Photoluminescence from Single Porous Silicon Chromophores

1998 ◽  
Vol 536 ◽  
Author(s):  
M. D. Mason ◽  
G. M. Credo ◽  
K. D. Weston ◽  
S. K. Buratto
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Porous Si ◽  
Vibronic Structure ◽  
Passivating Layer ◽  
Si Nanoparticles ◽  
Si Nanocrystal ◽  
Quantum Confined

AbstractWe spatially isolate and detect the luminescence from individual porous Si nanoparticles at room temperature. Our experiments show a variety of phenomena not previously observed in the emission from porous Si including a distribution of emission wavelengths, resolved vibronic structure, random spectral wandering, luminescence intermittency and irreversible photobleaching. Our results indicate that the emission from porous Si nanoparticles originates from excitons in quantum confined Si, strongly influenced by the surface passivating layer of the Si nanocrystal.

Fast Photoluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
D. I. Kovalev ◽  
F. Koch ◽  
V. Lehmann
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Spectral Range ◽  
Luminescence Band ◽  
Room Temperature ◽  
Internal Surface ◽  
Porous Si ◽  
Time Resolved ◽  
Processed Material ◽  
Defect Luminescence

ABSTRACTTime-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

Er-Implanted Porous Silicon: a Novel Material for Si-Based Infrared LEDs

1994 ◽  
Vol 358 ◽  
Author(s):  
Fereydoon Namavar ◽  
F. Lu ◽  
C.H. Perry ◽  
A. Cremins ◽  
N.M. Kalkhoran ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Wide Bandgap ◽  
Device Fabrication ◽  
Porous Si ◽  
High Concentration ◽  
Light Emitting ◽  
Novel Material ◽  
Bandgap Semiconductors ◽  
Ir Emission

ABSTRACTWe have demonstrated a strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650°C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In0.53Ga0.47As material which is used for commercial IR light-emitting diodes (LEDs).The strong IR emission (much higher than Er in quartz) and the weak temperature dependency of Er in porous Si, which is similar to Er3+ in wide-bandgap semiconductors, suggests that Er is not in SiO2 or Si with bulk properties but, may be confined in Si light-emitting nanostructures. Porous Si is a good substrate for rare earth elements because: 1) a high concentration of optically active Er3+ can be obtained by implanting at about 200 keV, 2) porous Si and bulk Si are transparent to 1.54 μm emission therefore, device fabrication is simplified, and 3) although the external quantum efficiency of visible light from porous Si is compromised because of self-absorption, it can be used to pump Er3+.

Optical Properties of Deuterium Terminated Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
Takahiro Matsumoto ◽  
Yasuaki Masumoto ◽  
Nobuyoshi Koshida
Keyword(s):  
Optical Properties ◽  
Absorption Spectrum ◽  
Porous Silicon ◽  
Photoluminescence Spectrum ◽  
Porous Si ◽  
Surface Vibration ◽  
Quantum Confined

AbstractWe have studied the optical properties of deuterium-terminated porous silicon. The photoluminescence spectrum was different from that of usual hydrogen-terminated porous Si despite porous Si showing both the same structure and the same absorption spectrum. These results indicate that the surface vibration of terminated atoms couples to the quantum confined states.

CO2 to methanol conversion using hydride terminated porous silicon nanoparticles

2017 ◽  
Vol 53 (21) ◽  
pp. 3114-3117 ◽  
Author(s):  
M. Dasog ◽  
S. Kraus ◽  
R. Sinelnikov ◽  
J. G. C. Veinot ◽  
B. Rieger
Keyword(s):  
Porous Silicon ◽  
Silicon Nanoparticles ◽  
Methanol Conversion ◽  
Porous Si ◽  
Si Nanoparticles ◽  
Porous Silicon Nanoparticles

Reduction of CO2 to methanol using hydride terminated porous Si nanoparticles.

Unimportance of Siloxene in Luminescent Porous Silicon as Determined by Nexafs & Exafs

1993 ◽  
Vol 298 ◽  
Author(s):  
S.L. Friedman ◽  
M.A. Marcus ◽  
D.L. Adler ◽  
Y.-H. Xie ◽  
T.D. Harris ◽  
...  
Keyword(s):  
Fine Structure ◽  
Porous Silicon ◽  
Room Temperature ◽  
Emission Spectra ◽  
Porous Si ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
Room Temperature Luminescence ◽  
Combined Data

AbstractNear-edge-- and extended--x-ray absorption fine structure measurements, as well as luminescence excitation and emission spectra, were obtained from samples of porous Si and siloxene. Contrary to a recently proposed explanation for the room temperature luminescence in porous Si, the combined data indicate that siloxene is not principally responsible for the observed effect.

Photoluminescence Properties of Er-Doped Porous Silicon

1995 ◽  
Vol 405 ◽  
Author(s):  
U. Hömmerich ◽  
X. Wu ◽  
F. Namavar ◽  
A. M. Cremins-Costa ◽  
K. L. Bray
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Power Dependence ◽  
Photoluminescence Properties ◽  
Porous Si ◽  
Temperature Quenching ◽  
Photoluminescence Study ◽  
Visible Luminescence ◽  
Excitation Mechanisms ◽  
Er Doped

AbstractWe present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650°C for 30 minutes. Room-temperature 1.54μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

Si Nanocrystal Memory Cell with Room-Temperature Single Electron Effects

2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Single Electron ◽  
Si Nanocrystal ◽  
Nanocrystal Memory ◽  
Electron Effects

Observation of quantum-confined luminescence in partially oxidized porous silicon

2000 ◽  
Vol 80 (4) ◽  
pp. 679-689 ◽  
Author(s):  
Giampiero Amato ◽  
L. Boarino ◽  
D. Midellino ◽  
A. M. Rossi
Keyword(s):  
Porous Silicon ◽  
Oxidized Porous Silicon ◽  
Quantum Confined

Room-temperature electroluminescence from erbium-doped porous silicon

1999 ◽  
Vol 75 (25) ◽  
pp. 3989-3991 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped

Enhancement of efficiency in graphene/porous silicon solar cells by co-doping graphene with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide

2017 ◽  
Vol 5 (35) ◽  
pp. 9005-9011 ◽  
Author(s):  
Ju Hwan Kim ◽  
Dong Hee Shin ◽  
Ha Seung Lee ◽  
Chan Wook Jang ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Solar Cells ◽  
Porous Silicon ◽  
Au Nanoparticles ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Co Doping ◽  
Si Solar Cells ◽  
First Time

The co-doping of graphene with Au nanoparticles and bis(trifluoromethanesulfonyl)-amide is employed for the first time to enhance the performance of graphene/porous Si solar cells.

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