MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Masaru Shimizu ◽  
Tadashi Shiosaki
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Crystalline Structure ◽  
Scaling Up ◽  
Memory Device ◽  
Processing Temperature ◽  
Pzt Films ◽  
Device Applications ◽  
Fatigue Characteristics ◽  
Plzt Thin Films

ABSTRACTThe advantages of MOCVD for the growth of Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were discussed, with emphasis on the controllability of film composition, crystalline structure and electrical properties. The possibilities of lowering the processing temperature and scaling up the process to commercial-based production were investigated. The preparation of PZT films and electrodes with a specific focus on improving the I-V and fatigue characteristics was also investigated.

Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by Mocvd

1995 ◽  
Vol 401 ◽  
Author(s):  
Masaru Shimizu ◽  
Tadashi Shiosaki
Keyword(s):  
Thin Films ◽  
Memory Device ◽  
Initial Growth ◽  
Epitaxial Relationship ◽  
Pzt Thin Films ◽  
Atomic Force ◽  
Device Applications ◽  
Switching Characteristics ◽  
Plzt Thin Films ◽  
Relationship Of

AbstractUsing the MOCVD process to produce Pb(Zr, Ti)O3 (PZT) thin films, control of the film stoichiometry and crystalline phase was achieved. The PZT films obtained showed good step coverage, 67%. Uniform PZT and PLZT thin films with a variation of film thickness of less than ±1.5% were successfully obtained on a 6–8 inch silicon wafer. For the evaluation of the crystallinity and epitaxial relationship of the PZT thin films, the total reflection X-ray diffraction (TRXD) method was used for the first time. Using TRXD, the in-plane orientations of PZT and Pt in PZT/Pt/MgO were evaluated. The growth mechanism of PbTiO3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM). The switching characteristics of PZT capacitors using Ir and IrO2 electrodes for memory device applications were also investigated and a PZT capacitor with no fatigue up to a switching cycle of 1011 was obtained.

Effects of the Purity of Metalorganic Sources on the Electrical Properties of Pb(ZrTi)O3 Thin Films by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
M. Shimizu ◽  
M. Yoshida ◽  
H. Fujisawa ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Electric Fields ◽  
Impurity Effects ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Current Densities ◽  
Fatigue Characteristics ◽  
The Difference ◽  
Ionic Movement

AbstractEffects of the purity of metalorganic Pb,Zr and Ti precursors (Pb(C2H5)4, Zr(O-tC4H9)4 and Ti(O-iC3 H 7)4) on the electrical properties of Pb(ZrTi)O3 (PZT) thin films prepared by MOCVD were investigated. Generally, PZT thin films prepared using the high purity Pb source precursor had a tendency to show better current densities, breakdown electric fields and switching fatigue characteristics than those of PZT films prepared using the low purity precursor. On the other hand, distinct purity effects of Zr and Ti source precursors were not observed. These experimental results suggest that some types of impurities play important roles as donors and acceptors and influence ionic movement and space charge. At this stage, it is not well understood which impurities contained in precursors play important roles and what is the difference in the impurity effects between Pb, and Zr and Ti precursors.

Electrical properties of sol-gel processed PLZT thin films

1994 ◽  
Vol 29 (24) ◽  
pp. 6599-6603 ◽  
Author(s):  
J. M. Kim ◽  
D. S. Yoon ◽  
K. No
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Plzt Thin Films

Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

Sign in / Sign up

Export Citation Format

Share Document