Anisotropic Transport in Microcrystalline P-I-N Devices

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Vieira ◽  
A. Fantoni ◽  
M. Fernandes ◽  
A. Maçarico ◽  
I. Martins ◽  
...  
Keyword(s):  
Near Infrared ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Forward Bias ◽  
Infrared Region ◽  
Open Circuit ◽  
Local Fields ◽  
Two Phase ◽  
Enhanced Sensitivity ◽  
Percolation Path

AbstractEntirely μc-Si:H p-i-n structures presenting an enhanced sensitivity to the near infrared region and a positive spectral response under forward bias higher than the open circuit voltage are analysed under different external voltage bias and illumination conditions.A two phase model to explain the transport properties is proposed using as input parameters the measured experimental data. The results suggest that the transport is preferentially concentrated inside the crystalline grains. The conduction within the amorphous regions is poor. The percolation path is different for electrons and holes and is determined by the local fields at the boundaries. These local fields are independent of the externally applied condition, and they can be related to the persistence of the small photocurrent observed when a bias voltage higher than the open circuit voltage is applied.

High-detectivity panchromatic photodetectors for the near infrared region based on a dimeric porphyrin small molecule

2018 ◽  
Vol 6 (13) ◽  
pp. 3341-3345 ◽  
Author(s):  
Liangang Xiao ◽  
Song Chen ◽  
Xuebin Chen ◽  
Xiaobin Peng ◽  
Yong Cao ◽  
...  
Keyword(s):  
Small Molecule ◽  
Near Infrared ◽  
Spectral Response ◽  
Infrared Region ◽  
Zero Bias ◽  
Near Infrared Region

A dimeric porphyrin-based photodetector shows a strong spectral response at 1000 nm with a detectivity of 1013Jones at zero bias.

Efficient Cu(In, Ga)Se2 Based Solar Cells Prepared by Electrodeposition

2003 ◽  
Vol 763 ◽  
Author(s):  
D. Guimard ◽  
N. Bodereau ◽  
J. Kurdi ◽  
J.F. Guillemoles ◽  
D. Lincot ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Deposition Process ◽  
Open Circuit ◽  
Response Analysis ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractCuInSe2 and Cu(In, Ga)Se2 precursor layers have been prepared by electrodeposition, with morphologies suitable for device completion. These precursor films were transformed into photovoltaic quality films after thermal annealing without any post-additional vacuum deposition process. Depending on the preparation parameters annealed films with different band gaps between 1eV and 1.5 eV have been prepared. The dependence of resulting solar cell parameters has been investigated. The best efficiency achieved is about 10,2 % for a band gap of 1.45 eV. This device presents an open circuit voltage value of 740 mV, in agreement with the higher band gap value. Device characterisations (current-voltage, capacitance-voltage and spectral response analysis) have been performed. Admittance spectroscopy at room temperature indicates the presence of two acceptor traps at 0.3 and 0.43 eV from the valance band with density of the order of 2. 1017 cm-3 eV-1.

Glass/ITO/PbS/P3HT/Al: A Hybrid Film Solar Cell

2012 ◽  
Vol 569 ◽  
pp. 172-175
Author(s):  
Peng Wang ◽  
Li Bo Fan ◽  
Meng Yuan Yang ◽  
Zhen Hua Zhang ◽  
Xin Bing Zhu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Near Infrared ◽  
Hybrid Film ◽  
Open Circuit Voltage ◽  
High Energy ◽  
Open Circuit ◽  
Special Treatment ◽  
P3ht Film ◽  
Coating Method

A new hybrid film solar cell was made with a structure of Glass/ITO/PbS/P3HT/Al. PbS film was prepared by a simple solid-solid reaction and poly(3-hexylthiophene) (P3HT) film was obtained by a spin coating method. The solar cells are photosensitive in a large spectral range (extending from near infrared to high energy side regions). Without any special treatment, the cell with an area of 0.15 cm2 has shown values of open-circuit voltage (Voc) of 85 mV and fill factor (FF) of 0.33 under an illumination intensity of 100 mW/cm2.

scholarly journals Plasmon-Waveguide Resonances with Enhanced Figure of Merit and Their Potential for Anisotropic Biosensing in the Near Infrared Region

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Said Mahajna ◽  
Michal Neumann ◽  
Ofer Eyal ◽  
Atef Shalabney
Keyword(s):  
Figure Of Merit ◽  
Near Infrared ◽  
Propagation Distance ◽  
Infrared Region ◽  
Enhanced Sensitivity ◽  
Guided Modes ◽  
Order Of Magnitude ◽  
High Figure ◽  
Near Infrared Region ◽  
Waveguide Resonance

The TM and TE guided modes in the coupled plasmon-waveguide resonance configuration are investigated in the spectral domain. Here we use the modes dispersion to study their capability for sensing in the near infrared region. It is shown that the spectral widths of the guided modes are, at least, one order of magnitude smaller than the conventional surface plasmon resonance counterpart. The enhanced sensitivity and figure of merit of the guided modes reveal their potential for sensing in the spectral interrogation method where the traditional configurations are inherently limited. Moreover, the high resolution associated with the narrow resonances and the polarization dependence make these modes very promising for anisotropic biosensing in the spectral interrogation approach. The extremely high figure of merit, large penetration depth, and propagation distance in the near infrared region open the possibility of combining the plasmon-waveguide configuration with absorption spectroscopy techniques for molecular recognition.

