QUANTUM CONFINEMENT EFFECTS IN ZnSe/ZnMnSe STRAINED-LAYER SUPERLATTICES

1985 ◽  
Vol 56 ◽  
Author(s):  
R.B. Bylsma ◽  
R. Frohne ◽  
J. Kossut ◽  
W.M. Becker ◽  
LA. Kolodziejski ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Energy Levels ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Excited State Energy ◽  
Strained Layer ◽  
Barrier Materials ◽  
Quantum Confinement Effects ◽  
Strained Layer Superlattices ◽  
Strain Dependent

AbstractPhotoluminescence and photoluminescence excitation spectroscopy have been used to identify excited state energy levels in ZnSe/ZnMnSe strained-layer superlattices. Several ZnSe/ZnMnSe superlattices have been grown by MBE with different concentrationsof Mn in the barrier material and consequently with different degrees of lattice mismatch between the ZnSe well and ZnMnSe barrier materials. A strain-induced decrease of the band gap is observed in these structures. Photoluminescence excitation spectra reveal a strain dependent splitting of the heavy and light hole n=1 subbands. The magnitude of this splitting, as well as the observed photoluminescence red-shift, are compatible with expectations based on calculated strains and the deformation potentials of ZnSe.

High Resolution Site-Selective Studies of Erbium-Centers in GaN and GaN:Mg.

2005 ◽  
Vol 866 ◽  
Author(s):  
V. Glukhanyuk ◽  
H. Przybylińska ◽  
A. Kozanecki ◽  
W. Jantsch
Keyword(s):  
High Resolution ◽  
Point Charge ◽  
Energy Levels ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Point Charge Model ◽  
Mg Doping ◽  
Charge Model ◽  
Site Selective ◽  
Good Agreement

AbstractIn this work the high resolution optical spectroscopy is used in order to determine the positions of the Stark split 4I15/2, 4I11/2 and 4I9/2 energy levels of Er3+ in GaN and GaN:Mg. Photoluminescence and photoluminescence excitation spectra were measured at energies corresponding to the 4I15/2→4I9/2 and 4I15/2→4I11/2 absorption transitions. Low Er implant doses were applied to reduce the number of possible defects. In undoped GaN only a single Er-center was observed and no influence of Mg doping on the energy level splittings of this center in GaN:Mg was found. Numerical analysis based on point charge model was used to calculate parameters of the local crystal field (CF) acting on Er3+ ions. The splittings of the 4I9/2 and 4I11/2 energy levels were calculated in weak CF approach and good agreement with experimental results was obtained. The calculations confirmed that the symmetry of the erbium center in hexagonal GaN is C3v.

Materials Aspects of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
Russ Fischer
Keyword(s):  
Dislocation Density ◽  
Lattice Mismatch ◽  
Strained Layer ◽  
Gaas On Si ◽  
Intermediate Layers ◽  
Device Applications ◽  
Strained Layer Superlattices

SUMMARY ABSTRACTDespite the 4.2% lattice mismatch, several laboratories have demonstrated that the quality of GaAs grown on Si is high enough for practical device applications [1–5]. At the GaAs/Si interface, a dislocation density of roughly 1012cm−2 is required to accommodate the mismatch. Therefore various techniques of dislocation filtering are necessary to provide material with acceptable dislocation counts. Among these techniques are the use of tilted substrates, strained layer superlattices, and intermediate layers.

An Evaluation of Implantation-Disordering of (Inga)As/Gaas Strained-Layer Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
D. R. Myers ◽  
C. E. Barnes ◽  
G. W. Arnold ◽  
L. R. Dawson ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Transport Properties ◽  
Lattice Mismatch ◽  
Electrical Activation ◽  
Chemical System ◽  
Virgin Material ◽  
Bulk Gaas ◽  
Strained Layer ◽  
Electroluminescence Intensity ◽  
Strained Layer Superlattices ◽  
Lattice Matched

AbstractWe have examined the optical and transport properties of In.2Ga.8As/GaAs straled-kayer superlZotices (SLS's), which have been implanted either with 5 × 1015/cm2, 250keV Zn+ or with 5 × 1014/cm2, 70keV Be+ and annealed under an arsenic overpressure at 600 °C. For both cases, electrical activation in the implantation-doped regions equalled that of similar implants and anneals in bulk GaAs, even though the Be implant retained the SLS structure, while the Zn implant intermixed the SLS layers to produce an alloy semiconductor of the average SLS composition. Photoluminescence intensities in the annealed implanted regions were significantly reduced from that of virgin material, apparently due to residual implant damage. Diodes formed from both the Be- and the Zn-implanted SLS's produced electroluminescence intensity comparable to that of grown-junction SLS diodes in the same chemical system, despite the implantation processing and the potential for vertical lattice mismatch in the Zn-disordered SLS device. These results indicate that Zn-disordering can be as useful in strained-layer superlattices as in lattice-matched systems.

Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices

1987 ◽  
Vol 36 (2) ◽  
pp. 1320-1323 ◽  
Author(s):  
D. Gershoni ◽  
J. M. Vandenberg ◽  
R. A. Hamm ◽  
H. Temkin ◽  
M. B. Panish
Keyword(s):  
Energy Levels ◽  
Electronic Energy ◽  
Strained Layer ◽  
Electronic Energy Levels ◽  
Strained Layer Superlattices

CONDUCTION BAND ENERGY LEVELS IN SUPERLATTICES WITH COMPLEX UNIT CELLS

1985 ◽  
Vol 56 ◽  
Author(s):  
G. C. OSBOURN
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Energy Levels ◽  
Unit Cell ◽  
Mass Model ◽  
Band Energy ◽  
Strained Layer ◽  
Unit Cells ◽  
Strained Layer Superlattices ◽  
Effective Mass Model

AbstractThe conduction band energy levels and wavefunctions in a number of superlattices with more than two layers per unit cell have been calculated using an effective mass model. Many of these structures exhibit energy levels which can be modeled as resulting from a conventional superlattice with a modified bulk conduction band minimum in the effective wells. These structures should be useful for extending the size of the superlattice periodsallowed in strained—layer superlattices.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

2019 ◽  
Vol 672 ◽  
pp. 146-151 ◽  
Author(s):  
M.A. Sulimov ◽  
M.V. Yakushev ◽  
J. Márquez-Prieto ◽  
I. Forbes ◽  
P.R. Edwards ◽  
...  
Keyword(s):  
Photoluminescence Excitation ◽  
Excitation Spectra

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices
Sign in / Sign up

Export Citation Format

Share Document