bazarova
Keyword(s):  
Crystal Structure ◽  
Thermal Stability ◽  
Phase Transitions ◽  
Solid State ◽  
Solid State Reaction ◽  
Rietveld Method ◽  
Three Dimensional ◽  
Dsc Measurements ◽  
Reversible Phase ◽  
Thermal Stability Of

Double borate Na3ErB2O6 was synthesized by the solid-state reaction. The crystal structure of Na3ErB2O6 was refined by the Rietveld method: P21/c, a = 6.49775(14) Å, b = 8.50424(17) Å, c = 12.0067(3) Å, β = 118.4797(9)°, Z = 4. The crystal structure of Na3ErB2O6 consists of –[ErO6]∞-chains along the "b" axis, which are linked by BO3 triangles in a three-dimensional framework. Sodium atoms occupy empty positions inside the channels. The thermal behavior of Na3ErB2O6 was studied in detail in the range of 25–1150 °C range by DSC and TG methods. Na3ErB2O6 congruently melts at 1116 °C. Based on the results of DSC measurements, three reversible phase transitions were found for Na3ErB2O6.

scholarly journals Effect of ZnO on (ferroelectric) fatigue retention and thermal stability of ferroelectric properties in lead free (K0.5Na0.5)(Nb0.7Ta0.3)O3 ceramics

RSC Advances ◽  
2019 ◽  
Vol 9 (60) ◽  
pp. 34888-34895
Author(s):  
Vineetha P ◽  
Roshan Jose ◽  
K. Venkata Saravanan
Keyword(s):  
Thermal Stability ◽  
Solid State ◽  
Solid State Reaction ◽  
Ferroelectric Properties ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Reaction Method ◽  
Thermal Stability Of

This work investigates and reports the effect of ZnO addition on the ferroelectric properties of (K0.5Na0.5)(Nb0.7Ta0.3)O3 (KNNT) ceramics prepared by a solid state reaction method.

Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si1−xGex substrate

2016 ◽  
Vol 149 ◽  
pp. 46-51
Author(s):  
Antony Premkumar Peter ◽  
Thomas Witters ◽  
Shibesh Dutta ◽  
Andriy Hikavvy ◽  
Inge Vaesen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Solid State ◽  
Phase Analysis ◽  
Solid State Reaction ◽  
Thermal Stability Of

The Optical Properties and Stability of GE and Sn-Doped TEOx Films

1986 ◽  
Vol 70 ◽  
Author(s):  
W -Y Lee ◽  
C. R. Davis ◽  
G. Lim ◽  
H. Coufal ◽  
F. Sequeda
Keyword(s):  
Thermal Stability ◽  
Optical Properties ◽  
Solid State ◽  
Solid State Reaction ◽  
Alloy Films ◽  
A Value ◽  
Thermal Stability Of

ABSTRACTThe optical properties and the thermal stability of Ge and Sn doped TeOx films prepared by coevaporating TeO2, Te, Ge and Sn are reported. These films are amorphous as-deposited and crystalline Te appears after annealing at, e.g., 100 to 250°C. As expected, the addition of Ge and Sn increases the absorption of the TeOx films at the wavelength of interest (e.g., 830 nm). However, the thermal stability of (TeO1.1)1-xGex (x=0 to ~0.7) films is found to decrease with increasing x initially, starting to increase with increasing x only after x reaches a value between 0.3 and 0.4. These results differ from those reported previously for Ge and Sn-doped TeOx films and from those observed for Te-Ge alloy films. Interpretations of these results based on a solid state reaction between TeO2 and Ge or Sn during deposition are presented and discussed.

Study on the Morphology and Thermal Stability of Li2SrSiO4: Tb3+ Materials

2014 ◽  
Vol 989-994 ◽  
pp. 437-440 ◽  
Author(s):  
Pan Li You
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Solid State ◽  
White Light ◽  
Solid State Reaction ◽  
Emission Intensity ◽  
Room Temperature ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Thermal Stability Of

A series of Tb3+-doped Li2SrSiO4:Tb3+phosphors were prepared by high temperature solid state reaction. The morphology and the thermal stability of Li2SrSiO4:Tb3+phosphors were discussed by SEM and PL measurements, respectively. The results showed that the morphology of Li2SrSiO4:Tb3+was changed from flower-like to rod-like with increasing Tb3+-doped content. Moreover, the emission intensity measured at 3500C almost maintain with constant compared with that measured at room temperature. The results showed that Li2SrSiO4:Tb3+phosphor might be a potential phosphor for white light-emitting diodes.

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