Observation of Open-Ended Stacking Fault Tetrahedra in Si0.85Ge0.15 Grown on V-Grooved (001) Si and Planar (111) Si Substrates

1993 ◽  
Vol 319 ◽  
Author(s):  
David J. Howard ◽  
David C. Paine
Keyword(s):  
Chemical Vapor ◽  
Stacking Fault ◽  
Line Pattern ◽  
Plan View ◽  
Thermal Chemical Vapor Deposition ◽  
Si Substrates ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra ◽  
Planar Substrates ◽  
Tem Transmission Electron Microscopy

AbstractA new strain relief mechanism was observed in thin films of Si0.85Ge0.15 grown by RTCVD (rapid thermal chemical vapor deposition) on patterned (001) and planar (111) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [110] direction where the walls of the grooves were the {111} crystal planes lying in the [110] zone. Cross-section and plan-view TEM (transmission electron microscopy) studies revealed the presence of open ended stacking fault tetrahedra in strained-layer Si0.85Ge0.15 grown both on (111) Si wafers and the {111} sidewalls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on non-planar substrates.

Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
K.C. Hsieh ◽  
M.S. Feng ◽  
G.E. Stillman ◽  
C.R. Ito ◽  
D.G. McIntyre ◽  
...  
Keyword(s):  
Defect Density ◽  
Chemical Vapor ◽  
Asymmetric Distribution ◽  
Furnace Annealing ◽  
Double Crystal ◽  
Strain Anisotropy ◽  
Plan View ◽  
Defect Distribution ◽  
Si Substrates ◽  
Transmission Electron

Astract:A systematic study of the structural properties and defect distribution of GaAs layers grown by metalorganic chemical vapor deposition on Si substrates misoriented 1°, 1.5°, 2°, 4°, and 6° from [100] toward [011] is reported. Double crystal x-ray rocking curves, cross-section and plan-view Transmission Electron Microscopy (TEM) are used to characterize the structural strain and defect distribution of as-grown and annealed GaAs layers. Both strain and defect density in the GaAs layers are found to be dependent of the degree of substrate misorientation as well as the direction in which measurements are made. Plan-view TEM shows an asymmetric distribution of microtwins in two perpendicular directions. There exists a correlation between the directionality of the strain and of the defect density. Furnace annealing at 850°C for 30 minutes in an arsine overpressure can reduce significantly the defects, the strain and the strain anisotropy. It is found that microtwins are of the highest density when the substrate is misoriented about 4 degrees for the as-grown samples. Though a reduction of defects after annealing occurs for all samples, the least misoriented one shows the most improvement.

Stacking Fault Tetrahedra Formation During Growth of Si1-xGex Strained Layers on 〈111〉 Oriented Si Substrates: Tem Observations and Defect Modeling

1994 ◽  
Vol 356 ◽  
Author(s):  
David J. Howard ◽  
Allan F. Bower ◽  
David C. Paine
Keyword(s):  
Strain Energy ◽  
Stacking Fault ◽  
Dislocation Network ◽  
Dislocation Loops ◽  
Strained Layers ◽  
Plan View ◽  
Strained Layer ◽  
Si Substrates ◽  
Stacking Fault Tetrahedra ◽  
Stable Growth

AbstractWe report the observation of stacking fault tetrahedra (SFT) in strained Si1-xGex layers grown via rapid thermal CVD on (111) Si substrates. It is shown that these defects provide a mechanism for strain relief in films strained in compression due the presence of bounding edge-type stair rod partials whose Burgers vectors lie parallel to the strained layer interface. Cross section and plan view TEM were used to characterize this defect structure in epilayers (30 to 650nm thick) of Si1-xGex (0 < xGe < 0.27) grown on 〈111〉 oriented Si wafers. Stacking fault tetrahedra were observed only in alloys in the compositional range xGe ≥ 0.13 and only when growth proceeded on the 〈111〉 surface. A critical strain energy model that identifies conditions for the stable growth of stacking fault tetrahedra in a strained layer is presented. The model was based on conventional strain energy considerations where the energy of the stacking fault area plus the bounding dislocation network (including dislocation interactions but neglecting the free surface) was balanced against the strain energy released by the introduction of the defect. In addition, a formation mechanism consistent with these observations is described that involves the dissociation of Frank partial dislocation loops bounding stacking faults lying in the growth plane.

Formation Of Stacking Fault Tetrahedra During Epitaxial Growth of Silicon and Germanium-Silicon Layers on {111} Silicon Substrates

1985 ◽  
Vol 54 ◽  
Author(s):  
D. Brasen ◽  
S. Nakahara ◽  
J. C. Bean
Keyword(s):  
Molecular Beam ◽  
Stacking Fault ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra ◽  
Local Stresses ◽  
Silicon And Germanium ◽  
Germanium Silicon

ABSTRACTTransmission electron microscopy was used to characterize defects formed in silicon (Si) and germanium-silicon (Ge-Si) alloy layers grown sequentially by molecular-beam epitaxy (MBE) on {111} Si substrates. Stacking fault tetrahedra (SFT) were found to form in these epitaxial layers. In addition, the apex of the SFT are seen to be pointing down toward the Si substrate, with most of the SFT tips converging exactly at the Si/Si and the Ge-Si/Si interfaces. Diffraction contrast experiments using various two-beam conditions have shown that the stacking faults bounding the SFT are of intrinsic (vacancy) type. In the case of a Si layer on the Si substrate, it is reasoned that the SFT are caused by impurities on the surface of the Si substrate prior to deposition. However, in the Ge-Si layer, it is believed that the formation of the S FT is due to local stresses caused by the structural ordering/phase separation of the Ge atoms.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

1992 ◽  
Vol 263 ◽  
Author(s):  
Ting-Yen Chiang ◽  
En-Huery Liu ◽  
Der-Hwa Yiin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Solution Treatment ◽  
Plan View ◽  
Si Substrates ◽  
Gaas On Si ◽  
Transmission Electron

ABSTRACTThis paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

Periodic {001} Walls of Defects in Proton-Irradiated Cu and Ni

1986 ◽  
Vol 82 ◽  
Author(s):  
P. Ehrhart ◽  
W. Jäger ◽  
W. Schilling ◽  
F. Dworschak ◽  
Afaf A. Gadalla ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Average Concentration ◽  
Stacking Fault ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Stacking Fault Tetrahedra

ABSTRACTThe evolution of the defect structure in 3 MeV-proton irradiated Cu and Ni has been investigated by transmission electron microscopy and by differential dilatometry. The proton irradiations were performed at T≦100°C up to irradiation doses of 2 dpa. An efficient loss of selfinterstitial atoms at dislocations and a consequently high average concentration of vacancies in clusters is observed starting from rather low fluences. In addition an ordering of the defects in the form of periodic {001} walls with a typical periodicity length of ≈ 60 nm is observed for all equivalent {001} planes. The walls consist of high local concentrations of dislocations, dislocation loops and stacking-fault tetrahedra. The observed formation of periodic arraysof defect walls is considered as an example for a possibly general microstructural phenomenon in metals under irradiation.

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