CONDUCTION BAND ENERGY LEVELS IN SUPERLATTICES WITH COMPLEX UNIT CELLS

1985 ◽  
Vol 56 ◽  
Author(s):  
G. C. OSBOURN

AbstractThe conduction band energy levels and wavefunctions in a number of superlattices with more than two layers per unit cell have been calculated using an effective mass model. Many of these structures exhibit energy levels which can be modeled as resulting from a conventional superlattice with a modified bulk conduction band minimum in the effective wells. These structures should be useful for extending the size of the superlattice periodsallowed in strained—layer superlattices.

2020 ◽  
Vol 54 (3) ◽  
pp. 311-316 ◽  
Author(s):  
K. P. Misra ◽  
S. Jain ◽  
A. Agarwala ◽  
N. Halder ◽  
S. Chattopadhyay

2018 ◽  
Vol 13 (7) ◽  
pp. 986-994 ◽  
Author(s):  
W. Yang ◽  
J. J. Song ◽  
H. Y. Hu ◽  
H. M. Zhang

1997 ◽  
Vol 282-287 ◽  
pp. 2357-2358
Author(s):  
J.-F. de Marneffe ◽  
J. Schroeder ◽  
R. Deltour ◽  
A.G.M. Jansen ◽  
P. Wyder

1986 ◽  
Vol 25 (Part 1, No. 9) ◽  
pp. 1327-1331 ◽  
Author(s):  
Hiromu Kato ◽  
Naoya Iguchi ◽  
Shigeaki Chika ◽  
Masaaki Nakayama ◽  
Naokatsu Sano

2012 ◽  
Vol 22 (12) ◽  
pp. 1250039 ◽  
Author(s):  
NAOUFEL BEN ABDALLAH ◽  
CLÉMENT JOURDANA ◽  
PAOLA PIETRA

In this paper, we present the derivation and the simulation of an effective mass model, describing the quantum motion of electrons in an ultra-scaled confined nanostructure. Due to the strong confinement, the crystal lattice is considered periodic only in the one-dimensional transport direction and an atomistic description of the entire cross-section is given. Using an envelope function decomposition, an effective mass approximation is obtained. It consists of a sequence of one-dimensional device-dependent Schrödinger equations, one for each energy band, in which quantities retaining the effects of the confinement and of the transversal crystal structure are inserted. In order to model a gate-all-around field effect transistor, self-consistent computations include the resolution, in the whole domain, of a Poisson equation describing a slowly varying macroscopic potential. Simulations of the electron transport in a simplified one-wall carbon nanotube are presented.


1984 ◽  
Vol 55 (1-4) ◽  
pp. 111-115
Author(s):  
I. Kirschner ◽  
Gy. Kovács ◽  
T. Porjesz

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