Epitaxial Growth of Rare-Earth Gallates on Single-Crystal Oxide Substrates

1998 ◽  
Vol 547 ◽  
Author(s):  
Jonathan S. Morrell ◽  
Ziling B. Xue ◽  
Eliot D. Specht ◽  
David B. Beach
Keyword(s):  
Single Crystal ◽  
Spin Coating ◽  
Epitaxial Films ◽  
Lanthanum Gallate ◽  
Epitaxial Relationship ◽  
Plane Orientation ◽  
Lanthanum Aluminate ◽  
Pole Figures ◽  
Oxide Substrates ◽  
Out Of Plane

AbstractEpitaxial films of lanthanum gallate, praseodymium gallate, and neodymium gallate were prepared on [100] strontium titanate and [100] lanthanum aluminate single crystal substrates using solution techniques. The solutions employed were mixed-metal methoxyethoxides in 2-methoxyethanol. Films were prepared by spin-coating with a partially hydrolyzed solution, followed by firing at 850 °C for 20 minutes in air. Theta/2-theta scans revealed only [h00] reflections and omega scans (rocking curves) indicated good out-of-plane orientation. Pole figures and phi scans revealed good in-plane orientation and a [100] || [100] epitaxial relationship between the film and the substrate.

Sol-Gel Synthesis of Epitaxial Films of (Sr,Ba)Bi2(Nb,Ta)2O9 and Bi4Ti3O12 on [100] SrTiO3

1997 ◽  
Vol 495 ◽  
Author(s):  
Jonathan S. Morrell ◽  
Ziling B. Xue ◽  
Eliot D. Specht ◽  
David B. Beach
Keyword(s):  
Spin Coating ◽  
Sol Gel ◽  
Epitaxial Films ◽  
Full Width ◽  
Lattice Constants ◽  
Plane Orientation ◽  
Pole Figures ◽  
Sol Gel Process ◽  
Out Of Plane ◽  
Sol Gel Synthesis

ABSTRACTAn all-alkoxide sol-gel process utilizing methoxyethoxide complexes in 2-methoxyethanol was used to prepare epitaxial films of SrBi2Nb2O9, SrBi2Ta2O9, BaBi2Nb2O9, BaBi2Ta2O9, and Bi4Ti3O12 on [100] oriented SrTiO3 single crystals. Films were prepared by spin coating strontium titanate substrates with partially hydrolyzed alkoxide solutions and firing in air at 850 °C for 20 minutes. Out-of-plane orientation was confirmed by θ-2θ scans which showed only [002ℓ] reflections. In-plane orientation was determined by pole figures and phi-scans about the [105] plane in the case of the (Sr,Ba)Bi2(Nb,Ta)2O9 complexes and the [117] plane in the case of Bi4Ti3O12. Lattice constants and full-width at half-maximum (fwhm) values for both in-plane and out-of-plane reflections are reported.

scholarly journals Response to Comment on “Spin coating epitaxial films”

Science ◽  
2019 ◽  
Vol 365 (6458) ◽  
pp. eaay3966 ◽  
Author(s):  
Meagan V. Kelso ◽  
Naveen K. Mahenderkar ◽  
Qingzhi Chen ◽  
John Z. Tubbesing ◽  
Jay A. Switzer
Keyword(s):  
Single Crystal ◽  
Spin Coating ◽  
Epitaxial Films ◽  
Background Intensity ◽  
X Ray ◽  
Coated Materials ◽  
Pole Figures ◽  
Ray Patterns

Lu and Tang claim that the spin-coated films in our study are not epitaxial. They assume that all of the background intensity in the x-ray pole figures of the spin-coated materials is due to randomly oriented grains. There is no evidence for randomly oriented grains in the 2θ x-ray patterns. The background intensity in the pole figures is also comparable to the background from the single-crystal substrates, which is inconsistent with their assumption.

scholarly journals Comment on “Spin coating epitaxial films”

Science ◽  
2019 ◽  
Vol 365 (6458) ◽  
pp. eaay3894
Author(s):  
Chaojing Lu ◽  
Lingli Tang
Keyword(s):  
Single Crystal ◽  
Spin Coating ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pole Figures

Kelso et al. (Reports, 12 April 2019, p. 166) claim that inorganic epitaxial films were deposited onto single-crystal or single-crystal–like substrates by spin coating. The epitaxial relationships were determined by x-ray diffraction. According to their pole figures, we estimate that each of their films contains only 4.1% to 25.5% epitaxial grains. None of their films can be considered epitaxial.

