Pulsed Plasma Polymerizations: Film Chemistry Control and Applications

1998 ◽  
Vol 544 ◽  
Author(s):  
Yuliang WU ◽  
Licheng M. Han ◽  
Brett E. Thomes ◽  
Haibo Qiu ◽  
Charles R. Savage ◽  
...  

AbstractFilm chemistry control issues, as well as key properties of polymers synthesized under pulsed plasma conditions, are discussed. Distinctions between pulsed and continuous wave plasmas are examined, particularly as they relate to differences in the energy efficiency of film formation rates and to the range of available power inputs. Film stabilities, with special reference to polymers formed under very low power input conditions, are considered. Finally, selected applications involving use of the inherently high film chemistry controllability made available by the variable duty cycle pulsed plasma technique are described.

1997 ◽  
Vol 484 ◽  
Author(s):  
D. R. Chamberlin ◽  
O. D. Dubon ◽  
E. Bründermann ◽  
E. E. Haller ◽  
L. A. Reichertzl ◽  
...  

AbstractWe report on the performance of far-infrared hole inversion lasers made from germanium doped with the multivalent acceptors beryllium and copper. Commonly used hole inversion lasers are made from Czochralski-grown Ga-doped Ge single crystals and show emission from 75 to 125 and 170 to 300 μm. The emission gap between 125 and 170 μm, originating from absorption of the far-infrared light due to internal hole transitions in the neutral Ga acceptor, is absent in the new Be and Cu-doped lasers. We also find a mechanism for inversion depopulation through neutral Ga which hinders lasing at low electric fields. This same mechanism is shown to cause population inversion in the Be-doped laser and allows lasing at lower fields. This reduces the power input into the germanium crystal and has allowed us to increase the duty cycle up to 2.5% which is one order of magnitude higher than the maximum duty cycle reported for Ga-doped Ge lasers. These new lasers may offer an opportunity for achieving continuous-wave operation.In addition we have performed preliminary studies on the effect of uniaxial stress on the lasing in these new materials. We demonstrate that small uniaxial stress increases laser action in Ge:Cu. We propose that this is due to an increased population inversion because under these conditions two separate mechanisms cause heavy holes to enter the light hole band.


2020 ◽  
Vol 32 (4) ◽  
pp. 042017
Author(s):  
M. S. Swapna ◽  
A. S. Ashik ◽  
R. A. Krishnanunni ◽  
V. P. N. Nampoori ◽  
S. Sankararaman

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 805
Author(s):  
Shi Zuo ◽  
Jianzhong Zhao ◽  
Yumei Zhou

This article presents a low power digital controlled oscillator (DCO) with an ultra low power duty cycle correction (DCC) scheme. The DCO with the complementary cross-coupled topology uses the controllable tail resistor to improve the tail current efficiency. A robust duty cycle correction (DCC) scheme is introduced to replace self-biased inverters to save power further. The proposed DCO is implemented in a Semiconductor Manufacturing International Corporation (SMIC) 40 nm CMOS process. The measured phase noise at room temperature is −115 dBc/Hz at 1 MHz offset with a dissipation of 210 μμW at an oscillating frequency of 2.12 GHz, and the resulin figure-of-merit is s −189 dBc/Hz.


Technologies ◽  
2021 ◽  
Vol 9 (1) ◽  
pp. 22
Author(s):  
Eljona Zanaj ◽  
Giuseppe Caso ◽  
Luca De Nardis ◽  
Alireza Mohammadpour ◽  
Özgü Alay ◽  
...  

In the last years, the Internet of Things (IoT) has emerged as a key application context in the design and evolution of technologies in the transition toward a 5G ecosystem. More and more IoT technologies have entered the market and represent important enablers in the deployment of networks of interconnected devices. As network and spatial device densities grow, energy efficiency and consumption are becoming an important aspect in analyzing the performance and suitability of different technologies. In this framework, this survey presents an extensive review of IoT technologies, including both Low-Power Short-Area Networks (LPSANs) and Low-Power Wide-Area Networks (LPWANs), from the perspective of energy efficiency and power consumption. Existing consumption models and energy efficiency mechanisms are categorized, analyzed and discussed, in order to highlight the main trends proposed in literature and standards toward achieving energy-efficient IoT networks. Current limitations and open challenges are also discussed, aiming at highlighting new possible research directions.


2015 ◽  
Vol 91 (5) ◽  
pp. 1485-1492 ◽  
Author(s):  
Karen Gómez-Pazarín ◽  
Celia Flores ◽  
Tania Castillo ◽  
Jochen Büchs ◽  
Enrique Galindo ◽  
...  

2016 ◽  
Vol 108 (1) ◽  
pp. 011106 ◽  
Author(s):  
Lei Dong ◽  
Chunguang Li ◽  
Nancy P. Sanchez ◽  
Aleksander K. Gluszek ◽  
Robert J. Griffin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document