Diamond and Polycrystalline Diamond for MEMS Applications: Simulations and Experiments

1998 ◽  
Vol 546 ◽  
Author(s):  
Tahir Çağin ◽  
Jianwei Che ◽  
Michael N. Gardos ◽  
William A. Goddard
Keyword(s):  
Elevated Temperatures ◽  
Polycrystalline Diamond ◽  
Md Simulations ◽  
Device Fabrication ◽  
Mems Devices ◽  
Diamond Surfaces ◽  
Bearing Materials ◽  
Dependent Potential ◽  
Tribological Characterization ◽  
Silicon Based

AbstractTo date most of the MEMS devices are been based on Silicon. This is due to the technological know-how accumulated on manipulating, machining, manufacturing of Silicon. However, only very few devices involve moving parts. This is because of the rapid wear arising from high friction in these Silicon based systems. Recent tribometric experiments carried out by Gardos on Silicon and polycrystalline diamond show that this rapid wear is caused by a variety of factors, related both to surface chemistry and cohesive energy density of these likely MEMS bearing materials. Therefore, theoretical and tribological characterization of Si and PCD surfaces is essential prior to device fabrication to assure reliable MEMS operation unded various atmospheric environments, especially at elevated temperatures.In this paper, we summarize tribological experiments and theoretical studies of friction and wear processes on diamond surfaces. We studied the atomic friction of diamond (100)-surface employing an extended bond-order-dependent potential for hydrocarbon systems in MD simulations.

scholarly journals Development of a Mobile Analytical Chemistry Workstation Using a Silicon Electrochromatography Microchip and Capacitively Coupled Contactless Conductivity Detector

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 239
Author(s):  
Yineng Wang ◽  
Xi Cao ◽  
Walter Messina ◽  
Anna Hogan ◽  
Justina Ugwah ◽  
...  
Keyword(s):  
Capillary Electrochromatography ◽  
High Efficiency ◽  
Device Fabrication ◽  
Capacitively Coupled ◽  
Packaging Design ◽  
Design And Optimization ◽  
Nanofabrication Technique ◽  
On Chip ◽  
Silicon Based ◽  
Rapid Separations

Capillary electrochromatography (CEC) is a separation technique that hybridizes liquid chromatography (LC) and capillary electrophoresis (CE). The selectivity offered by LC stationary phase results in rapid separations, high efficiency, high selectivity, minimal analyte and buffer consumption. Chip-based CE and CEC separation techniques are also gaining interest, as the microchip can provide precise on-chip control over the experiment. Capacitively coupled contactless conductivity detection (C4D) offers the contactless electrode configuration, and thus is not in contact with the solutions under investigation. This prevents contamination, so it can be easy to use as well as maintain. This study investigated a chip-based CE/CEC with C4D technique, including silicon-based microfluidic device fabrication processes with packaging, design and optimization. It also examined the compatibility of the silicon-based CEC microchip interfaced with C4D. In this paper, the authors demonstrated a nanofabrication technique for a novel microchip electrochromatography (MEC) device, whose capability is to be used as a mobile analytical equipment. This research investigated using samples of potassium ions, sodium ions and aspirin (acetylsalicylic acid).

scholarly journals MEMs from the Nanoscale Up

2007 ◽  
Vol 129 (03) ◽  
pp. 24-29 ◽  
Author(s):  
Arthur C. Ratzel
Keyword(s):  
Leading Edge ◽  
Consumer Products ◽  
Mems Devices ◽  
Science And Engineering ◽  
Gas Damping ◽  
High Shock ◽  
Mems Technology ◽  
Silicon Based ◽  
Development Laboratory

This article discusses growing role of silicon micro-electron-mechanical systems (MEMS) technology in automotive and consumer products, telecommunications, radio-frequency applications, and medical care. The article also highlights that silicon-based MEMS devices must be constructed in clean rooms, such as one at Sandia's Microelectronics Development laboratory. According to engineers, the search for an in-depth understanding of wear mechanisms in dynamic silicon MEMS is expected to drive an ambitious wave of leading-edge research into microscale science and engineering, distinct from that which prevailed at the mesoscale. It has been found that gas damping between MEMS structures and the substrate, within the sealed package, can cause serious nonlinearities. While this doesn't lead to failure in the classic sense, it may make it harder to close a switch. On the plus side, gas damping can provide a cushion that enables a MEMS device to survive surprisingly high shock loads.