Microstructure development of sol-gel derived epitaxial LiNbO3 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2564-2572 ◽  
Author(s):  
Keiichi Nashimoto ◽  
Michael J. Cima ◽  
Paul C. McIntyre ◽  
Wendell E. Rhine
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Spin Coating ◽  
Film Growth ◽  
Intermediate Phase ◽  
Substrate Surface ◽  
Sol Gel ◽  
Precursor Solution ◽  
Epitaxial Films ◽  
Epitaxial Relationship

Film growth and microstructural evolution were investigated for sol-gel derived LiNbO3 thin films deposited on lattice-matched single-crystal substrates. Epitaxial LiNbO3 films of about 100 nm nominal thickness were prepared by spin coating a solution of the lithium niobium ethoxide on sapphire (0001) substrates and annealing at 400 °C or 700 °C in a humidified oxygen atmosphere. These films exhibited an epitaxial relationship with the substrate of the type LiNbO3 (0001) || α-Al2O3 (0001) and LiNbO3 [100] || α-Al2O3 [100] as determined by x-ray pole figure analysis. Transmission electron microscopy indicated the epitaxial films annealed at 400 °C consisted of slightly misoriented ∼5 nm subgrains and of numerous ∼10 nm enclosed pores. The microstructure and orientation development of these films was consistent with a heteroepitaxial nucleation and growth mechanism, in which epitaxial nuclei form at the substrate surface and grow upward into an amorphous and porous intermediate film: Epitaxial films annealed at 700 °C contained larger 150-200 nm subgrains and pinholes. Misorientations between adjacent subgrains appeared to be significantly smaller in films annealed at 700 °C than those in films annealed at 400 °C. Hydrolysis of the alkoxide precursor solution prior to spin coating promoted the development of polycrystalline films on single-crystal sapphire substrates. Infrared spectra and thermal analysis indicated that, independent of the degree of the solution hydrolysis, nucleation of LiNbO3 was immediately preceded by decomposition of an amorphous carbonate intermediate phase.

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

Growth of epitaxial films of sodium potassium tantalate and niobate on single-crystal lanthanum aluminate [100] substrates

2008 ◽  
Vol 23 (12) ◽  
pp. 3281-3287 ◽  
Author(s):  
George H. Thomas ◽  
Eliot D. Specht ◽  
John Z. Larese ◽  
Ziling B. Xue ◽  
David B. Beach
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
Epitaxial Films ◽  
Metal Species ◽  
Gravimetric Analysis ◽  
X Ray Diffraction ◽  
Sodium Potassium ◽  
Potassium Tantalate ◽  
X Ray ◽  
Lanthanum Aluminate

Epitaxial films of sodium potassium tantalate (Na0.5K0.5TaO3, NKT) and sodium potassium niobate (Na0.5K0.5NbO3, NKN) were grown on single-crystal lanthanum aluminate (LAO) (100) (indexed as a pseudo-cubic unit cell) substrates via an all-alkoxide solution (methoxyethoxide complexes in 2-methoxyethanol) deposition route for the first time. X-ray diffraction studies indicated that the onset of crystallization in powders formed from hydrolyzed gel samples was 550 °C. 13C nuclear magnetic resonance studies of solutions of methoxyethoxide complexes indicated that mixed-metal species were formed, consistent with the low crystallization temperatures observed. Thermal gravimetric analysis with simultaneous mass spectrometry showed the facile loss of the ligand (methoxyethoxide) at temperatures below 400 °C. Crystalline films were obtained at temperatures as low as 650 °C when annealed in air. θ-2θ x-ray diffraction patterns revealed that the films possessed c-axis alignment in that only (h00) reflections were observed. Pole-figures about the NKT or NKN (220) reflection indicated a single in-plane, cube-on-cube epitaxy. The quality of the films was estimated via ω (out-of-plane) and φ (in-plane) scans and full-widths at half-maximum (FWHMs) were found to be reasonably narrow (∼1°), considering the lattice mismatch between the films and the substrate.

