The Kinetic Investigation of the Deposition of Alumina and Aluminosilicates from Mixtures of SiCl4, AlCl3, CO2, and H2

1998 ◽  
Vol 555 ◽  
Author(s):  
Stephanos F. Nitodas ◽  
Stratis V. Sotirchos
Keyword(s):  
Vapor Deposition ◽  
Catalytic Effect ◽  
Chemical Vapor ◽  
Silicon Tetrachloride ◽  
Kinetic Investigation ◽  
Pure Alumina ◽  
Deposition Rates ◽  
Pure Silica ◽  
Aluminum Trichloride ◽  
Electronic Microbalance

AbstractThe codeposition of alumina, silica, and aluminosilicates from mixtures of silicon tetrachloride, aluminum trichloride, carbon dioxide, and hydrogen is investigated in this study. Chemical vapor deposition experiments are carried out in a hot-wall reactor of tubular geometry coupled with an electronic microbalance. In order to elucidate some aspects of the codeposition process, the deposition of pure alumina and pure silica from mixtures of silicon tetrachloride and aluminum trichloride, respectively, with CO2 and H2, is also investigated. Among the most interesting findings of our study is that the presence of AIC13 has a catalytic effect on the incorporation of silica in the deposit, leading to codeposition rates that are higher than the deposition rates that are obtained when only one of the two chlorides (SiCI4 or A1C13) is present in the feed

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Ba2TiO4 and Ba4Ti13O30 Thick Films Prepared by Laser Chemical Vapor Deposition and their Microstructure

2012 ◽  
Vol 508 ◽  
pp. 199-202
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Thick Films ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Columnar Growth ◽  
Deposition Rates

Ba2TiO4 and Ba4Ti13O30 Thick Films Were Prepared by Laser Chemical Vapor Deposition Using Ba- and Ti-Dipivaloylmethanate Precursors. Single-Phase Ba2TiO4 Thick Films Were Obtained at 845–946 K and Ba/Ti Source Molar Ratio 2.4. Single-Phase Ba4Ti13O30 Films Were Obtained at 944–1011 K and Ba/Ti Source Molar Ratio 0.38. Ba2TiO4 Thick Films Consisted of Truncated Grains, while Ba4ti13o30 Thick Films Had Shellfish-Like Grains. Ba2TiO4 and Ba4Ti13O30 Thick Films Showed a Columnar Growth and their Deposition Rates Were 72 and 132 μm h−1, Respectively.

Chemical Vapor Deposition of SiC from Silacyclobutane and Methylsilane

1992 ◽  
Vol 282 ◽  
Author(s):  
A. D. Johnson ◽  
J. Perrin ◽  
J. A. Mucha ◽  
D. E. Ibbotson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
X Ray Diffraction ◽  
Kcal Mole ◽  
Deposition Rates ◽  
X Ray ◽  
Film Forming ◽  
Rich Material ◽  
Kinetics Of

ABSTRACTThe kinetics of SiC deposition has been studied over the temperature range 650–1050 ° C using the single-source reagents silacyclobutane (SCB) and methylsi-lane (MeSiH3 ) whose decomposition supplies the isomeric film-forming precursors H2Si = CH2 and HSiCH3, respectively. Thermal decomposition has been monitored by mass spectrometry and the SiC thin films characterized by scattering spec-trometry (RBS & ERD), FTIR spectroscopy and X-ray diffraction. Deposition rates from the two are comparable, with activation energies of 41 kcal/mole and 53 kcal/mole for SCB and MeSiH3 decomposition, respectively. Silacyclobutane deposits C-rich material lower temperatures, while SiC deposited from MeSiH3 is Si-rich at all temperatures. A mechanism for SiC CVD is proposed that is consistent with the observed kinetics and products.

Deposition and Characterization of Metalorganic Chemical Vapor Deposition ZrO2 Thin Films Using Zr(Thd)4

1991 ◽  
Vol 250 ◽  
Author(s):  
Jie Si ◽  
Chien H. Peng ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Crystal Silicon ◽  
Deposition Rates ◽  
Deposited Films ◽  
Metalorganic Chemical

AbstractExcellent quality ZrO2 thin films were successfully deposited on single crystal silicon wafers by metalorganic chemical vapor deposition (MOCVD) at reduced pressures using tetrakis(2,2,6,6—tetramethyl—3,5—heptanedionato) zirconium, [Zr(thd)4]. For substrate temperatures below 530°C, the film deposition rates were very small (≤ 1 nm/min). The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As—deposited films are stoichiometric (Zr/O = 1/2) and carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as—deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post—deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, are reported. The measured value of the dielectric constant of the as—deposited ZrO2 films is around 19 in the frequency range of 5 kHz to 1000 kHz.

Prediction of chemical vapor deposition rates on monofilaments and its implications for fiber properties

1992 ◽  
Vol 7 (11) ◽  
pp. 3023-3031
Author(s):  
S.A. Gökoĝlu ◽  
M. Kuczmarski ◽  
L.C. Veitch
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Axisymmetric Flow ◽  
Small Diameter ◽  
Chemical Vapor ◽  
Chemical Kinetic ◽  
Deposition Rates ◽  
Fiber Properties ◽  
Hydrogen Carrier ◽  
Physical And Chemical

Deposition rates are predicted in a cylindrical upflow reactor designed for chemical vapor deposition (CVD) on monofilaments. Deposition of silicon from silane in a hydrogen carrier gas is chosen as a relevant example. The effects of gas and surface chemistry are studied in a two-dimensional axisymmetric flow field for this chemically well-studied system. Model predictions are compared to experimental CVD rate measurements. The differences in some physical and chemical phenomena between such small diameter (∼150 μm) fiber substrates and other typical CVD substrates are highlighted. The influence of the Soret mass transport mechanism is determined to be extraordinarily significant. The difficulties associated with the accurate measurement and control of the fiber temperature are discussed. Model prediction sensitivities are investigated with respect to fiber temperatures, fiber radii, Soret transport, and chemical kinetic parameters. The implications of the predicted instantaneous rates are discussed relative to the desired fiber properties for both batch and continuous processes.

Effects of Ethylene/Nitrogen Mixtures on Thermal Chemical Vapor Deposition Rates and Microstructures of Carbon Films

2012 ◽  
Vol 159 (6) ◽  
pp. D367-D374 ◽  
Author(s):  
Liang-Hsun Lai ◽  
Ke-Jie Huang ◽  
Sham-Tsong Shiue ◽  
Jing-Tang Chang ◽  
Ju-Liang He
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Deposition Rates ◽  
Thermal Chemical Vapor Deposition

Rapid Growth of Ceramic Films by Particle-Vapor Codeposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Robert H. Hurt ◽  
Mark D. Allendorf
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Ceramic Films

AbstractParticle-enhanced chemical vapor deposition (PECVD) is capable of producing ceramic films at high deposition rates. A mathematical model of the particle-vapor codeposition process has been developed and has been applied to PECVD processes to predict deposition rate enhancements and deposit properties.

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