Interfacial Structure of In/Pt/GaAs Heterojunction Ohmic Contacts
Keyword(s):
X Ray
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ABSTRACTGraded heterojunction InGaAs ohmic contacts to n-GaAs have been prepared which show improved electrical and morphological properties compared with other diffused contacts. The improvements result primarily from the use of a thin 400 A Pt layer between the 4000 Â In layer and the substrate to control the reaction of the In and the GaAs. A study of chemically etched samples using energy dispersive x-ray (EDX) analysis has revealed the formation of a smooth In Ga, As heterojunction interface. Evidence is also presented that the heterojunction regions are epitaxial. A smooth, uniform interface of this type is not formed in other diffused contact systems, such as In/GaAs and Ni/Au-Ge/GaAs.
2014 ◽
Vol 20
(5)
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pp. 1534-1543
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2013 ◽
Vol 19
(S2)
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pp. 1192-1193
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