Epitaxial Growth of Patterned SrBi2Ta2O9 Lines by Channel Stamping

1999 ◽  
Vol 14 (4) ◽  
pp. 1194-1196 ◽  
Author(s):  
Jin Hyeok Kim ◽  
Frederick F. Lange ◽  
Chae-Il Cheon
Keyword(s):  
Spin Coating ◽  
Smooth Surface ◽  
Precursor Solution ◽  
The Novel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Orientation ◽  
Out Of Plane ◽  
Parallel Channels ◽  
Scanning Electron

Patterned epitaxial SrBi2Ta2O9 (SBT) lines with (00l) out-of-plane orientation were grown on a (001) SrTiO3 substrate by the novel “channel stamping” method. Parallel channels in a poly(dimethylsiloxane) stamp were filled with a metalorganic precursor solution by spin coating. After solvent evaporation, the solid precursor within the channels was transferred to the substrate by stamping. Stamped precursor lines were pyrolyzed at 350 °C/1 h and then heated to 850 °C/1 h. It was shown by x-ray diffraction and scanning electron microscopy that patterned SBT lines were epitaxial, had a smooth surface with c-axis out-of-plane orientation, and a single in-plane orientation.

scholarly journals Experimental signatures of nodeless multiband superconductivity in a $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ single crystal

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chanhee Kim ◽  
Dilip Bhoi ◽  
Yeahan Sur ◽  
Byung-Gu Jeon ◽  
Dirk Wulferding ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Zero Magnetic Field ◽  
Anisotropy Ratio ◽  
Strong Temperature Dependence ◽  
Critical Fields ◽  
Band Theory ◽  
Plane Field ◽  
Low Field ◽  
Out Of Plane

AbstractIn order to understand the superconducting gap nature of a $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ 2H-Pd 0.08 TaSe 2 single crystal with $$T_{c} = 3.13 \text { K}$$ T c = 3.13 K , in-plane thermal conductivity $$\kappa $$ κ , in-plane London penetration depth $$\lambda _{\text {L}}$$ λ L , and the upper critical fields $$H_{c2}$$ H c 2 have been investigated. At zero magnetic field, it is found that no residual linear term $$\kappa _{0}/T$$ κ 0 / T exists and $$\lambda _{\text {L}}$$ λ L follows a power-law $$T^n$$ T n (T: temperature) with n = 2.66 at $$T \le \frac{1}{3}T_c$$ T ≤ 1 3 T c , supporting nodeless superconductivity. Moreover, the magnetic-field dependence of $$\kappa _{0}$$ κ 0 /T clearly shows a shoulder-like feature at a low field region. The temperature dependent $$H_{c2}$$ H c 2 curves for both in-plane and out-of-plane field directions exhibit clear upward curvatures near $$T_c$$ T c , consistent with the shape predicted by the two-band theory and the anisotropy ratio between the $$H_{c2}$$ H c 2 (T) curves exhibits strong temperature-dependence. All these results coherently suggest that $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ 2H-Pd 0.08 TaSe 2 is a nodeless, multiband superconductor.

Ion-Beam Assist Nano-Texturing of Films

2007 ◽  
Vol 1020 ◽  
Author(s):  
Vladimir Matias ◽  
Chris Sheehan ◽  
Alp T. Findikoglu
Keyword(s):  
Experimental Design ◽  
Single Crystal ◽  
Ion Beam ◽  
Fabrication Method ◽  
Polycrystalline Metal ◽  
Tape Transport ◽  
Homoepitaxial Growth ◽  
Ion Beam Assisted Deposition ◽  
High Throughput Experimentation ◽  
Out Of Plane

AbstractWe present an ion-beam based fabrication method for growth of single-crystal-like films that does not utilize epitaxy on single crystal substrates. We use ion-beam assisted texturing to obtain biaxial crystalline alignment in a film. This ion-beam assisted deposition (IBAD) texturing can be done on arbitrary, but smooth substrates, including flexible polycrystalline metal tapes. With IBAD texturing of MgO and subsequent homoepitaxial growth we have demonstrated an in-plane mosaic spread FWHM as low as 2° and out-of-plane alignment of 1°. The deposition system we use includes reel-to-reel tape transport for a linear transport of substrate materials through the deposition zones. This allows for high-throughput experimentation via a linear combinatorial experimental design.

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