Thin Film Stress Measurement with a Tunneling Sensor

1998 ◽  
Vol 546 ◽  
Author(s):  
P. Zhang ◽  
R. P. Vinci ◽  
J. C. Bravman ◽  
T. W. Kenny
Keyword(s):  
Thin Film ◽  
Stress Measurement ◽  
Thin Film Deposition ◽  
In Situ Stress ◽  
Film Deposition ◽  
Film Stress ◽  
Stress Monitoring ◽  
Thin Film Stress ◽  
Basic Measurement ◽  
A New Technique

AbstractA new technique of measuring thin film stress with a tunneling sensor is presented. Basic measurement concepts, preliminary results on thin film stress measurement, and fabrication processes for the tunneling stress measurement sensor are described. The feasibility of implementing this technique for in-situ stress monitoring during thin film deposition demonstrated.

scholarly journals Measurements Of Stress Evolution During Thin Film Deposition

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Radius Of Curvature ◽  
Stress Evolution ◽  
Rectangular Array ◽  
Thin Film Stress ◽  
Ccd Detector

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

scholarly journals Measurements of Stress Evolution During Thin Film Deposition

1996 ◽  
Vol 436 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Radius Of Curvature ◽  
Stress Evolution ◽  
Rectangular Array ◽  
Thin Film Stress ◽  
Ccd Detector

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

Using Thin Film Stress for Nanoscaled Sensors

2010 ◽  
Vol 638-642 ◽  
pp. 2028-2033
Author(s):  
Seid Jebril ◽  
Yogendra K. Mishra ◽  
Mady Elbahri ◽  
Lorenz Kienle ◽  
Henry Greve ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hydrogen Adsorption ◽  
Field Effect Transistors ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Special Focus ◽  
Free Standing ◽  
Thin Film Stress

Thin film stress is often seen as an unwanted effect in micro- and nanostructures. Since recent years, we could employ thin film stress as a useful tool to create nanowires. By creating stress at predetermined breaking points, e.g., in microstructured photo resist thin films, cracks occur on the nanoscale in a well defined and reproducible manner [ ]. By using those as a simple mask for thin film deposition, nanowires can be created. More recently this fabrication scheme could be improved by utilizing delamination of the thin film, in order to obtain suitable shadow masks for thin film deposition in vacuum [ ]. Now, these stress based nanowires can be integrated in microelectronic devices and used as field effect transistors or as hydrogen sensors [ ]. For the functional part of the sensor, it was proposed that thin film stress created by hydrogen adsorption in the nanowire is the driving force. In terms of function, thin films can be also applied on free standing nanoscale whiskers or wires to modify their mechanical features or adding additional functionality. As a second example for the utilization of thin film stress, recent experiments on a piezoelectric and magnetostrictive material combination will be presented. These piezoelectric-magnetostrictive nano-composites are potential candidates for novel magnetic field sensors [ ]. In these composites the magnetostriction will be transferred to the piezoelectric component, resulting in a polarization of the piezoelectric material, that can be used as the sensor signal. The results of two different composite layouts will be presented and discussed with a special focus on the comparison between classical macroscopic composites and the novel nanocomposites.

scholarly journals X-Ray Stress Measurement of Carbide in Tool Steel

2005 ◽  
Vol 490-491 ◽  
pp. 281-286
Author(s):  
Masahide Gotoh ◽  
Hajime Hirose ◽  
Toshihiko Sasaki
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Plastic Strain ◽  
Tool Steel ◽  
Physical Vapor Deposition ◽  
Stress Measurement ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
The Relationship

Thin films deposited by physical vapor deposition (PVD) were studied in terms of residual stress by the authors. The final purpose of our study is to evaluate the stress state at the interface between a substrate and a thin film. In this study, JIS-SKH55 tool steel without thin-film deposition was used as the specimen. SKH55 is a dual-phase steel consisting of martensite a’Fe and alloyed carbide M6C2. The specimens were heated to 573K, 798K, 843K and 893K. Recently, the relationship between the misfit of plastic strain and stress obtained by X-ray stress measurement has been proposed by the authors using the Eshelby/Mori-Tanaka model (EMT model). The residual stress and the misfit of plastic strain were determined by X-ray stress measurement using the EMT model. Results showed that as annealing temperature increased, the compressive residual stress remained nearly constant up to about 800K, and decreased above 800K in both phases. The misfit of plastic strain also remained nearly constant up to about 800K, and reached zero above 800K.

Stress and microstructure evolution during initial growth of Pt on amorphous substrates

2000 ◽  
Vol 15 (11) ◽  
pp. 2540-2546 ◽  
Author(s):  
M. A. Phillips ◽  
V. Ramaswamy ◽  
B. M. Clemens ◽  
W. D. Nix
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Ex Situ ◽  
Initial Growth ◽  
Plan View ◽  
Areal Fraction

An understanding of the relationship between stress and the corresponding microstructure at various stages of thin film growth might allow prediction and control of both microstructure and film stress during thin film deposition. In the present study, a combination of in situ curvature measurement and ex situ microstructural characterization was used to make correlations between stress and microstructure for the growth of Pt on SiO2. Plan view transmission electron micrographs of Pt films with average thicknesses ranging from 3 to 35 Å show the evolution of microstructure from isolated islands to a coalesced film, in agreement with models for stress behavior during the early stages of film growth. Quantitative measurements of grain size, island size, and areal fraction covered are extracted from these micrographs and, in conjunction with an island coalescence model, used to calculate the magnitude of the tensile stresses generated during coalescence. The predicted curvature is shown to compare favorably with the measured stresses.

Thin film stress measurement by fiber optic strain gage

2006 ◽  
Vol 494 (1-2) ◽  
pp. 141-145 ◽  
Author(s):  
S.M.M. Quintero ◽  
W.G. Quirino ◽  
A.L.C. Triques ◽  
L.C.G. Valente ◽  
A.M.B. Braga ◽  
...  
Keyword(s):  
Thin Film ◽  
Strain Gage ◽  
Fiber Optic ◽  
Stress Measurement ◽  
Film Stress ◽  
Thin Film Stress

scholarly journals Self-contained in-vacuum in situ thin film stress measurement tool

2018 ◽  
Vol 89 (5) ◽  
pp. 053904 ◽  
Author(s):  
J. Reinink ◽  
R. W. E. van de Kruijs ◽  
F. Bijkerk
Keyword(s):  
Thin Film ◽  
Stress Measurement ◽  
Film Stress ◽  
Measurement Tool ◽  
Thin Film Stress
Sign in / Sign up

Export Citation Format

Share Document