Effects of the Purity of Metalorganic Sources on the Electrical Properties of Pb(ZrTi)O3 Thin Films by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
M. Shimizu ◽  
M. Yoshida ◽  
H. Fujisawa ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Electric Fields ◽  
Impurity Effects ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Current Densities ◽  
Fatigue Characteristics ◽  
The Difference ◽  
Ionic Movement

AbstractEffects of the purity of metalorganic Pb,Zr and Ti precursors (Pb(C2H5)4, Zr(O-tC4H9)4 and Ti(O-iC3 H 7)4) on the electrical properties of Pb(ZrTi)O3 (PZT) thin films prepared by MOCVD were investigated. Generally, PZT thin films prepared using the high purity Pb source precursor had a tendency to show better current densities, breakdown electric fields and switching fatigue characteristics than those of PZT films prepared using the low purity precursor. On the other hand, distinct purity effects of Zr and Ti source precursors were not observed. These experimental results suggest that some types of impurities play important roles as donors and acceptors and influence ionic movement and space charge. At this stage, it is not well understood which impurities contained in precursors play important roles and what is the difference in the impurity effects between Pb, and Zr and Ti precursors.

Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Masaru Shimizu ◽  
Tadashi Shiosaki
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Crystalline Structure ◽  
Scaling Up ◽  
Memory Device ◽  
Processing Temperature ◽  
Pzt Films ◽  
Device Applications ◽  
Fatigue Characteristics ◽  
Plzt Thin Films

ABSTRACTThe advantages of MOCVD for the growth of Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were discussed, with emphasis on the controllability of film composition, crystalline structure and electrical properties. The possibilities of lowering the processing temperature and scaling up the process to commercial-based production were investigated. The preparation of PZT films and electrodes with a specific focus on improving the I-V and fatigue characteristics was also investigated.

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF Pb(Zr0.65Ti0.35)O3 THIN FILMS GROWN ON OXIDE SUBSTRATES

2010 ◽  
Vol 03 (04) ◽  
pp. 295-298
Author(s):  
JINGSONG LIU ◽  
HUIQIN LI ◽  
GUANGLIANG XU ◽  
LINHONG CAO
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Loss Tangent ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Pzt Thin Films ◽  
Transmission Electron ◽  
Oxide Substrates ◽  
Pzt Films

Pb(Zr0.65Ti0.35)O3 (PZT) thin films were deposited on SrRuO3 (SRO) buffer layer coated LaAlO3 (LAO) substrates by RF sputtering method. X-ray diffraction analyses indicate that the PZT thin films show epitaxial orientation and the in-plane epitaxial relationship between film and substrate is deduced as (001)[010] PZT ‖(001)[010] SRO ‖(001)[010] LAO . Despite the Zr -richcomposition, observations using transmission electron microscopy reveal that the PZT thin films exhibited tetragonal phase, which was due to the clamping effect of the substrates. The clamping effecton the electrical properties, especially on the dielectric properties, was evaluated. Ferroelectric measurements show that PZT films with LAO/SRO substrates were fatigue-free. However, the test of dielectric property dependences on temperature manifests a relatively low Curie temperature of the PZT films. The loss tangent decreasedwith increase intemperature. Owing to the release of clamping stress, the loss tangent decreased dramatically while the temperature was approaching the phase transition temperature of PZT thin films.

scholarly journals Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Pzt Thin Films ◽  
Structural And Electrical Properties

Electrooptic Properties of Pzt thin Films for Image Storage Applications

1991 ◽  
Vol 243 ◽  
Author(s):  
D. Dimos ◽  
R.W. Schwartz
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Ferroelectric Films ◽  
Image Storage ◽  
Pzt Thin Films ◽  
Hysteresis Behavior ◽  
Pzt Films ◽  
Induced Changes

AbstractThe photocurrent responses, photo-induced changes in hysteresis behavior, and electrooptic (birefringence) effects of sol-gel derived PZT films have been characterized as part of an effort to evaluate ferroelectric films for image storage and processing applications.

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Effect of Lead Content on the Microstructure and Electrical Properties of Sol-Gel PZT Thin Films

2002 ◽  
Vol 271 (1) ◽  
pp. 51-56 ◽  
Author(s):  
P. V. Burmistrova ◽  
A. S. Sigov ◽  
A. L. Vasiliev ◽  
K. A. Vorotilov ◽  
O. M. Zhigalina
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Lead Content ◽  
Pzt Thin Films
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