scholarly journals A Feasibility Study of Fabrication of Piezoelectric Energy Harvesters on Commercially Available Aluminum Foil

Energies ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2797 ◽  
Author(s):  
Chongsei Yoon ◽  
Buil Jeon ◽  
Giwan Yoon
Keyword(s):  
Energy Harvesting ◽  
Elevated Temperatures ◽  
Aluminum Foil ◽  
Cost Effective ◽  
Device Fabrication ◽  
Point Of View ◽  
Plastic Substrate ◽  
Device Performance ◽  
Piezoelectric Energy ◽  
Energy Harvesting Devices

In this paper, we present zinc oxide (ZnO)-based flexible harvesting devices employing commercially available, cost-effective thin aluminum (Al) foils as substrates and conductive bottom electrodes. From the device fabrication point of view, Al-foils have a relatively high melting point, allowing for device processing and annealing treatments at elevated temperatures, which flexible plastic substrate materials cannot sustain because of their relatively low melting temperatures. Moreover, Al-foil is a highly cost-effective, commercially available material. In this work, we fabricated and characterized various kinds of multilayered thin-film energy harvesting devices, employing Al-foils in order to verify their device performance. The fabricated devices exhibited peak-to-peak output voltages ranging from 0.025 V to 0.140 V. These results suggest that it is feasible to employ Al-foils to fabricate energy-efficient energy harvesting devices at relatively high temperatures. It is anticipated that with further process optimization and device integration, device performance can be further improved.

scholarly journals A silicon-based surface code quantum computer

2016 ◽  
Vol 2 (1) ◽  
Author(s):  
Joe O’Gorman ◽  
Naomi H Nickerson ◽  
Philipp Ross ◽  
John JL Morton ◽  
Simon C Benjamin
Keyword(s):  
Quantum Computing ◽  
Solid State ◽  
Quantum Computer ◽  
Fault Tolerant ◽  
Device Fabrication ◽  
Impurity Atoms ◽  
Dipole Interactions ◽  
Total Phase ◽  
Surface Code ◽  
Silicon Based

Abstract Individual impurity atoms in silicon can make superb individual qubits, but it remains an immense challenge to build a multi-qubit processor: there is a basic conflict between nanometre separation desired for qubit–qubit interactions and the much larger scales that would enable control and addressing in a manufacturable and fault-tolerant architecture. Here we resolve this conflict by establishing the feasibility of surface code quantum computing using solid-state spins, or ‘data qubits’, that are widely separated from one another. We use a second set of ‘probe’ spins that are mechanically separate from the data qubits and move in and out of their proximity. The spin dipole–dipole interactions give rise to phase shifts; measuring a probe’s total phase reveals the collective parity of the data qubits along the probe’s path. Using a protocol that balances the systematic errors due to imperfect device fabrication, our detailed simulations show that substantial misalignments can be handled within fault-tolerant operations. We conclude that this simple ‘orbital probe’ architecture overcomes many of the difficulties facing solid-state quantum computing, while minimising the complexity and offering qubit densities that are several orders of magnitude greater than other systems.

Integration of Electroactive Polymers in MEMS Ultrasonic Sensors

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000643-000670
Author(s):  
Michael Kranz ◽  
Michael Whitley ◽  
Sharon Sanchez ◽  
Michael Allen
Keyword(s):  
Acoustic Waves ◽  
Elevated Temperatures ◽  
Electroactive Polymers ◽  
Mems Devices ◽  
Multiple Systems ◽  
Electroactive Films ◽  
Machine Failure ◽  
Acoustic Emission Sensors ◽  
Institute Of Technology ◽  
Electrical Impulses

