Irradiation-Enhanced Diffusion in Metallic Glasses

1998 ◽  
Vol 540 ◽  
Author(s):  
T. Schuler ◽  
P. Scharwaechter ◽  
W.F.J. Frank
Keyword(s):  
Point Defects ◽  
Metallic Glasses ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Radiotracer Technique ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Beam Sputtering ◽  
Diffusion Mechanisms ◽  
Dynamics Simulations

AbstractThe influence of irradiation with particles (H+, He+, 15N+) on the self-diffusion in relaxed metallic glasses (59Fe in Fe91Zr9, 59Fe in Co58Fe5Ni10Si11B16, 95Zr in Fe24Zr76) has been investigated by means of the radiotracer technique using ion-beam sputtering for serial sectioning of the specimens. Combination of the results of these experiments with accompanying molecular-dynamics simulations not only leads to an understanding of a novel phenomenon of irradiation-enhanced diffusion observed on these materials, but also confirms and refines our previous view that, in the absence of irradiation, diffusion in relaxed metallic glasses occurs by collective diffusion mechanisms not involving intrinsic point defects as diffusion vehicles.

Self-Diffusion in Magnetron-Sputtered Nanocrystalline Fe Films

2010 ◽  
Vol 11 ◽  
pp. 13-18 ◽  
Author(s):  
S. Chakravarty ◽  
U. Tietze ◽  
D. Lott ◽  
M. Horisberger ◽  
Jochen Stahn ◽  
...  
Keyword(s):  
Point Defects ◽  
Isothermal Annealing ◽  
Diffusion Length ◽  
Ion Beam ◽  
Neutron Reflectometry ◽  
Time Dependent ◽  
Ion Beam Sputtering ◽  
Self Diffusion ◽  
Good Accordance ◽  
Beam Sputtering

Self-diffusion in magnetron sputtered nanocrystalline Fe films was investigated by neutron reflectometry on [natFe(10 nm)/57Fe(5 nm)]20 isotope multilayers between 310 and 510°C. The determined diffusivities corresponding to diffusion length between 0.8 – 2.1 nm are time dependent and decrease by more than two orders of magnitude during isothermal annealing. This behaviour can be attributed due to the annihilation of frozen-in point defects, formed during sputtering. For very long annealing times of more than 8 days the diffusivities above 400°C are in good accordance with the volume diffusivities on single crystals given in the literature. However, at temperatures below 400°C the diffusivities are higher than extrapolated literature data, indicating that defect annihilation is still an ongoing process. Furthermore, a comparison of diffusivities obtained for nanocrystalline Fe films prepared by magnetron sputtering and ion beam sputtering, respectively, is presented and discussed.

Point Defects in Sc2O3 Thin Films by Ion Beam Sputtering

2013 ◽  
Author(s):  
P. F. Langston ◽  
E. Krous ◽  
D. Schiltz ◽  
Dinesh Patel ◽  
L. Emmert ◽  
...  
Keyword(s):  
Thin Films ◽  
Point Defects ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Point defects in Sc2O3 thin films by ion beam sputtering

2014 ◽  
Vol 53 (4) ◽  
pp. A276 ◽  
Author(s):  
P. F. Langston ◽  
E. Krous ◽  
D. Schiltz ◽  
D. Patel ◽  
L. Emmert ◽  
...  
Keyword(s):  
Thin Films ◽  
Point Defects ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Structural Investigation of the Silver—Polyimide Interface by Cross—Sectional Ten and Ion—Beam Sputtering

1990 ◽  
Vol 203 ◽  
Author(s):  
A. Foitzik ◽  
F. Faupel
Keyword(s):  
Structural Investigation ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Radiotracer Technique ◽  
Cross Sectional ◽  
Ag Particles ◽  
Beam Sputtering ◽  
Ag Clusters

ABSTRACTWhen metals are deposited on polymers at low rates and elevated temperatures extended and non—uniform interfaces may form, the structural investigation of which requiresspecial techniques. In this paper the morphology of the silver—PMDA—ODA boundary formed during vapor deposition of the metal at 360 ºC has been investigated by means of cross—section TEM and a radiotracer technique in combination with ion—beam sputtering (IBS) for depth profiling. Ag was found to form clusters at the interface, but nearly spherical Ag particles up to diameters as large as 28 nm were also observed within the bulk of the polymer. The formation of Ag clusters is also reflected in the depth profiles, which, in addition, provide direct evidence for the diffusion o; singel Ag atoms deep into the polyimide. Diffusivities in the range of 10–21 – 10–18 m/s were determined for 300 ºC< T < 400 ºC. The Arrhenius plot is curved in accordance with a free—volume mechanism of diffusion. Cross—sectional TEM and low—energyIBS—depth profiling turned out to be an ideal combination for the investigation of extended metal—polymer interfaces.

Diffusion of Titanium and Nickel in B2 NiTi

2009 ◽  
Vol 289-292 ◽  
pp. 377-382 ◽  
Author(s):  
Sergiy V. Divinski ◽  
Ivo Stloukal ◽  
Lubomir Kral ◽  
Christian Herzig
Keyword(s):  
Ion Beam ◽  
Diffusion Mechanism ◽  
Ti Alloy ◽  
Ordered Structure ◽  
Ion Beam Sputtering ◽  
Radiotracer Technique ◽  
Beam Sputtering ◽  
Exponential Factors ◽  
Parallel Grinding ◽  
Penetration Depths

Diffusion of both titanium and nickel was measured in the near stoichiometric Ni-49.4at.%Ti alloy with the B2 ordered structure. The radiotracer technique and the 44Ti and 63Ni isotopes were applied in the temperature interval from 900 to 1300 K. The penetration profiles were determined by precision parallel grinding or by ion beam sputtering at larger and smaller penetration depths, respectively. Titanium and nickel diffusivities were found to follow linear Arrhenius dependencies with the pre-exponential factors of 2.710-7 and 4.710-9 m2/s and the activation enthalpies of 205 and 143 kJ/mol, respectively. A vacancy mediated diffusion mechanism is suggested to provide diffusion of both nickel and titanium in the compound NiTi.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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