Amorphous W-Zr Films As Diffusion Barriers Between Al And Si

1985 ◽  
Vol 54 ◽  
Author(s):  
F. C. T. So ◽  
X.-A. Zhao ◽  
E. Kolawa ◽  
J. L. Tandon ◽  
M. F. Zhu ◽  
...  
Keyword(s):  
Diffusion Barriers ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Electrical Measurements ◽  
Line Layer ◽  
X Ray ◽  
High Crystallization ◽  
Deep Pits ◽  
Zr Alloy ◽  
Zr Alloys

ABSTRACTCosputtered W70Zr30 and W40Zr60 films are investigated as diffusion barriers between Al and Si. W-Zr alloys of both compositions were determined by x-ray diffraction to crystallize at 900°C on Al2O3 substrates. On <111>Si the W-Zr alloy reacts with the substrate above 700°C, forming a uniform, polycrystal line layer of W and Zr suicides. Despite the high crystallization temperatures, an Al overlayer interacts with W-Zr and the Si substrate at ∼500°C. MeV He backscattering spectrometry, SEM and EDAX indicate that this reaction is laterally nonuniform with the formation of deep pits penetrating into the Si substrate. We believe this to be a consequence of fractures in the W-Zr layer induced by reaction with Al. Electrical measurements on shallow junction diodes with <Si>/W-Zr/Al contacts show that the device junctions were thermally stable after a 30 min annealing at 450°C but were all shorted after heat treatments at 500°C or above.

Ohmic Contact to n-GaN with TiN Diffusion Barrier

1996 ◽  
Vol 449 ◽  
Author(s):  
E. Kamińska ◽  
A. Piotrowska ◽  
M. Guziewicz ◽  
S. Kasjaniuk ◽  
A. Barcz ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Diffusion Barriers ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Thermally Induced ◽  
X Ray ◽  
Tin Diffusion Barrier

ABSTRACTThe formation of n-GaN/Ti ohmic contacts with TiN diffusion barriers has been investigated by electrical measurements, x-ray diffraction and SIMS. It has been shown that the onset of the ohmic behaviour is associated with the thermally induced phase transformation of Ti into TiN at the GaN/Ti interface. It is suggested that the process is accompanied by an increase in the doping level in the semiconductor subcontact region. The presence of a TiN barrier is found to inhibit excessive decomposition of GaN and to confine the reaction between n-GaN and Ti.

Applications of Amorphous Ti-P-N Diffusion Barriers in Silicon Metallization

1990 ◽  
Vol 181 ◽  
Author(s):  
E. Kolawa ◽  
L. Halperin ◽  
P. Pokela ◽  
Quat T Vu ◽  
C. W. Nieh
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Diffusion Barriers ◽  
Rutherford Backscattering ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Alloy Films ◽  
X Ray

ABSTRACTThin films of amorphous TiP and TiPN2 alloys were deposited by sputtering of a TiP target in an Ar and N2/Ar mixture, respectively. These alloy films were tested as diffusion barriers between Al and Si as well as between Cu and Si and also in metallizations which included TiSi2 as the contacting layer. Rutherford backscattering spectrometry, x-ray diffraction and electrical measurements were used to determine the barrier effectiveness. We find that TiP and TiPN2 films prevent the interdiffusion and reaction between Al and Si up to 500°C and 600°C for 30 minutes annealing, respectively, and between Cu and Si up to 600°C and 700°C, respectively.

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Effect of Solution Treatment on Microstructures and Hardness of Mg-Gd-Y-Zr Alloy

2014 ◽  
Vol 937 ◽  
pp. 182-186
Author(s):  
Quan An Li ◽  
Lei Lei Chen ◽  
Wen Chuang Liu ◽  
Xing Yuan Zhang ◽  
Hui Zhen Jiang
Keyword(s):  
Vickers Hardness ◽  
Cast Alloy ◽  
Solution Treatment ◽  
Hardness Measurement ◽  
Solution Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solution Treated ◽  
Primary Particles ◽  
Zr Alloy

