SiO2 Film Coatings with VUV Excimer Lamp CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
K. Kurosawa ◽  
N. Takezoe ◽  
H. Yanagida ◽  
R. Nomura ◽  
A. Yokotani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silica Film ◽  
Sio2 Film ◽  
Single Crystal Substrate ◽  
Excimer Lamp ◽  
Film Coatings ◽  
Crystal Substrate ◽  
Optical Applications

AbstractSilica film coatings were demonstrated using photo-chemical vapor deposition with a 172-nm Xe excimer lamp. Tetraethoxyorthosilicate (TEOS) molecules were successfully dissociated into SiO2+2C2H5-OH+;(residual C and H) with the 7.2-eV photons. The films were deposited onto a quartz or Al203 single crystal substrate with the deposition rate of 1 nm/min. The films were uniform and smooth enough for optical applications.

Growth of b-Axis-Oriented BaTi2O5 Nanopillars by Laser Chemical Vapor Deposition

2012 ◽  
Vol 508 ◽  
pp. 185-188 ◽  
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystal Substrate ◽  
Laser Chemical Vapor Deposition ◽  
Crystal Substrate ◽  
Nanopillar Arrays

B-Axis-Oriented Bati2o5 Nanopillars Were Prepared on (100) Mgo Single Crystal Substrate by Laser Chemical Vapor Deposition Using Ba and Ti Dipivaloylmethanate Precursors. B-Axis-Oriented Bati2o5 Nanopillars Were Approximately 250–400 Nm in Width and 2.5 μm in Height. Deposition Rate of Bati2o5 Nanopillar Arrays Was about 75 μm H−1.

(110)-oriented Bi–Sr–Ca–Cu–O superconducting thin films prepared by metalorganic chemical vapor deposition

1993 ◽  
Vol 8 (5) ◽  
pp. 978-984 ◽  
Author(s):  
Nobuhiko Kubota ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Thick Film ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Zero Resistance ◽  
Metalorganic Chemical

We have studied the superconducting Bi–Sr–Ca–Cu–O thin films prepared by metalorganic chemical vapor deposition (MOCVD). The thin films fabricated on an MgO(110) single crystal substrate show a preferential (110) orientation. The fabrication of (110)-oriented film was dependent on the chemical composition and the existence of a Sr–Ca–Cu–O buffer layer. The zero resistance temperature (Tc0) was obtained at 60 K for the 1 μm thick film and 23 K for the 300 nm thick film. The critical current density (Jc) of this film at 4.2 K was about 1 × 104 A/cm2 for the film of 1 μm thickness.

A single precursor photolitic chemical vapor deposition of silica film using a dielectric barier discharge xenon excimer lamp

1996 ◽  
Vol 69 (10) ◽  
pp. 1399-1401 ◽  
Author(s):  
Atsushi Yokotani ◽  
Noritaka Takezoe ◽  
Kou Kurosawa ◽  
Tatsushi Igarashi ◽  
Hiromitu Matsuno
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silica Film ◽  
Excimer Lamp ◽  
Single Precursor
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