Optical Analysis of Plasma Enhanced Crystallization of Amorphous Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
L. Montès ◽  
L. Tsybeskov ◽  
P. M. Fauchet ◽  
K. Pangal ◽  
J. C. Sturm ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Confinement ◽  
Silicon On Insulator ◽  
Optical Analysis ◽  
Grain Sizes ◽  
Mean Size ◽  
Low Temperature Crystallization ◽  
The Mean ◽  
Si Films ◽  
Temperature Crystallization

AbstractLow-temperature crystallization of a-Si is important for display and Silicon-On- Insulator (SOT) technologies. We present optical characterization (Raman scattering and photoluminescence) of H2 and O2 plasma enhanced crystallization of a-Si:H films. H2 plasma treatment is shown to be the most efficient, leading to larger grain sizes, and both H2 and O2 plasma lead to visible photoluminescence (PL). Recently, the PL of re-crystallized a-Si films has been explained in terms of quantum confinement [1]. The mean size of the crystallites in our re-crystallized films is determined by Raman scattering for different treatments parameters. No correlation between size and the photon energy of the visible emission is found. However, we can clearly distinguish between the PL from purely amorphous and re-crystallized a-Si:H films: Their PL temperature dependence and spectra are very different. The origin of the visible PL in re-crystallized thin Si films is discussed.

Enhanced Low-Temperature Crystallization of Amorphous Si Films Using AlCl3 Vapor

2001 ◽  
Vol 685 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Byung Tae Ahn
Keyword(s):  
Detection Limit ◽  
Low Temperature ◽  
Rough Surface ◽  
Direct Contact ◽  
Metal Film ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

AbstractIt is known that the direct contact between Al and a-Si enhances the crystallization of a-Si film. But the poly-Si films crystallized by the direct contact of Al metal film suffer the problems of rough surface and pores. In our study, we utilized the vapor from AlCl3 instead of Al metal film. The crystallization was enhanced by annealing a-Si films with AlCl3 that the crystallization was completed in 5h at 540. And the surface was as smooth as that of the a-Si film. The Al incorporation into the poly-Si film took place, but the content was below the detection limit of AES.

Study of low-temperature crystallization of amorphous Si films obtained using ferritin with Ni nanoparticles

2005 ◽  
Vol 86 (26) ◽  
pp. 262106 ◽  
Author(s):  
Hiroya Kirimura ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita
Keyword(s):  
Low Temperature ◽  
Ni Nanoparticles ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Dae Gyu Moon ◽  
Byung Tae Ahn
Keyword(s):  
Solid Phase ◽  
Copper Ions ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
New Process ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Fractal Size ◽  
Temperature Crystallization

AbstractLow-temperature crystallization of amorphous Si (a-Si) films was investigated by adsorbing copper ions on the surface of the films. The copper ions were adsorbed by spincoating of Cu solution. This new process lowered the crystallization temperature and reduced crystallization time of a-Si films. For 1000 ppm solution, the a-Si film was partly crystallized down to 500°C in 20 h and almost completely crystallized at 530°C in 20 h. The adsorbed Cu on the surface acted as a seed of crystalline and caused fractal growth. The fractal size was varied from 10 to 200 prm, depending on the Cu concentration in solution. But the grain size of the films was about 400 nm, which was similar to that of intrinsic films crystallized at 600°C.

Low-Temperature Crystallization of Amorphous Si Films Using Ferritin Protein with Ni Nanoparticles

2019 ◽  
Vol 3 (8) ◽  
pp. 195-201
Author(s):  
Y. Uraoka ◽  
Hiroya Kirimura ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
Ichiro Yamashita
Keyword(s):  
Low Temperature ◽  
Ni Nanoparticles ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization

STUDIES ON UV PHOTOLUMINESCENCE FROM PULSED LASER DEPOSITED ENSEMBLES OF CAPPED SILICON NANOPARTICLES

2011 ◽  
Vol 10 (01n02) ◽  
pp. 167-170 ◽  
Author(s):  
LALIT M. KUKREJA ◽  
AMITA CHATURVEDI ◽  
B. N. SINGH ◽  
A. P. DETTY ◽  
V. P. M. PILLAI ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanoparticles ◽  
Phonon Mode ◽  
Light Emission ◽  
Pulsed Laser ◽  
Interface State ◽  
Spectral Position ◽  
Phonon Replica ◽  
Mean Size ◽  
The Mean

Multilayer ensembles of alumina capped, widely dispersed silicon nanoparticles ( Si -nps) with mean diameter in the range of about 1–4 nm were grown using pulsed laser deposition. With photo-excitation at ~3.82 eV, photoluminescence (PL) was found to emanate from these Si -nps mainly in the UV spectral region centered at about 3.37 eV due to the Γ25–Γ15 transitions. It was found that while the bandgap measured from photoabsorption spectra showed blueshift with decreasing mean size of the Si -nps, spectral position of the PL peaks remained almost insensitive to variation in the mean size. The PL peak at about 3.37 eV was observed to vanish at temperatures higher than 70 K and another one at about 3.31 eV attributed to the TO phonon replica disappeared above 100 K. In general FWHM of both these PL peaks was found to increase monotonically from about 6 to 19 meV and the peak positions were found to undergo redshift with increase in the sample temperature from 10 to 100 K. These observations could be explained by applying Bose statistics for a 6 meV confined phonon mode broadening of the Si -nps and using the Varshni equation, respectively. Si -nps grown in oxygen ambient at 600°C showed significant enhancement in the PL intensity with increasing pressure. These findings elicit that light emission from Si -nps is either due to the nanoparticles of about 1 nm and smaller size primarily driven by the quantum confinement or due to an interface state pumped by these Si -nps.

scholarly journals A DEBATE ON THE SIMILARITY OF PARTICLE SIZING RESULTS DERIVED FROM THE ANALYSIS OF FINEGRAINED SEDIMENTS BY TWO DIFFERENT INSTRUMENTATIONS

2018 ◽  
Vol 40 (1) ◽  
pp. 64
Author(s):  
M. Iatrou ◽  
G. Papatheodorou ◽  
D. J.W. Piper ◽  
E. Tripsanas ◽  
G. Ferentinos
Keyword(s):  
Laser System ◽  
Particle Sizing ◽  
Corinth Gulf ◽  
Grain Sizes ◽  
Grab Sample ◽  
Basin Floor ◽  
Mean Size ◽  
The Mean ◽  
Analysis Of Variation ◽  
Individual Size

A set of grab-sample sediments collected from the basin floor of the Corinth Gulf, Greece, was analysed using two different techniques; LS 230 laser system and Coulter Counter TA II. The present study presents the results derived from the comparison between the two techniques. The correlation between the mean size and the sorting values obtained from the two methods is moderate. Also moderate are the correlations estimated for the fractions of clay and silt obtained from the two methods Furthermore the analysis showed that the Laser Coulter determines coarser grain sizes than the Coulter. The analysis of variation/residuals within individual size intervals showed a higher variability of residuals for the coarser fractions (7-6 and 5-4 phi).

Low-temperature crystallization of amorphous Si films using AlCl3 vapor

2002 ◽  
Vol 74 (1-4) ◽  
pp. 315-321 ◽  
Author(s):  
Jin Hyung Ahn ◽  
Ji Hye Eom ◽  
Kyung Hoon Yoon ◽  
Byung Tae Ahn
Keyword(s):  
Low Temperature ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Temperature Crystallization
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