Formation Of Stacking Fault Tetrahedra During Epitaxial Growth of Silicon and Germanium-Silicon Layers on {111} Silicon Substrates

1985 ◽  
Vol 54 ◽  
Author(s):  
D. Brasen ◽  
S. Nakahara ◽  
J. C. Bean
Keyword(s):  
Molecular Beam ◽  
Stacking Fault ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra ◽  
Local Stresses ◽  
Silicon And Germanium ◽  
Germanium Silicon

ABSTRACTTransmission electron microscopy was used to characterize defects formed in silicon (Si) and germanium-silicon (Ge-Si) alloy layers grown sequentially by molecular-beam epitaxy (MBE) on {111} Si substrates. Stacking fault tetrahedra (SFT) were found to form in these epitaxial layers. In addition, the apex of the SFT are seen to be pointing down toward the Si substrate, with most of the SFT tips converging exactly at the Si/Si and the Ge-Si/Si interfaces. Diffraction contrast experiments using various two-beam conditions have shown that the stacking faults bounding the SFT are of intrinsic (vacancy) type. In the case of a Si layer on the Si substrate, it is reasoned that the SFT are caused by impurities on the surface of the Si substrate prior to deposition. However, in the Ge-Si layer, it is believed that the formation of the S FT is due to local stresses caused by the structural ordering/phase separation of the Ge atoms.

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

Observation of Open-Ended Stacking Fault Tetrahedra in Si0.85Ge0.15 Grown on V-Grooved (001) Si and Planar (111) Si Substrates

1993 ◽  
Vol 319 ◽  
Author(s):  
David J. Howard ◽  
David C. Paine
Keyword(s):  
Chemical Vapor ◽  
Stacking Fault ◽  
Line Pattern ◽  
Plan View ◽  
Thermal Chemical Vapor Deposition ◽  
Si Substrates ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra ◽  
Planar Substrates ◽  
Tem Transmission Electron Microscopy

AbstractA new strain relief mechanism was observed in thin films of Si0.85Ge0.15 grown by RTCVD (rapid thermal chemical vapor deposition) on patterned (001) and planar (111) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [110] direction where the walls of the grooves were the {111} crystal planes lying in the [110] zone. Cross-section and plan-view TEM (transmission electron microscopy) studies revealed the presence of open ended stacking fault tetrahedra in strained-layer Si0.85Ge0.15 grown both on (111) Si wafers and the {111} sidewalls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on non-planar substrates.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

scholarly journals Magnetic Characteristics of Mn-Implanted GaN Nanorods Followed by Thermal Annealing

2012 ◽  
Vol 2012 ◽  
pp. 1-6
Author(s):  
Im Taek Yoon ◽  
Yoon Shon ◽  
Younghae Kwon ◽  
Young S. Park ◽  
Chang Soo Park ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Magnetic Phase ◽  
Structural Disorder ◽  
Magnetic Characteristics ◽  
Radio Frequency Plasma ◽  
Si Substrate ◽  
Ferromagnetic Property ◽  
Si Substrates ◽  
Annealing Step ◽  
Frequency Plasma

We have investigated the magnetic and optical properties of dislocation-free vertical GaN nanorods with diameters of 150 nm grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy followed by Mn ion implantation and annealing. The GaN nanorods are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV. For GaMnN nanorods, it can be concluded that the ferromagnetic property of GaMnN nanorod with a Curie temperature over 300 K is associated with the formation of Mn4Si7magnetic phase which results from the effects of magnetic and structural disorder introduced by a random incorporation and inhomogeneous distribution of Mn atoms in the porous layer between the nanorods that form precipitates in the Si substrate before or during the annealing step amongst the GaN nanorods.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Interface Formation and the Heteroepitaxy of ZnSe on Si.

1990 ◽  
Vol 198 ◽  
Author(s):  
R. D. Bringans ◽  
D. K. Biegelsen ◽  
F. A. Ponce ◽  
L.-E. Swartz ◽  
J. C. Tramontana
Keyword(s):  
Zinc Selenide ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Bulk Material ◽  
Znse Crystal ◽  
Si Substrate ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
Substrate Temperatures

ABSTRACTZinc selenide films have been grown heteroepitaxially on Si(100) substrates by molecular beam epitaxy. The growth has been carried out for raised substrate temperatures and also at room temperature followed by solid-phase epitaxial (SPE) regrowth. The ZnSe films have been characterized by a number of surface-sensitive techniques and both the interface and the bulk material have been examined with high resolution transmission electron microscopy (HRTEM). We find that an interlayer, which is most likely SiSex, is present between the ZnSe film and the Si substrate for growths made at 300 °C and causes loss of epitaxy. In the case of room temperature deposition and SPE, it is absent, leading to good epitaxy. In the latter situation, the films are very uniform and there is a 4° rotation of the ZnSe crystal axes relative to those of the Si substrate.

Periodic {001} Walls of Defects in Proton-Irradiated Cu and Ni

1986 ◽  
Vol 82 ◽  
Author(s):  
P. Ehrhart ◽  
W. Jäger ◽  
W. Schilling ◽  
F. Dworschak ◽  
Afaf A. Gadalla ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Average Concentration ◽  
Stacking Fault ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra

ABSTRACTThe evolution of the defect structure in 3 MeV-proton irradiated Cu and Ni has been investigated by transmission electron microscopy and by differential dilatometry. The proton irradiations were performed at T≦100°C up to irradiation doses of 2 dpa. An efficient loss of selfinterstitial atoms at dislocations and a consequently high average concentration of vacancies in clusters is observed starting from rather low fluences. In addition an ordering of the defects in the form of periodic {001} walls with a typical periodicity length of ≈ 60 nm is observed for all equivalent {001} planes. The walls consist of high local concentrations of dislocations, dislocation loops and stacking-fault tetrahedra. The observed formation of periodic arraysof defect walls is considered as an example for a possibly general microstructural phenomenon in metals under irradiation.

scholarly journals GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrea Ballabio ◽  
Sergio Bietti ◽  
Andrea Scaccabarozzi ◽  
Luca Esposito ◽  
Stefano Vichi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas Layer ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Phase Boundaries ◽  
High Optical Quality ◽  
Quantum Well Structures ◽  
Si Substrates

AbstractWe demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

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