Preparation and Characterization of Microcrystalline and Epitactially Grown Emitter Layers for Silicon Solar Cells

1998 ◽  
Vol 536 ◽  
Author(s):  
K. Lips ◽  
J. Platen ◽  
S. Brehme ◽  
S. Gall ◽  
I. Sieber ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gas Phase ◽  
Quartz Glass ◽  
Carrier Mobility ◽  
Doping Concentration ◽  
Electron Cyclotron Resonance ◽  
Glass Substrates ◽  
B Doping

AbstractWe have deposited thin B- and P-doped Si layers by electron cyclotron resonance CVD on c- Si (4 Ωcm, CZ) and on quartz glass substrates at T=325°C. Films grown on quartz glass are of microcrystalline nature with crystalline volume fractions of about 70 % and a resistivity ranging from 0.01 - 10 (Ωcm)−1 depending on doping concentration. The doping efficiency is close to unity with the carrier mobility being independent of doping concentration for both B- and Pdoping. Films grown on c-Si, on the other hand, exhibit perfect homoepitaxial morphology when the gas phase doping concentration exceeds 1000 ppm and 5000 ppm for P- and B-doping, respectively. The quality of the films is tested by preparing thin film emitter solar cells. We find efficiencies above 11 % for cells without ARC. The result are compared to cells with diffused emitters, otherwise prepared with the same technological steps.

Effect Of μ-Doped Compensated Material on Stability of a-Si:H Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
F. Palma ◽  
M. Tucci
Keyword(s):  
Solar Cells ◽  
Doping Concentration ◽  
Dark Conductivity ◽  
Degradation Behavior ◽  
Simultaneous Presence ◽  
Deposition Parameters ◽  
In Doping ◽  
The Difference

AbstractIn this paper we focus our attention on compensated materials with μ-doping concentration in order to obtain a stable intrinsic layer with initial high photoconductivity suitable for p-i-n solar cells. Films were grown from a mixture of undiluted silane, hydrogen diluted phosphine and hydrogen diluted diborane. Values of dark conductivity around 10-11 Ω-1cm-1 and photosensitivity ratio under AM 1.5 of 6 orders of magnitude have been obtained for phosphine/diborane ratio around 102. The difference between the two dopant concentrations is in agreement with the difference in doping efficiency of the two gases found in the characterization of single μ-doped films.We compared the degradation behavior of compensated and intrinsic materials with the same initial dark and light conductivity. After about 20 h the photoconductivity of the compensated and the intrinsic material decreased of 33% and 70%, respectively. The space of investigable deposition parameters has been limited by the stress induced by the simultaneous presence of phosphine and diborane which leads to a macroscopic, periodic and regular damage of the film.

scholarly journals n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1699
Author(s):  
Dipendra Adhikari ◽  
Maxwell M. Junda ◽  
Corey R. Grice ◽  
Sylvain X. Marsillac ◽  
Robert W. Collins ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor ◽  
Soda Lime ◽  
Device Fabrication ◽  
Silicon Solar Cells ◽  
Soda Lime Glass ◽  
Hydrogenated Silicon ◽  
Glass Substrates ◽  
Collection Probability

Nanocrystalline hydrogenated silicon (nc-Si:H) substrate configuration n-i-p solar cells have been fabricated on soda lime glass substrates with active absorber layers prepared by plasma enhanced chemical vapor deposition (PECVD) and radio frequency magnetron sputtering. The cells with nanocrystalline PECVD absorbers and an untextured back reflector serve as a baseline for comparison and have power conversion efficiency near 6%. By comparison, cells with sputtered absorbers achieved efficiencies of about 1%. Simulations of external quantum efficiency (EQE) are compared to experimental EQE to determine a carrier collection probability gradient with depth for the device with the sputtered i-layer absorber. This incomplete collection of carriers generated in the absorber is most pronounced in material near the n/i interface and is attributed to breaking vacuum between deposition of layers for the sputtered absorbers, possible low electronic quality of the nc-Si:H sputtered absorber, and damage at the n/i interface by over-deposition of the sputtered i-layer during device fabrication.

MBE Growth and Optical Characterization of InGaN/AlGaN Multiquantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
R. Singh ◽  
W.D. Herzog ◽  
D. Doppalapudi ◽  
M.S. ÜnlÜ ◽  
B.B. Goldberg ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electron Cyclotron Resonance ◽  
Temperature Cycling ◽  
Cross Sectional ◽  
Luminescence Microscopy ◽  
Mbe Growth ◽  
Transmission Electron ◽  
Ingan Quantum Wells

ABSTRACTWe report the growth of InGaN/AIGaN MQWs on c-plane sapphire by electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE). Two types of structures were investigated; one employing a GaN and the other a A1GaN barrier layer. The first structure consists of five periods of 80 Å thick In0.09Ga0.91N wells separated by 90 Å thick GaN barriers. The second structure consists of|seven periods of 120 Å thick In0.35Ga0.65N wells and Al0.1Ga0.9N barriers. The substrate temperature was kept constant during the growth of both the wells and the barriers, thus avoiding the need for any temperature cycling during the growth, which may lead to interfacial contamination. The films were characterized by cross sectional transmission electron microscopy (TEM), room temperature photoluminescence (PL) and sub-micron resolution luminescence microscopy. TEM images show sharp and abrupt interfaces, thus confirming the high interfacial quality of the MQW structures. Both structures exhibit strong RT luminescence emission peaking at 387 nm (FWHM = 16nm) for the In0.09Ga0.91N/GaN structure and at 463 nm (FWHM = 28nm) for the In0.35Ga0.65N/A10.1Ga0 9N structure. The high resolution luminescence microscopy studies reveal that the radiative recombination for the InGaN quantum wells is 60–70 times more efficient than for the underlying GaN film.