Optical and Photovoltaic Properties of CdS/Ag2S Quantum Dots Co-Sensitized-Solar Cells

2013 ◽  
Vol 761 ◽  
pp. 15-18 ◽  
Author(s):  
Auttasit Tubtimtae ◽  
Ming Way Lee
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Near Infrared ◽  
Energy Gap ◽  
Photocurrent Density ◽  
Infrared Region ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Different Characteristics ◽  
Sensitized Solar Cells

Subscript textWe present a co-sensitization of CdS/Ag2S quantum-dot as sensitizers for solar cells. The optical properties of single and double-layered quantum-dot conditions were monitored using UV-Vis spectrophotometer. The results show that the different characteristics of absorption spectra depended on the types of QDs, indicating to the different energy gap of each QDs deposited on TiO2 surface and the tunable absorption ranges of the sample of double-layered quantum-dot-sensitized TiO2 electrodes are broader and the absorption intensity are higher than the single-layered quantum-dot, attributed to the co-absorption of two QDs to the light and both CdS and Ag2S are activated in visible to near-infrared region (450-1100 nm). The photovoltaic data shows that the highest efficiency of 1.41% with a photocurrent density, Jsc of 20.6 mA/cm2, an open-circuit voltage, Voc of 0.32 V and a fill factor, FF of 21.3% were yielded by the sample of CdS(3)/Ag2S(4) as an optimum condition of dipping cycles for CdS and Ag2S under irradiance of 100 mW/cm2 (AM 1.5G).

scholarly journals Увеличение коэффициента полезного действия фотопреобразователей лазерного излучения диапазона 520-540 nm на основе гетероструктур GaInP/GaAs

2021 ◽  
Vol 47 (6) ◽  
pp. 29
Author(s):  
С.А. Минтаиров ◽  
М.В. Нахимович ◽  
Р.А. Салий ◽  
М.З. Шварц ◽  
Н.А. Калюжный
Keyword(s):  
Laser Radiation ◽  
Absorption Edge ◽  
Short Wavelength ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Open Circuit ◽  
Simultaneous Increase ◽  
Wavelength Shift ◽  
Total Thickness

Photoconverters (PCs) of laser radiation (LR) for the range 520 - 540 nm based on GaInP/GaAs heterostructures have been investigated. It is shown that a decrease in the CuPt ordering in GaInP layers due to the introduction of antimony atoms leads to a short-wavelength shift of the absorption edge with a simultaneous increase in the open-circuit voltage. An increase in the total thickness of the photoactive layers of PC results in an increase in the spectral response. The performed optimization allows increasing the efficiency of the LR PC from 39.4% to 44.4%.

scholarly journals Electrical Characterization and Modeling of a Gelatin/Graphene System

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Giovanni Landi ◽  
Andrea Sorrentino ◽  
Salvatore Iannace ◽  
Heinrich C. Neitzert
Keyword(s):  
Electrical Impedance ◽  
Open Circuit Voltage ◽  
Series Resistance ◽  
Forward Bias ◽  
Electrical Characterization ◽  
Reaction Rates ◽  
Open Circuit ◽  
Charge Carriers ◽  
Low Frequencies ◽  
Multiple Step

A gelatin/graphene composite has been analyzed by means of current density-voltage and the electrical impedance measurements. The DC electrical behavior has been interpreted in terms of an equivalent Thévenin model taking into account the open circuit voltage and the series resistance. A model based on the effect of the electrical double layer and on the diffusion of the charge carriers is used for the analysis of the experimental data, obtained in the frequency domain. The model reveals for any applied voltages a marked diffusion process at low frequencies. In particular, where the charge transfer mechanism is dominant, the time distribution of the reaction rates reveals that several multiple step reactions occur in the materials, especially at high values of the applied forward bias voltages.

Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells

2013 ◽  
Vol 1551 ◽  
pp. 143-148
Author(s):  
R. Vasan ◽  
Y. F. M. Makableh ◽  
J. C. Sarker ◽  
M. O. Manasreh
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Power Conversion ◽  
Open Circuit ◽  
Interband Transitions ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTSolar cells based on InAs quantum dots embedded in InxGa1-xAs quantum wells grown on n-type GaAs substrate were fabricated and tested. Solar cells with In mole fraction (x) in the range of 0-40% were investigated. The performance of the solar cells was evaluated using current-voltage characteristics, spectral response, and quantum efficiency measurements. The spectral response and quantum efficiency spectra possess several peaks along the lower energy side of the spectra, which are attributed to the interband transitions in the structure. These peaks are red shifted as x is increased above 0 %. The device power conversion efficiency was extracted from the current-voltage characteristics using an AM 1.5 solar simulator. The short circuit current density increased as the x is increased above 0 %. But the overall power conversion efficiency decreased due to decrease in the open circuit voltage. The decrease in open circuit voltage is due strain induced dislocations caused by lattice mismatch.

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