Early Stages Of Reaction Between Amorphous Ni-Nb And Crystalline Au Films

1985 ◽  
Vol 54 ◽  
Author(s):  
E. A. Dobisz ◽  
H. G. Craighead ◽  
J. H. Perepezko ◽  
J. D. Wiley ◽  
B. L. Doyle ◽  
...  
Keyword(s):  
Thin Film ◽  
Cross Section ◽  
Ternary Compound ◽  
Growth Kinetics ◽  
Depth Resolution ◽  
Compound Layer ◽  
Rutherford Backscattering ◽  
Early Stages ◽  
Kinetics Of ◽  
High Depth

ABSTRACTThin film interactions between a-(Ni-Nb) and polycrystalline Au over-layers have been studied with high depth resolution (≤1.7nm) Rutherford backscattering (RBS) and TEM to obtain information on the early stages of reaction at the interface. The RBS spectra from Au indicated that the interdiffused samples consisted of two layers: an Au-Nb binary layer on the surface and a ternary Au-Ni-Nb compound layer beneath the binary layer. The growth kinetics of the ternary compound layer differed in samples which had been relaxed prior to Au deposition from the kinetics for unrelaxed samples. Furthermore, cross section TEM micrographs showed that relaxed and unrelaxed samples exhibit different microstructures after the early stages, of annealing. We interpret this result to indicate that the reaction stages in relaxed samples are not as advanced as those in the unrelaxed samples.

Reaction of Amorphous Minb Films with Crystalline Metal Overlayers

1984 ◽  
Vol 37 ◽  
Author(s):  
E. A. Dobisz ◽  
B. L. Doyle ◽  
J. H. Perepezko ◽  
J. D. Wiley ◽  
P. S. Peercy
Keyword(s):  
Metal Film ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Film ◽  
Depth Resolution ◽  
Rutherford Backscattering ◽  
Amorphous Films ◽  
The Stability ◽  
Metal Overlayers ◽  
Crystalline Metal ◽  
High Depth

AbstractIn many cases the stability of amorphous films is influenced by interaction with metallic crystalline overlayers. Such interactions between Au, Ni, Nb and Ta overlayers and a-(Ni-Nb) films are reported. During interdiffusion Au overlayers reacted with a-(Ni-Nb) to form two different adjacent crystalline layers. In order to study the influence of relaxation of the amorphous film on overlayer reaction several a-(Ni-Nb) samples were pre-annealed prior to Au deposition. High depth resolution Rutherford Backscattering Spectrometry (RBS) demonstrates that preannealing lowers the diffusion poefficient of Au in a-(Ni-Nb) at 4500C from 7.5×10−22 m2/s to 8.7×10−23 m22/s. During interdiffusion Ta was discovered to be substantially more inert than Au. For example, negligible interdiffusion between Ta and a-(Ni-Nb) at 505°C after 25 hours implies a diffusivity of less than 5×10−24 m2/s. These observations allow assessment of some of the requirements for increasing the stability of crystalline-amorphous metal film layered structures.

Thermal stability and growth kinetics of Co2Si and CoSi in thin‐film reactions

1982 ◽  
Vol 53 (6) ◽  
pp. 4406-4410 ◽  
Author(s):  
K. N. Tu ◽  
G. Ottaviani ◽  
R. D. Thompson ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Growth Kinetics ◽  
Kinetics Of

Morphological Effect on the Intermetallic Compound Layer Growth Kinetics of Metallurgical Joining

2020 ◽  
Vol 307 ◽  
pp. 26-30
Author(s):  
Azman Jalar ◽  
Maria Abu Bakar ◽  
Mohd. Zulhakimi Ab. Razak ◽  
Norliza Ismail
Keyword(s):  
Intermetallic Compound ◽  
Growth Kinetics ◽  
Intermetallic Layer ◽  
Compound Layer ◽  
Effect Of Temperature ◽  
Growth Exponent ◽  
Intermetallic Compound Layer ◽  
Growth Behaviour ◽  
Morphological Effect ◽  
Kinetics Of

Evaluating the growth kinetics is one of the most important characteristic in assessing the quality and reliability of metallurgical joining, especially in electronics packaging such as soldering and wire bonding technology. The growth kinetics is normally assessed using Arrhenius equation that involves diffusion activities due to thermally activated process. The well-known factors of thermal and time together with generally accepted growth exponent have been widely used for this assessment. The intermetallic compound layer which is the by-product of metallurgical reaction during soldering process has been exposed to high temperature to accelerate its growth. The cross-section of the joining was observed using optical microscope to quantify the layer of intermetallic compound. Morphological effect and shape factor of the layer have been analysed in complement with the effect of temperature and time on the growth behaviour. Directional growth and irregularities shape of the intermetallic layer show some inconsistency on the selection of growth exponent. The effect of initial size of intermetallic layer must also be considered in this assessment. This study suggests that the morphological effect must be analysed prior to the selection the growth exponent in assessing growth behaviour and kinetics of intermetallic layer in metallurgical joining.

X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

2010 ◽  
Vol 256 (23) ◽  
pp. 7178-7185 ◽  
Author(s):  
K. McLeod ◽  
S. Kumar ◽  
N.K. Dutta ◽  
R.St.C. Smart ◽  
N.H. Voelcker ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Kinetics ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
Film Coatings ◽  
Thin Film Coatings ◽  
Kinetics Of

Growth Kinetics of Thin-Film Cadmium Sulfide by Ammonia-Thiourea Based CBD

2004 ◽  
Vol 151 (10) ◽  
pp. C655 ◽  
Author(s):  
C. Voss ◽  
Y.-J. Chang ◽  
S. Subramanian ◽  
S. O. Ryu ◽  
T.-J. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Cadmium Sulfide ◽  
Growth Kinetics ◽  
Kinetics Of

Cd1-yZnyS-CuxS thin film solar cell with improved ternary compound layer

1982 ◽  
Vol 59 (1-2) ◽  
pp. 409-413 ◽  
Author(s):  
F. Zapien Nataren ◽  
B. Bouchikhi ◽  
S. Chandrasekhar ◽  
J.P. Crest ◽  
S. Martinuzzi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Ternary Compound ◽  
Thin Film Solar Cell ◽  
Compound Layer

The Kinetics of Ni-Al Spinel Growth Using Rutherford Backscattering Spectroscopy

1987 ◽  
Vol 94 ◽  
Author(s):  
Y. Kouh Simpson ◽  
E. G. Colgan ◽  
C. B. Carter
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Single Crystal ◽  
Reaction Rate Constant ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Complementary Techniques ◽  
Kinetics Of

ABSTRACTUsing a planar thin-film specimen geometry, the growth kinetics of the spinel in NiOAl2O3 system has been studied with Rutherford backscattering spectroscopy. A thin-layer of Ni film is deposited by the electron-beam deposition technique onto single-crystal alumina substrates of different orientations including, (0001), {1120}, {1102} and {1100}. The subsequent heat-treatment in air then converts the Ni to NiO, thus producing a uniform layer of NiO with good adhesion between the NiO and the alumina. The kinetics of the Ni-Al spinel growth has been found to be different for different single-crystal substrate orientations. The kinetics behavior follows a parabolic growth-rate law for each orientation but shows a different reaction-rate constant. X-ray diffraction and transmission electron microscopy have been used as complementary techniques to confirm the phases that form at each stage of the heat treatment and the corresponding microstructures of the thin-film layers respectively.

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