scholarly journals PREPARATION AND CHARACTERIZATION OF P3HT-PCBM ORGANIC SOLAR CELLS

2013 ◽  
pp. 23-25
Author(s):  
ANUBHAV GUPTA ◽  
PRAVEEN S ◽  
ABHISHEK KUMAR ◽  
PRIYANKA SHREE ◽  
SUCHANA MISHRA
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Active Layer ◽  
Organic Solar Cells ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Glass Substrates

Organic solar cells using P3HT: PCBM as an active layer on ITO coated glass substrates were fabricated and characterized. Different air annealing procedures and cathode materials were tried and the characteristics were compared with that of a standard thin film polycrystalline silicon solar cell. It was found that the sample prepared with post-deposition air annealing at 130 oC improves the open circuit voltage (Voc) considerably. Besides, short circuit current (Isc) and the efficiency (η) were highest for the sample with a non annealed active layer. Series resistance (Rs) for this sample was lowest, but 103 times higher than that of the silicon solar cell, which in turn may have reduced the efficiency value for the organic cell compared to silicon.

Preparation and Characterization of Thin CIGSS Solar Cells on Mo Coated Glass Substrates

Solar Energy ◽  
2005 ◽  
Author(s):  
Anant H. Jahagirdar ◽  
Ankur A. Kadam ◽  
Neelkanth G. Dhere
Keyword(s):  
Solar Cells ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Sulfur Source ◽  
Coated Glass Substrate ◽  
Solar Cell Performance ◽  
Coated Glass ◽  
Glass Substrates ◽  
Evaporation Technique

The aim of this study is to review issues related to the requirement of thin CIGSS absorber layers, prepare and characterize thin CIGSS films on molybdenum coated glass, improve understanding of material properties, and further enhance solar cell performance. This paper presents the preparation and properties of thin (∼1 μm thick) CuIn1−xGaxSe2−ySy (CIGSS) solar cells on molybdenum coated glass substrate. CIGSS films of thickness ∼1 μm were prepared in two steps. Step one involved the deposition of Cu-In-Ga metallic precursors on molybdenum coated glass substrate and step two involves the selenization/sulfurization of these metallic precursors using diluted diethylselenide (DESe) as selenium source and diluted H2S as sulfur source respectively. Thin film solar cells were completed by the deposition of n-type CdS layer by chemical bath deposition, ZnO/ZnO:Al transparent conducting window bilayer by RF magnetron sputtering and Ni-Al front contact fingers by e-beam evaporation technique through a metal mask. This paper presents the preliminary results obtained on very thin (∼ 1 μm) absorber layer.

Characterization of effective charge carrier mobility in ZnPc/C60 solar cells after ageing

2009 ◽  
Vol 6 (12) ◽  
pp. 2864-2866 ◽  
Author(s):  
Vaidotas KazÌŒukauskas ◽  
Andrius Arlauskas ◽  
Mindaugas Pranaitis ◽  
Rudolf Lessmann ◽  
Moritz Riede ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Effective Charge ◽  
Carrier Mobility ◽  
Charge Carrier Mobility

Recent Improvements in Dry Etching of Hg1−xCdxTe By Ch4 Based Electron Cyclotron Resonance Plasmas

1997 ◽  
Vol 487 ◽  
Author(s):  
M. Seelmann-Eggebert ◽  
A. Rar ◽  
H. Zimmermann ◽  
P. Meisen
Keyword(s):  
Surface Morphology ◽  
Gas Phase ◽  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Electrical Characterization ◽  
Reaction Scheme ◽  
Etching Process ◽  
Consistent Manner

AbstractSignificant improvements of a previously reported etching process [1] for Hg1−xCdxTe have been achieved with respect to etch rate, surface morphology and surface stoichiometry by optimization of the process parameters. The gas phase and surface reactions driving the etching process have been analyzed by combined optical and electrical characterization of the plasma and surface analyses of the samples. A reaction scheme is suggested which allows to model and upscale the process in a consistent manner.

Characterization of thin-film a-Si:H/µc-Si:H tandem solar cells on glass substrates

2013 ◽  
Vol 48 (5) ◽  
pp. 279-286 ◽  
Author(s):  
A. Klossek ◽  
C. Krause ◽  
T. Arguirov ◽  
H.-M. Krause ◽  
W. Seifert ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Tandem Solar Cells ◽  
Glass Substrates

scholarly journals The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-6
Author(s):  
Youngseok Lee ◽  
Vinh Ai Dao ◽  
Sangho Kim ◽  
Sunbo Kim ◽  
Hyeongsik Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gas Phase ◽  
Light Absorption ◽  
Doping Concentration ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Localized States ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
Cell Efficiency

For optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si) heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption have to be compromised themselves. For this purpose, the effect of both doping concentration and thickness of emitter layer was investigated. It was found that with gas phase doping concentration and emitter layer thickness of 3% and 7 nm, solar cell efficiency in excess of 14.6% can be achieved. For high gas phase doping concentration, the degradation of open-circuit voltage as well as cell efficiency was obtained due to the higher disorder in the emitter layer. The heavily doped along with thicker in thickness of emitter layer results in light absorption on short wavelength, then diminishing short-circuit current density.

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