Deposition of Thin Insulating films by Plasma Enhanced CVD

1985 ◽  
Vol 54 ◽  
Author(s):  
G. Lucovsky ◽  
P. D. Richard ◽  
D. V. Tsu ◽  
R. J. Markunas
Keyword(s):  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Active Species ◽  
Plasma Region ◽  
Plasma Enhanced Cvd ◽  
Insulating Films ◽  
Precursor Molecules ◽  
Substrate Temperatures ◽  
Low Temperature Process

ABSTRACTWe discuss a new low temperature process for the deposition of electronic quality thin films of silicon oxide and nitride. In contrast to conventional plasma enhanced chemical vapor deposition [PECVD], this process involves the remote excitation of one of the gas reactants followed by the extraction of the active species out of the plasma region where they react to generate precursor molecules. The precursors undergo a CVD reaction at a heated substrate to form the desired thin film. The process is called remote PECVD [RPECVD]. Insulators produced in this way show significant reductions in the incorporation of impurity groups such as SiH and SiOH relative to films grown by the PECVD process at the same substrate temperatures.

Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 98 ◽  
Author(s):  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Silicon Oxides ◽  
Oh Groups ◽  
Plasma Enhanced Cvd ◽  
Cvd Method ◽  
Sioh Group

ABSTRACTWe have deposited a range of silicon oxides by the Remote Plasma Enhanced CVD method. By varying gas mixtures and/or substrate temperature, it is possible to deposit films that are essentially stoichiometric SiO_, Si-deficient oxides which have OH groups but no SiH and Si-rich oxides which have SiH groups and no OH. This paper addresses three issues : (1) the nature of the infrared vibrations associated with the SiH and SiOH groups; (2) the use of D for H substitutions to study the vibrations in (1); and (3) the chemical origin of the SiOH group in the Si-deficient films.

Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD

1987 ◽  
Vol 105 ◽  
Author(s):  
D. V. Tsu ◽  
G. N. Parsons ◽  
G. Lucovsky ◽  
M. W. Watkins
Keyword(s):  
Silicon Oxide ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Plasma Region ◽  
Remote Plasma ◽  
Silicon Oxides ◽  
Hydrogenated Silicon ◽  
Plasma Enhanced Cvd ◽  
Amorphous Hydrogenated Silicon ◽  
Wide Range

AbstractThis paper describes Optical Emission Spectrocopy (OES) and Mass Spectrometry (MS) studies of the plasma region in the Remote Plasma Enhanced Chemical Vapor Deposition (PECVD) of amorphous hydrogenated silicon (a-Si:H) and silicon oxide thin films. In Remote PECVD, only the O2/He mixture is plasma excited, silane is introduced into the deposition chamber well below the plasma region. Deposition of films has been studied over a wide range of relative He and O2flows, between 100% He and 100% O2. The incorporation of SiH in the oxides derives from the same mechanism as the deposition of a-Si:H, i.e., a metastable He induced fragmentation of silane.

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition

2018 ◽  
Vol 924 ◽  
pp. 100-103 ◽  
Author(s):  
Örjan Danielsson
Keyword(s):  
Vapor Deposition ◽  
Systematic Approach ◽  
Scale Up ◽  
Chemical Vapor ◽  
Active Species ◽  
Complex Nature ◽  
Modeling Tools ◽  
Reactor Configuration ◽  
Chemical Models ◽  
Experimental Findings

Understanding the chemistry in CVD of SiC is important to be able to control, improve and scale up the process to become industrially competitive. A thorough understanding have so far been difficult to achieve due to the complex nature of the process. Through modeling tools, and a systematic approach when constructing the chemical models, new insights to the SiC CVD chemistry can be obtained. Using a general model that is independent on the choice of precursors and reactor configuration, and by coupling modeling results to experimental findings, we here show that SiCl2 and SiH2 previously suggested as the main silicon bearing growth species in the chlorinated and standard chemistries, respectively, does not contribute significantly to the SiC growth, and that the main active species are C2H2, CH3, Si, and SiCl.

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

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