EPITAXY OF CdTe ON (100) GaAs
Keyword(s):
AbstractTwo epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a selected orientation is achieved by employing specific growth techniques. The growth techniques for selection of both orientations are described. High resolution electron microscopy has been used to investigate the interface between the CdTe epilayer and the GaAs substrate. For the (111) orientation strong interaction exists between the epitaxial deposit and the substrate, whereas a weakened interaction between deposit and substrate induces the (100) orientation.
1983 ◽
Vol 41
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pp. 738-739
1983 ◽
Vol 41
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pp. 730-731
1978 ◽
Vol 36
(1)
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pp. 274-275
1978 ◽
Vol 36
(1)
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pp. 222-223
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1988 ◽
Vol 46
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pp. 540-541
1986 ◽
Vol 44
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pp. 390-391
1995 ◽
Vol 53
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pp. 172-173
1996 ◽
Vol 54
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pp. 672-673