Effect Of μ-Doped Compensated Material on Stability of a-Si:H Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
F. Palma ◽  
M. Tucci
Keyword(s):  
Solar Cells ◽  
Doping Concentration ◽  
Dark Conductivity ◽  
Degradation Behavior ◽  
Simultaneous Presence ◽  
Deposition Parameters ◽  
In Doping ◽  
The Difference

AbstractIn this paper we focus our attention on compensated materials with μ-doping concentration in order to obtain a stable intrinsic layer with initial high photoconductivity suitable for p-i-n solar cells. Films were grown from a mixture of undiluted silane, hydrogen diluted phosphine and hydrogen diluted diborane. Values of dark conductivity around 10-11 Ω-1cm-1 and photosensitivity ratio under AM 1.5 of 6 orders of magnitude have been obtained for phosphine/diborane ratio around 102. The difference between the two dopant concentrations is in agreement with the difference in doping efficiency of the two gases found in the characterization of single μ-doped films.We compared the degradation behavior of compensated and intrinsic materials with the same initial dark and light conductivity. After about 20 h the photoconductivity of the compensated and the intrinsic material decreased of 33% and 70%, respectively. The space of investigable deposition parameters has been limited by the stress induced by the simultaneous presence of phosphine and diborane which leads to a macroscopic, periodic and regular damage of the film.

Characterization of radiation tolerance in doping superlattice solar cells

2013 ◽  
Author(s):  
Michael A. Slocum ◽  
David V. Forbes ◽  
Mihir H. Bohra ◽  
Seth M. Hubbard
Keyword(s):  
Solar Cells ◽  
Radiation Tolerance ◽  
In Doping

Characterization of Amorphous Silicon Thin Films Deposited on Upilex-s Polyimide Substrates for Application in Flexible Solar Cells

2009 ◽  
Vol 87-88 ◽  
pp. 416-421 ◽  
Author(s):  
Ying Ge Li ◽  
Dong Xing Du
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Flexible Electronics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Conductivity Measurements ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Upilex-s [poly(biphenyl dianhydride-p-phenylene diamine)] polyimide have been widely employed in the area of flexible electronics. For its potential application on fabricating flexible solar cells, the optical properties of Upilex-s are measured in this paper. Intrinsic hydrogenated amorphous silicon layers are then deposited on Upilex-s substrates at temperatures 100°C and 180°C by plasma enhanced chemical vapor deposition (PECVD) system. As an comparison, intrinsic a-Si:H layers are also fabricated on glass substrate of Corning2000. Both layers on flexible and rigid substrates are thoroughly characterized by activation energy and dark conductivity measurements. It can be concluded that the intrinsic layer on Upilex-s has favorable properties and could be a competitive candidate as substrate materials of flexible solar cells.

Preparation and Characterization of Microcrystalline and Epitactially Grown Emitter Layers for Silicon Solar Cells

1998 ◽  
Vol 536 ◽  
Author(s):  
K. Lips ◽  
J. Platen ◽  
S. Brehme ◽  
S. Gall ◽  
I. Sieber ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gas Phase ◽  
Quartz Glass ◽  
Carrier Mobility ◽  
Doping Concentration ◽  
Electron Cyclotron Resonance ◽  
Glass Substrates ◽  
B Doping

AbstractWe have deposited thin B- and P-doped Si layers by electron cyclotron resonance CVD on c- Si (4 Ωcm, CZ) and on quartz glass substrates at T=325°C. Films grown on quartz glass are of microcrystalline nature with crystalline volume fractions of about 70 % and a resistivity ranging from 0.01 - 10 (Ωcm)−1 depending on doping concentration. The doping efficiency is close to unity with the carrier mobility being independent of doping concentration for both B- and Pdoping. Films grown on c-Si, on the other hand, exhibit perfect homoepitaxial morphology when the gas phase doping concentration exceeds 1000 ppm and 5000 ppm for P- and B-doping, respectively. The quality of the films is tested by preparing thin film emitter solar cells. We find efficiencies above 11 % for cells without ARC. The result are compared to cells with diffused emitters, otherwise prepared with the same technological steps.

scholarly journals Characterization of Potential-Induced Degradation and Recovery in CIGS Solar Cells

Energies ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4628
Author(s):  
Solhee Lee ◽  
Soohyun Bae ◽  
Se Jin Park ◽  
Jihye Gwak ◽  
JaeHo Yun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Alternative Energy ◽  
Doping Concentration ◽  
High Efficiency ◽  
Cell Level ◽  
Alternative Energy Sources ◽  
Cigs Thin Film ◽  
Current Voltage ◽  
Cigs Solar Cells

The potential-induced degradation (PID) mechanism in Cu(In,Ga)(Se,S)2 (CIGS) thin-film solar cells, which are alternative energy sources with a high efficiency (>23%) and upscaling possibilities, remains unclear. Therefore, the cause of PID in CIGS solar cells was investigated in this study at the cell level. First, an appropriate PID experiment structure at the cell level was determined. Subsequently, PID and recovery tests were conducted to confirm the PID phenomenon. Light current–voltage (I–V), dark I–V, and external quantum efficiency (EQE) analyses were conducted to determine changes in the cell characteristics. In addition, capacitance–voltage (C–V) measurements were carried out to determine the doping concentration and width of the space charge region (SCR). Based on the results, the causes of PID and recovery of CIGS solar cells were explored, and it was found that PID occurs due to changes in the bulk doping concentration and built-in potential at the junction. Furthermore, by distinguishing the effects of temperature and voltage, it was found that PID phenomena occurred when potential difference was involved.

