Metallorganic Chemical Vapor Deposition of Ir Films With Iridium Acetylacetonate and Carbonyl Precursors

1998 ◽  
Vol 541 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
K. Smith ◽  
J. G. Ekerdt ◽  
R. L. Hance ◽  
...  

AbstractIridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy reveals that iridium tris-acetylacetonate and dicarbonylacetylactonato iridium have high thermal stability and sublime at 200 and 100 °C in vacuum, respectively. Iridium carbonyl decomposes upon sublimation at temperatures above 120 °C. Pure CVD Ir films were obtained using iridium carbonyl; however, carbon is incorporated into the iridium films with the iridium trisacetylacetonate and dicarbonylacetylactonato iridium precursors unless a reactive gas, such as oxygen is co-dosed. Co-dosed oxygen also increases the film deposition rate and significantly decreases the film growth temperatures. Particles were found on the films grown with iridium carbonyl between 280 to 400 °C, indicating that gas phase nucleation occurred during deposition.

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  

1988 ◽  
Vol 135 (9) ◽  
pp. 2378-2379 ◽  
Author(s):  
Z. M. Qian ◽  
H. Michiel ◽  
A. Van Ammel ◽  
J. Nijs ◽  
R. Mertens

1986 ◽  
Vol 1 (3) ◽  
pp. 420-424 ◽  
Author(s):  
T.R. Jervis ◽  
L.R. Newkirk

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.


1995 ◽  
Vol 410 ◽  
Author(s):  
Michelle T. Schulberg ◽  
Mark D. Allendorf ◽  
Duane A. Outka

ABSTRACTSince NH3 is an important component of TiN chemical vapor deposition (CVD) processes, understanding the NH3/TiN surface interaction is crucial to developing a model for the overall reaction. Temperature programmed desorption experiments show that NH3 adsorbs molecularly on amorphous TiN surfaces. Chemisorption occurs at only ∼5% of the surface sites, with an activation energy for desorption of 24 kcal/mol. The sticking probability into this state is 0.06 at 100 K. In addition, NH3 adsorbs with high probability into a multilayer state with an activation energy for desorption of 7.3 kcal/mol, similar to that found in other systems. NH3 does not dissociate on TiN. Under CVD conditions, however, the reactivity of NH3 on TiN may increase and surface reactions may play a part in film growth.


2000 ◽  
Vol 211 (1-4) ◽  
pp. 343-346 ◽  
Author(s):  
A.N Vorob'ev ◽  
S.Yu Karpov ◽  
A.I Zhmakin ◽  
A.A Lovtsus ◽  
Yu.N Makarov ◽  
...  

1999 ◽  
Vol 14 (11) ◽  
pp. 4345-4350
Author(s):  
I. A. Rauf ◽  
R. Siemsen ◽  
M. Grunwell ◽  
R. F. Egerton ◽  
M. Sayer

A study of the electrical resistivity and microstructure of thin copper films deposited by low-pressure chemical vapor deposition from copper (I) hexafluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. Evidence for the nucleation of solid copper in the gas phase at substrate temperatures of about 250 °C is presented. A process to predict the effects of gas-phase nucleation and growth on the electrical resistivity of the resulting film is discussed.


1988 ◽  
Vol 129 ◽  
Author(s):  
Tongsan D. Xiao ◽  
Peter R. Strutt

ABSTRACTThe synthesis of Ge-Se deposits has been demonstrated by using continuous wave CO2 laser excited reactions of GeC14 and Se2Cl2 precursors, each transported in an argon carrier gas. The deposited Ge-Se layers are rich in Ge with a composition of 70% of Ge and 30% of Se. Microstructural examinations reveal that the microstructure consists of amorphous Ge-Se particles ranging in diameter from 2000 Å to 7000 Å. Suggestions are made for the possible mechanisms that might occur during film deposition including, pyrolytic reactions, multiphoton dissociations, and Volmer-Weker film growth.


Sign in / Sign up

Export Citation Format

Share Document