The U.S. Army AMRDEC, Stanley Associates, and the Georgia Institute of Technology are developing spectrally sensitive acoustic emission sensors for the detection of various phenomena of interest in Army missiles and assets. Multiple systems would benefit from monitoring the acoustic spectrum and identifying signatures of interest. These would include monitoring sounds external to Unattended Ground Sensors, looking for specific sounds associated with machine failure in a condition-based maintenance scenario, and identifying items that are impacting each other. Potential device designs employ electroactive polymers to convert acoustic waves into electrical impulses. Many electroactive polymers are, however, not compatible with standard MEMS processing, particularly at elevated temperatures. Piezoelectric films, such as PVDF, require stretching and poling processes to orient the crystal structure. Electret films also require poling to create a permanent polarization, plus discharge occurs at relatively low-temperatures. These types of films are difficult to integrate directly into MEMS devices because of these incompatible processes. The films are therefore added using post-fabrication bonding and assembly processes, thus reducing design flexibility and increasing cost. This paper will present techniques being developed to integrate electroactive polymers directly in MEMS sensors as opposed to performing post-fabrication assembly of electroactive films into sensor structures.

Novel design of silicon-based lithium-ion battery anode for highly stable cycling at elevated temperature

2015 ◽  
Vol 3 (3) ◽  
pp. 1325-1332 ◽  
Author(s):  
Hyungmin Park ◽  
Sinho Choi ◽  
Sungjun Lee ◽  
Gaeun Hwang ◽  
Nam-Soon Choi ◽  
...  
Keyword(s):  
High Performance ◽  
Elevated Temperatures ◽  
Coating Layer ◽  
Lithium Ion ◽  
Aluminum Trifluoride ◽  
Silicon Based ◽  
Novel Design ◽  
Battery Anode ◽  
Silicon Particles ◽  
Double Coating

We demonstrate a facile method for synthesizing silicon particles with a double coating layer consisting of aluminum trifluoride and amorphous carbon to use as an anode material for high-performance lithium-ion batteries at elevated temperatures.

Infrared Emission Spectra of Indium Phosphide at Elevated Temperatures

1997 ◽  
Vol 502 ◽  
Author(s):  
H. Rogne ◽  
P. J. Timans ◽  
H. Ahmed
Keyword(s):  
Elevated Temperatures ◽  
Semiconductor Device ◽  
Thermal Emission ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Device Fabrication ◽  
Optical Measurements ◽  
Optical Data ◽  
Monitoring And Control ◽  
Process Monitoring And Control

ABSTRACTProcess monitoring and control during semiconductor device fabrication frequently relies on good knowledge of the optical properties of the substrate wafer and the surface coatings. However, these optical data are often unavailable, and as a consequence errors arise in pyrometric temperature measurements, as well as in thermal modelling of heating cycles. In this study, isothermal electron beam heating has been combined with in situ optical measurements to record thermal emission spectra of undoped InP specimens from 347 to 478°C, at wavelengths between I and 9 μm. The absorption coefficient was deduced from the emission spectra and reveals information about the temperature dependence of the infrared absorption mechanisms in InP.

Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure

2014 ◽  
Vol 1693 ◽  
Author(s):  
Feng Zhao ◽  
Allen Lim ◽  
Zhibang Chen ◽  
Chih-Fang Huang
Keyword(s):  
Single Crystal ◽  
Electronic Devices ◽  
Device Fabrication ◽  
Flat Band ◽  
Harsh Environment ◽  
Mems Devices ◽  
Etching Technique ◽  
Epitaxial Structure ◽  
Single Crystal Sic ◽  
P Type

ABSTRACTIn this paper, single crystal 4H-SiC MEMS devices with n-p-n epitaxial structure was fabricated. A dopant-selective photoelectrochemical etching technique was applied to etch the sacrificial p-type SiC layer to release n-type SiC suspended structures on n-type SiC substrate. The selective etching was achieved by applying a bias which employs the different flat-band potentials of n-SiC and p-SiC in KOH solution. Such MEMS devices have the potential to fully exploit the superior properties of single crystal SiC for harsh environment operation, as well as mature epitaxial growth and device fabrication of 4H-SiC. The n-p-n structure, together with the previously reported p-n structure, extends the capability of monolithic integration between MEMS with electronic devices and circuits on SiC platform.

scholarly journals Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

2007 ◽  
Vol 1039 ◽  
Author(s):  
Ken Haenen ◽  
Andrada Lazea ◽  
Vincent Mortet ◽  
Jan D'Haen ◽  
Peter Geithner ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Diamond Surfaces ◽  
Cvd Growth ◽  
Oriented Polycrystalline ◽  
Electron Back Scattered Diffraction

AbstractPhosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation was obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.

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