Optimization of minute doping of Y1−xRExBa2Cu3O7−δ thin films with RE = Tb and Nd

2010 ◽  
Vol 1254 ◽  
Author(s):  
J.N. Reichart ◽  
E.L. Thomas ◽  
T.J. Haugan ◽  
X. Song ◽  
B. M. Ruter-Schoppman ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Flux Pinning ◽  
Doping Concentration ◽  
Effective Means ◽  
Ybco Films ◽  
Deposition Parameters ◽  
Optimal Doping Concentration ◽  
The Difference ◽  
Re Elements

AbstractDoping of YBa2Cu3O7−δ (YBCO) has become an effective means of increasing the flux pinning and critical current densities (Jc) in thin film superconductors, while maintaining the transition temperature (Tc). In previous research efforts, our group showed that doping (Y1−xREx)BCO with typically deleterious rare earth (RE) elements can be used to improve the fil's current density via flux pinning when the x molar additions are less than 1%. However, data was only presented for different orders of magnitude (x = 0.1%, 1.0%, 10%) without consideration of optimization. The research presented here demonstrates that the deleterious RE elements can differ greatly in how broad the range of optimal doping concentration is, in addition to the relative doping concentration. Rare-earth elements Nd and Tb were compared due to the difference in degradation mechanisms: Nd additions results in Ba site substitution and Tb123 exhibits poor phase formation. Thin films of Nd and Tb doped YBCO films were grown by pulsed laser deposition (PLD) using standard deposition parameters for plain YBCO. The compositions studied were (Y1−xREx)BCO where x was varied from 0.0001 to 0.025 for Nd and 0.005 to 0.015 for Tb. Targets for PLD were prepared using solid state reaction and sintering procedures. All films were characterized for Jc and Tc by vibrating sample magnetometry. Data for Jc(H,T) and Tc were compared to undoped YBCO films processed under the same conditions. The results show a measurable increase in flux pinning for both different concentrations and range of Nd and Tb doping, with little decrease in Tc.

Analisis Karakterisasi Teknologi Direct Sequence Spread Spectrum Dan Frequency Hopping Spread Spectrum

2019 ◽  
Vol 2 (2) ◽  
pp. 129-138
Author(s):  
Fawzan Galib Abdul Karim Bawahab ◽  
Elvan Yuniarti ◽  
Edi Kurniawan
Keyword(s):  
Spread Spectrum ◽  
Communication Systems ◽  
Multiple Access ◽  
Frequency Hopping ◽  
Direct Sequence Spread Spectrum ◽  
Direct Sequence ◽  
Frequency Hopping Spread Spectrum ◽  
Two Systems ◽  
The Difference

Abstrak. Pada penelitian ini, telah dilakukan analisa karakterisasi pada teknologi Direct Sequence Spread Spectrum dan Frequency Hopping Spread Spectrum, sebagai salah satu teknik multiple-access pada sistem komunikasi. Karakterisasi dilakukan untuk mencari bagaimana cara meningkatkan keoptimalan kedua sistem tersebut, dalam mengatasi masalah interferensi dengan sistem dan channel yang sama. Dan juga untuk menentukan veriabel apa yang mempengaruhi keoptimalan kedua sistem tersebut. Karakterisasi dilakukan dengan menentukan variabel-variabel yang mempengaruhi keoptimalan keduanya. Hasil dari karakterisasi, diketahui variabel-variabel yang mempengaruhi kemampuan sistem DSSS yaitu nilai frekuensi spreading (). Sedangkan untuk sistem FHSS yaitu nilai frekuensi spreading ( dan ) dan selisih antara frekuensi hopping data dengan frekuensi hopping interferensi . Kata Kunci: BER, DSSS, FHSS, Interference, Spread spectrum. Abstract. In this study, characterization of Direct Sequence Spread Spectrum and Frequency Hopping Spread Spectrum technologies have been done, as one of the multiple-access techniques in communication systems. Characterization is done to find out how to improve the ability of the two systems, in solving interference problems with the same system and channel. And also to determine what veriabel affects the ability of the two systems. Characterization is done by determining the variables that affect the ability of both. The results of the characterization, known variables that affect the ability of the DSSS system are the spreading frequency value (). As for the FHSS system, the spreading frequency value ( and ) and the difference between frequency hopping data with frequency hopping interference .

Characterization of the surface of hydrodesulphurization catalysts by adsorption of hydrocarbons

1984 ◽  
Vol 49 (2) ◽  
pp. 410-420
Author(s):  
Eva Hillerová ◽  
Miroslav Zdražil
Keyword(s):  
Hydrogen Sulphide ◽  
Chromatographic Method ◽  
Supported Catalysts ◽  
Alumina Surface ◽  
Reversible Adsorption ◽  
The Difference

Reversible adsorption of heptane and benzene on model and industrial hydrodesulphurization molybdena catalysts has been studied by elution chromatographic method at 150 °C. An increase in the adsorption of heptane on sulphidation of adsorbents was small for Al2O3 and great for MoO3. Supported catalysts behaved as mixture of Al2O3 and MoO3.The portion of surface which can be transformed by sulphidation into MoS2 ranged from 0 to 65% for individual commercial catalysts, as determined from the change in heptane adsorption after sulphidation of a given sample. The polarity of catalysts, including their acidity, was estimated from the difference between adsorption of benzene and heptane. The polarity of model and industrial catalysts in oxidic form was similar to that of alumina in most cases. The decrease in the polarity after sulphidation of the adsorbents was small for Al2O3 and great for MoO3. The decrease in polarity resulting from sulphidation of supported catalysts was relatively small, since the reaction of MoO3 monolayer with hydrogen sulphide leads to partial reformation of the alumina surface. The acidity of supported sulphided hydrodesulphurization catalysts has been shown by this method to be comparable with the acidity of the support itself.

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