A new low Temperature Chemical Vapor Deposition Technique for Growing Thin Films of Ti, TiN on Copper and TiO2, TixSiy on Silicon

1998 ◽  
Vol 555 ◽  
Author(s):  
J. H. Hendricks ◽  
M. I. Aquino ◽  
M. R. Zachariah
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Chemical Vapor ◽  
Metal Vapor ◽  
Environmentally Benign ◽  
Silicon Substrates ◽  
Wide Range ◽  
Vapor Deposition Technique ◽  
Cu Substrates ◽  
Tin Thin Films

In this paper, we present a process which has the benefits of operating at lower temperatures than conventional CVD, that uses low cost precursors, and produces only environmentally benign byproducts. This new method for depositing Ti, TiN, TiO2, and Ti.Siy thin films has been demonstrated using a coflow diffusion reactor to react Na metal vapor with TiCl4 as described by the following equation: 4Na(g) + TiCl4(g) ---Ar ---> Ti(s) + 4NaCl(g). In this reaction, sodium strips chlorine from titanium tetrachloride freeing titanium metal to grow into a thin film on a substrate placed in the reaction zone. TiN and TiO2 films were produced by the introduction of N2 gas or O2 gas into the reactor, respectively. Using this reaction chemistry, we have produced Ti and TiN thin films on Cu substrates at 610 °C (considerably lower than the 900 °C to 1200 °C required for conventional thermal CVD of titanium) and TiO2 and titanium silicides (TixSiy) films on silicon substrates. Thermodynamics calculations indicated that this class of chemistry is generic and that a wide range of metals and ceramics could be grown; and preliminary experiments do suggest that TiC and SiC thin films can be grown using this process. The thin films were primarily analyzed by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), and Raman pectroscopy.

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Diamond Thin Films ◽  
Hot Filament

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

scholarly journals Fabrication of Low-Fouling Surfaces on Alkyne-Functionalized Poly-(p-xylylenes) Using Click Chemistry

Polymers ◽  
2022 ◽  
Vol 14 (2) ◽  
pp. 225
Author(s):  
Pei-Ju Chen ◽  
Hsien-Yeh Chen ◽  
Wei-Bor Tsai
Keyword(s):  
Thin Films ◽  
Conjugated Polymers ◽  
Click Chemistry ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Universal Method ◽  
Surface Immobilization ◽  
Poly Ethylene Glycol ◽  
Wide Range ◽  
Poly Ethylene

A facial, versatile, and universal method that breaks the substrate limits is desirable for antifouling treatment. Thin films of functional poly-p-xylylenes (PPX) that are deposited using chemical vapor deposition (CVD) provide a powerful platform for surface immobilization of molecules. In this study, we prepared an alkyne-functionalized PPX coating on which poly (sulfobetaine methacrylate-co-Az) could be conjugated via click chemistry. We found that the conjugated polymers were very stable and inhibited cell adhesion and protein adsorption effectively. The same conjugation strategy could also be applied to conjugate azide-containing poly (ethylene glycol) and poly (NIPAAm). The results indicate that our method provides a simple and robust tool for fabricating antifouling surfaces on a wide range of substrates using CVD technology of functionalized poly (p-xylylenes) for biosensor, diagnostics, immunoassay, and other biomaterial applications.

scholarly journals Reshaping Hybrid Perovskites Emission with Flexible Polymer Microcavities

2020 ◽  
Vol 230 ◽  
pp. 00006
Author(s):  
Paola Lova ◽  
Paolo Giusto ◽  
Francesco Di Stasio ◽  
Giovanni Manfredi ◽  
Giuseppe M. Paternò ◽  
...  
Keyword(s):  
Thin Films ◽  
Photonic Crystals ◽  
Low Cost ◽  
Scale Production ◽  
Large Area ◽  
Light Emitting Devices ◽  
Flexible Polymer ◽  
Hybrid Perovskite ◽  
Wide Range ◽  
Solution Processable

Thanks to versatile optoelectronic properties solution processable perovskites have attracted increasing interest as active materials in photovoltaic and light emitting devices. However, the deposition of perovskite thin films necessitates wide range solvents that are incompatible with many other solution-processable media, including polymers that are usually dissolved by the perovskite solvents. In this work, we demonstrate that hybrid perovskite thin films can be coupled with all polymer planar photonic crystals with different approaches to achieve emission intensity enhancement and reshaping using different approaches. The possibility to control and modify the emission spectrum of a solution processable perovskite via a simple spun-cast polymer structure is indeed of great interest in optoelectronic applications requiring high color purity or emission directionality. Furthermore, thanks to the ease of fabrication and scalability of solution-processed photonic crystals, this approach could enable industrial scale production of low-cost, large area, lightweight and flexible polymer-perovskite lighting devices, which may be tuned without resorting to compositional engineering.

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer

2005 ◽  
Vol 495-497 ◽  
pp. 1371-1376
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
No Jin Park ◽  
Bee Lyong Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.

Growth of “New Form” of Polycrystalline Silicon Thin Films Synthesized by Hot Wire Chemical Vapor Deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
A. R. Middya ◽  
J-J. Liang ◽  
K. Ghosh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Crystallographic Structure ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
Vapor Deposition Technique ◽  
New Form

AbstractIn this work, we report on next-generation hot wire chemical vapor deposition technique, we call it ceramics hot-wire CVD. Using a new concept of rectangular ceramics filament holder and “confinement of thermal radiation from the filament”, a “new form” of polycrystalline silicon thin films has been developed at low temperature (˜ 250°C). The grains are found to be symmetrically distributed in array along the parallel lines, in (111) direction. On the surface of individual grains, “five-fold” and “six-fold” symmetries have been observed and we suspect that we developed “buckyball” type “giant silicon molecular solids” with different crystalline silicon lattice other than standard single-crystal silicon structure. We observed rarely found “icosaderal” symmetry in silicon thin films. This hypothesis has been supported by multiple Raman active transverse optical modes and the crystallographic structure analyzed by X-ray diffraction.

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