The influence of the solution treatment (at the temperature of 500-520°C for 4-12 h) on microstructures and mechanical properties of Mg-Gd-Y-Zr alloy was investigated by means of optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and Vickers hardness measurement. The as-cast alloy contains a microstructure consisting of α-Mg matrix, Mg5Gd phase and Mg24Y5phase. With increasing solution temperature and time, the quantity of the primary particles (Mg5Gd and Mg24Y5) in the alloy continually decreased, and the degree of recrystallization gradually increased, which result in the gradual decrease of the Vickers hardness of the solution-treated alloys.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

The Microstructure and Electrical Property of Porous Cu Film on Soft PVDF Substrate

2012 ◽  
Vol 472-475 ◽  
pp. 1451-1454
Author(s):  
Xue Hui Wang ◽  
Wu Tang ◽  
Ji Jun Yang
Keyword(s):  
Electrical Properties ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Cu Films ◽  
Cu Film ◽  
Diffraction Peaks ◽  
Sputtering Pressure ◽  
Effect Method

The porous Cu film was deposited on soft PVDF substrate by magnetron sputtering at different sputtering pressure. The microstructure and electrical properties of Cu films were investigated as a function of sputtering pressure by X-ray diffraction XRD and Hall effect method. The results show that the surface morphology of Cu film is porous, and the XRD revealed that there are Cu diffraction peaks with highly textured having a Cu-(220) or a mixture of Cu-(111) and Cu-(220) at sputtering pressure 0.5 Pa. The electrical properties are also severely influenced by sputtering pressure, the resistivity of the porous Cu film is much larger than that fabricated on Si substrate. Furthermore, the resistivity increases simultaneously with the increasing of Cu film surface aperture, but the resistivity of Cu film still decreases with the increasing grain size. It can be concluded that the crystal structure is still the most important factor for the porous Cu film resistivity.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Composition Analysis of Ge/Si1-xGex: C Buffer on Silicon Measured by Planar Scanning Energy Dispersive Spectroscopy

2011 ◽  
Vol 383-390 ◽  
pp. 7619-7623
Author(s):  
Z Z Lu ◽  
F. Yu ◽  
L. Yu ◽  
L. H. Cheng ◽  
P. Han
Keyword(s):  
Energy Dispersive Spectroscopy ◽  
Chemical Vapor ◽  
Energy Dispersive ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Composition Distribution ◽  
X Ray ◽  
Cvd Method ◽  
Substrate Structure

In this work, Si, Ge element composition distribution in Ge /Si1-xGex:C /Si substrate structure has been characterized and modified by planar scanning energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The Ge /Si1-xGex:C /Si substrate samples are grown by chemical vapor deposition (CVD) method. The accuracy of EDS value can be improved by ~ 32%. And the modified EDS results indicate the Ge distribution in the Ge/Si1-xGex:C/Si sub structure.

The Synthesis of Ce-Filled CoSb3 and Characterization of its Magnetic and Structural Properties

2003 ◽  
Vol 793 ◽  
Author(s):  
Arwyn L. E. Smalley ◽  
Brandon Howe ◽  
David C. Johnson
Keyword(s):  
Low Temperatures ◽  
Magnetic Measurements ◽  
Rietveld Analysis ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Ferromagnetic Component ◽  
Phase Pure ◽  
Powder Samples

ABSTRACTA series of cerium-containing CoSb3 samples were synthesized, with cerium quantities varying from 0 to 2 stoichiometric equivalents. These samples were annealed at low temperatures to crystallize the kinetically stable phases CexCo4Sb12 (x = 0–0.5). X-ray diffraction showed that these samples were phase pure, and Rietveld analysis on x-ray diffraction data from powder samples indicated that these samples were 25–88% crystalline. Electrical measurements showed that these samples are n-type, which was previously unknown in CexCo4Sb12. Magnetic measurements showed that the samples were paramagnetic due to the cerium being incorporated into the diamagnetic CoSb3 compound. In addition, they contained a ferromagnetic component that was attributed to the amorphous, cerium-containing phase.

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